ASDM100DN35Q-R

ASDM100DN35Q 100V Dual N-Channel MOSFET Features ● Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 150 °C operating temperature ● Pb-free lead plating ● ● Product Summary VDS $SSOLFDWLRQV ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100 V RDS(on),max.@VGS=10V 17 mΩ ID 35 A Dual N-Channel DFN5*6-8 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 35 A ID (100℃) 24.8 A Pulsed Drain Current IDM 140 A Maximum Power Dissipation PD 50 W 0.4 W/℃ EAS 200 mJ TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Case RθJC 2.5 ℃/W Thermal Resistance,Junction-to-Ambient RθJA 62 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic NOV 2021 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM100DN35Q 100V Dual N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS,ID=250μA 1.0 1.9 2.5 V VGS=10V, ID=20A - 16.5 17 mΩ VGS=4.5V, ID=20A - 20 21 mΩ VDS=5V,ID=20A - 35 - S - 1080 - PF - 94 - PF - 7.4 - PF - 6 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=50V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=50V,ID=20A - 2 - nS td(off) VGS=10V,RG=1.6Ω - 18 - nS - 2 - nS - 26 - nC - 7.4 nC - 3.8 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=50V,ID=20A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current VSD (Note 2) VGS=0V,IS=35A IS Reverse Recovery Time trr Reverse Recovery Charge Qrr - 1.2 V 35 A - 26 nS - 98 nC TJ = 25°C, IF = 20A di/dt = 500A/μs (Note3) - Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=20V,VG=10V,L=0.5mH,Rg=25Ω NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM100DN35Q 100V Dual N-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Performance Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Figure 2 Transfer Characteristics ID- Drain Current (A) Figure 3 Rdson- Drain Current NOV 2021 Version1.0 3/7 Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM100DN35Q Capacitance (pF) Power Dissipation (W) 100V Dual N-Channel MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM100DN35Q 100V Dual N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100DN35Q-R 100DN35 DFN5*6-8 Tape&Reel 4000/Reel PACKAGE MARKING 100DN35 DFN5*6-8 NOV 2021 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM100DN35Q 100V Dual N-Channel MOSFET Dual DFN5x6-8 Package Outline Data DIMENSIONS ( unit : mm ) Symbol Notes: Min Typ Max A 0.9 1 1.1 b 0.33 0.41 0.51 protrusions or gate burrs. C 0.2 0.25 0.3 3. Dimensions "D1" and "E1" include interterminal flash or D1 4.8 4.9 5 protrusion. Interterminal flash or protrusion shall not exceed D2 3.61 3.81 3.96 E 5.9 6 6.1 E1 5.7 5.75 5.8 E2 3.38 3.58 3.78 1. Refer to JEDEC MO-240 variation AA. 2. Dimensions "D1" and "E1" do NOT include mold flash 0.25mm per side. 1.27 BSC e H 0.41 0.51 0.61 K 1.1 -- -- L 0.51 0.61 0.71 L1 0.06 0.13 0.2 M 0.5 -- -- α 0° -- 12° NOV 2021 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM100DN35Q 100V Dual N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 7/7 www.ascendsemi.com 0755-86970486