ASDM100R066NQ-R

ASDM100R066NQ 100V N-CHANNEL MOSFET Features Product Summary      100 V VDS RDS(on),Typ @ VGS=10V 5.9 mΩ 68 ID A Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100% EAS Guaranteed Green Device Available Applications  Power Management in Desktop Computer or DC/DC Converters.  Isolated DC/DC Converters in Telecom and Industrial. D G S DFN5x6-8 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current1,6 68 A ID@TC=70℃ Current1,6 48 A 140 A 61 mJ 35 A 108 W Continuous Drain IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy IAS Avalanche Current Total Power PD@TC=25℃ 3 Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-Ambient Typ. 1(t≦10s) 1 Thermal Resistance Junction-Ambient RθJC NOV 2018 Version1.1 Thermal Resistance 1/7 Junction-Case1 Max. Unit --- 25 ℃/W --- 55 ℃/W --- 1.15 ℃/W www.ascendsemi.com 0755-86970486 ASDM100R066NQ 100V N-CHANNEL MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) IDSS Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit V VGS=0V , ID=250uA 100 --- --- Static Drain-Source On-Resistance 2 VGS=10V , ID=13.5A --- 5.9 8 Static Drain-Source On-Resistance2 VGS=4.5V , ID=11.5A --- 7.6 10.5 VGS=VDS , ID =250uA 1.2 --- 2.3 VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 Gate Threshold Voltage Drain-Source Leakage Current m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 85 --- S Qg Total Gate Charge (10V) --- 45 --- Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 9.5 --- Qgd Gate-Drain Charge --- 4.8 --- Td(on) Turn-On Delay Time --- 10 --- Tr Td(off) Tf VDS=50V , VGS=10V , ID=13.5A Rise Time VDD=50V , VGS=10V , RG=3, --- 6.5 --- Turn-Off Delay Time ID=13.5A --- 45 --- --- 7.5 --- Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=50V , VGS=0V , f=1MHz nC ns --- 3320 --- --- 605 --- --- 20 --- Min. Typ. Max. Unit --- --- 48 A pF Diode Characteristics Symbol IS Parameter Continuous Source Current Conditions 1,5,6 VG=VD=0V , Force Current Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.1 V trr Reverse Recovery Time IF=13.5A , di/dt=100A/µs , --- 33 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 150 --- nC VSD Diode Forward Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.3mH,IAS=35A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. NOV 2018 Version1.1 2/7 www.ascendsemi.com 0755-86970486 ASDM100R066NQ 100V N-CHANNEL MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source-Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ NOV 2018 Version1.1 3/7 www.ascendsemi.com 0755-86970486 ASDM100R066NQ 100V N-CHANNEL MOSFET Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Td(off) Ton Tf Toff Fig.10 Switching Time Waveform NOV 2018 Version1.1 4/7 VGS Fig.11 Unclamped Inductive Switching Waveform www.ascendsemi.com 0755-86970486 ASDM100R066NQ 100V N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100R066NQ-R 100R066N DFN5x6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5x6-8 NOV 2018 Version1.1 100R066N 5/7 www.ascendsemi.com 0755-86970486 ASDM100R066NQ 100V N-CHANNEL MOSFET DFN5x6-8 PACKAGE IN FORMATION NOV 2018 Version1.1 6/7 www.ascendsemi.com 0755-86970486 ASDM100R066NQ 100V N-CHANNEL MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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