ASDM100R066NF-T

ASDM100R066NF 100V N-CHANNEL MOSFET Features       Advanced Trench Process Technology Low RDS(ON) to Minimize Conduction Losses Low Qg and Capacitance to Minimize Driver Losses Superior thermal resistance Excellent Gate Charge x RDS(ON) Product (FOM) Fully Characterized Capacitance and Avalanche SOA  Pb-free lead plating; RoHS Compliant Product Summary V 100 V RDS(on),Max@VGS =10V 6.6 mΩ ID 90 A DS Applications  Power Management in Desktop Computer or DC/DC Converters.  Isolated DC/DC Converters in Telecom and Industrial. G D S TO-220F Absolute Maximum Ratings (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V TC = 25°C 90 A TC = 100°C 40 A TC = 25°C 360 A 24 A 144 mJ 50 W -55 to +150 °C ID ID Drain Current-Continuous IDM Drain Current-Pulsed IAS Non-repetitive Avalanche Current Note C, E EAS Single Pulse Drain-to-Source Avalanche Energy Note C, D Ptot Maximum Power Dissipation TC = 25°C Operating and Storage Temperature Range IEC climatic category; DIN IEC 68-1: 55/150/56 TJ, TSTG Note A Thermal Resistance Ratings Symbol Parameter RθJA Junction-to-Ambient RθJS Junction-to-Soldering Point Conditions Note B Min. Typ. Max. Unit Steady State - - 40 °C/W Steady State - - 3 °C/W Notes: A. Repetitive rating, pulse width limited by junction temperature TJmax = +150°C. Ratings are based on low frequency and duty cycles to keep initial TJ = +25°C. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJS is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air. C. Limited by TJmax, starting TJ = +25°C, L = 0.5mH, Rg = 50Ω, VGS = 10V. D. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. E. Guaranteed by design. Not subject to product testing. F. Repetitive Avalanche Current Starting TJ = +25°C, L= 0.5mH, IAS = 24A, VGS = 10V, VDD = 100V NOV 2021 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM100R066NF 100V N-CHANNEL MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC CHARACTERISTICS Symbol V(BR)DSS Parameter Conditions Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Min. Typ. Max. Unit VGS = 0V, IDS = 10mA 100 - - V VDS = 80V, VGS = 0V - - 1 μA VDS = 80V, VGS = 0V, TJ = 125°C - - 100 μA VGS = ±20V, VDS = 0V - - ±100 nA Min. Typ. Max. Unit 1.0 - 2.5 V STATIC CHARACTERISTICS Symbol Parameter Conditions VGS(TH) Gate Threshold Voltage VDS = VGS, IDS = 250μA RDS(ON) Drain-Source On-State Resistance VGS = 10V, IDS = 20A - - 6.6 mΩ RDS(ON) Drain-Source On-State Resistance Note A VGS = 4.5V, IDS = 15A - - 8 mΩ Rg Gate Resistance Note E VGS = 0V, VDS = 0V, f = 1MHz - 0.7 - Ω gfs Forward Transconductance VDS = 5V, IDS = 15A - 60 - S Min. Typ. Max. Unit - 2551 - pF Note A DYNAMIC CHARACTERISTICS Note E Symbol Parameter Conditions Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 1MHz Coss Output Capacitance VDS = 50V, VGS = 0V, f = 1MHz - 495 - pF Crss Reverse Transfer Capacitance VDS = 50V, VGS = 0V, f = 1MHz - 34 - pF Td(on) Turn-On Delay Time VDS = 50V, VGS = 10V, IDS = 20A, RGEN = 3.3Ω - 19.6 - ns Rise Time VDS = 50V, VGS = 10V, IDS = 20A, RGEN = 3.3Ω - 20.8 - ns tr Td(off) tf Turn-Off Delay Time VDS = 50V, VGS = 10V, IDS = 20A, RGEN = 3.3Ω - 18.8 - ns Fall Time VDS = 50V, VGS = 10V, IDS = 20A, RGEN = 3.3Ω - 4.8 - ns GATE CHARGE CHARACTERISTICS Note E Symbol Min. Typ. Max. Unit Qgs Gate to Source Gate Charge Parameter VDD = 50V, ID = 30A, VGS = 0 to 10V Conditions - 9.7 - nC Qg(th) Gate charge at threshold VDD = 50V, ID = 30A, VGS = 0 to 10V - 5.3 - nC Qgd Gate to Drain Charge VDD = 50V, ID = 30A, VGS = 0 to 10V - 16.9 - nC QSW Switching charge VDD = 50V, ID = 30A, VGS = 0 to 10V - 21.3 - nC Qg Gate charge total VDD = 50V, ID = 30A, VGS = 0 to 10V - 56.1 - nC Qg Gate charge total VDD = 50V, ID = 30A, VGS = 0 to 4.5V - 30.1 - nC Vpalteau Gate plateau voltage VDD = 50V, ID = 30A, VGS = 0 to 10V - 3.5 - V Qg(sync) Gate charge total, sync. FET (Qg - Qgd) VDS = 0.1V, VGS = 0 to 10V - 39.2 - nC Min. Typ. Max. Unit REVERSE DIODE Symbol Parameter Conditions IS Diode continuous forward current TC = 25°C - - 90 A ISM Diode pulse current TC = 25°C, 100μs - - 360 A VSD Diode Forward Voltage Note A VGS = 0V, IF = 20A - - 1.2 V trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Note E NOV 2021 Version1.0 Note E 2/8 VDD = 50V, IF = 20A, di/dt = 100A/μs - 47 - ns VDD = 50V, IF = 20A, di/dt = 100A/μs - 55 - nC www.ascendsemi.com 0755-86970486 ASDM100R066NF 100V N-CHANNEL MOSFET Typical Operating Characteristics Transfer Characteristics 120 On-Region Characteristics 450 VDS=20V TOP VGS=10V VGS=7V VGS=6V VGS=5.5V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V 400 100 350 Tj=125℃ 80 ID, Drain Current (A) ID, Drain Current (A) Tj=25℃ 60 40 300 250 200 150 100 20 50 0 0 0 2 3 4 VGS, Gate-Source Voltage (V) 5 6 0 On-Resistance vs. Drain Current and Gate 14 2 3 4 VDS, Drain-to-Source Voltage (V) 5 6 On-Resistance vs. Gate-Source Voltage ID=20A 12 VGS=4.5V 10 8 6 VGS=10V 4 15 Tj=125℃ 10 5 Tj=25℃ 2 0 0 10 20 30 40 ID, Drain Current (A) 50 0 60 2 On-Resistance vs. Junction Temperature 2.2 VGS(th), Gate-Source Threshold Voltage (V) 1.8 VGS=10V, ID=20A 1.6 3 4 1.4 VGS=4.5V, ID=15A 1.2 1 5 6 7 8 VGS, Gate-to-Source Voltage (V) 9 10 150 175 Gate Threshold Voltage 2.2 2 Normalized Drain-to-Source On Resistance 1 20 Drain-to-Source on Resistance (mΩ) RDS(on) , Drain-to-Source On Resistance (mΩ) 1 2 1.8 ID=2.5mA 1.6 ID=250μA 1.4 1.2 1 0.8 0.8 0 25 NOV 2021 Version1.0 50 75 100 125 TJ, Junction Temperature (℃) 3/8 150 175 0 25 50 75 100 125 Tj, Junction Temperature (℃) www.ascendsemi.com 0755-86970486 ASDM100R066NF 100V N-CHANNEL MOSFET Typical Operating Characteristics (Cont.) Drain-source breakdown voltage vs. Junction Temperature Body-Diode Characteristics 100 ID=1mA 1.08 IS, Reverse Drain Current (A) VDSS, Normalized Drain-Source Breakdown Voltage 1.1 1.06 1.04 1.02 Tj=125℃ Tj=25℃ 10 1 0.98 0 25 50 75 100 125 TJ, Junction Temperature (℃) 150 1 175 0 Zero Gate Voltage Drain Current vs. Junction Temperature 100 0.2 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) 1.6 Capacitance vs. Drain to Source Voltage 100000 f=1MHz VDS=100V 10000 10 Cj, Junction Capacitance (pF) IDSS, Drain-Source Leakage Current (uA) 1.4 1 0.1 Ciss 1000 Coss 100 Crss 10 0.01 0 25 50 75 100 125 TJ, Junction Temperature (℃) 150 1 175 0 Maximum Forward Biased Safe Operating Area 1000 10 20 30 40 50 60 70 VDS, Drain-Source Voltage (V) 80 90 100 Gate-Charge Characteristics 10 VDS=50V ID=20A 9 ID,Drain Current (A) 100uS 10 1mS 10mS 1 TjMAX=150℃ Single Pulse DC Tc=25℃ VGS, Gate-to-Source Voltage (V) 8 100 7 6 5 4 3 2 1 0.1 0 0.1 1 10 VDS, Drain to Source Voltage (V) NOV 2021 Version1.0 4/8 100 0 10 20 30 40 Qg, Total Gate Charge (nC) www.ascendsemi.com 50 0755-86970486 60 ASDM100R066NF 100V N-CHANNEL MOSFET Typical Operating Characteristics (Cont.) Transient Thermal Resistance ZθJC, Normalized Transient Thermal Resistance 10 D= Ton/T TJ=TC+PD*ZθJC*RθJC RθJC=3℃/W 1 0.1 0.01 0.001 0.0001 Single Pulse 0.00001 0.000001 10 ZθJA, Normalized Transient Thermal Resistance In descending oreder: D=0.9, 0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, 0.002, Single Pulse 0.00001 0.0001 0.001 0.01 Pulse Width (S) 0.1 1 10 100 in descending oreder: D=0.9, 0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, 0.002, Single D= Ton/T TJ=TA+PD*ZθJA*RθJA RθJA=40℃/W 1 0.1 0.01 0.001 0.0001 Single Pulse 0.00001 0.000001 0.000001 0.00001 NOV 2021 Version1.0 0.0001 0.001 5/8 0.01 0.1 Pulse Width (S) 1 10 100 www.ascendsemi.com 1000 0755-86970486 10000 ASDM100R066NF 100V N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100R066NF-T 100R066N TO-220F Tube 50/Tube PACKAGE MARKING TO-220F 100R066N NOV 2021 Version1.0 6/8 www.ascendsemi.com 0755-86970486 ASDM100R066NF 100V N-CHANNEL MOSFET 2.5±0.05 TO-220F Package Information NOV 2021 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM100R066NF 100V N-CHANNEL MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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