ASDM100N15KQ-R

ASDM100N15KQ 100V N-Channel MOSFET Features · Advanced Trench Technology · Provide Excellent RDS(ON) and Low Gate Charge · Lead free product is acquired Product Summary V DS R @ VGS=10 V DS(on),Typ ID Application 10 0 V 92 mΩ 15 A · Load Switch · PWM Application · Power management D (1) G S TO-252 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 15 A TC = 100℃ 6.5 A 60 A 6 mJ 44 W 3.4 ℃/W -55 to +175 ℃ ID Continuous Drain Current IDM Pulsed Drain Current EAS note1 Single Pulsed Avalanche Energy note2 TC = 25℃ PD Power Dissipation RθJC Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range Sep 2022 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 - - V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA 1.0 1.5 2.5 V On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA RDS(on) Static Drain-Source on-Resistance VGS=10V, ID=5A - 92 110 mΩ note3 VGS=4.5V, ID=3A - 95 114 mΩ - 744 - pF - 35 - pF - 11 - pF - 20 - nC - 2.8 - nC - 4 - nC - 6 - ns - 7 - ns - 21 - ns - 3 - ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=25V, VGS=0V, f=1.0MHz VDS=50V, ID=2A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=50V, ID=3A, RG=1.8Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A ISM MaximumPulsedDraintoSourceDiodeForwardCurrent - - 60 A VSD Drain to Source Diode Forward Voltage - - 1.2 V trr Body Diode Reverse Recovery Time - 22 - ns Qrr Body Diode Reverse Recovery Charge - 29 - nC VGS=0V, IS=10A IF=10A, dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω,IAS=5A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% Sep 2022 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 25 ID (A) ID (A) 25 10V 20 20 4.5V 3.5V 15 15 3V 125℃ 10 10 5 5 2.5V VDS(V) 0 0 1 2 3 4 5 25℃ 0 0 Figure 3: On-resistance vs. Drain Current 120 1.0 5.0 6.0 IS(A) 102 110 90 4.0 Figure 4 : Body Diode Characteristics RDS(ON) (mΩ) 100 VGS (V) 3.0 2.0 VGS =4.5V 101 VGS =10V 100 125℃ 25℃ 0.6 VSD (V) 0.8 1.0 80 ID (A) 70 0 2 4 6 8 Figure 5: Gate Charge Characteristics 10 8 10-1 0 0.2 0.4 1.4 1.6 Figure 6: Capacitance Characteristics VGS (V) 104 VDS=50V ID =2A C(pF) Ciss 103 6 4 102 Coss 2 0 0 1.2 Qg (nC) 4 Sep 2022 Version1.0 8 12 3/8 16 20 Crss 101 0 10 VDS(V) 20 30 www.ascendsemi.com 40 50 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) 1.3 2.5 1.2 RDS (on) 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 Tj (℃) -50 0 50 100 150 200 I D(A) 12 2 10 10μs 1 10 100μs Limited by R DS(on) 1ms 10ms 100ms DC Tc=25 ℃ Single pulse 10-1 10-2 0.1 Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 100 0.5 -100 I D(A) 10 8 6 4 2 VDS (V) 10 1 0 100 Tc (℃) 0 25 50 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C ( ℃/W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10 -5 Sep 2022 Version1.0 10 -4 10-3 TP(s) 10-2 4/8 P DM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *ZthJC +T C 10 -1 10 0 101 www.ascendsemi.com 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms Sep 2022 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100N15KQ-R 100N15 TO-252 Tape&Reel 2500/ Reel PACKAGE MARKING TO-252 Sep 2022 Version1.0 100N15 6/8 www.ascendsemi.com 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET TO-252 Sep 2022 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM100N15KQ 100V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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