ASDM100R045NP-T

ASDM100R045NP 100V N-Channel MOSFET Product Summary General Features ● High density cell design for ultra low Rdson V DS 100 V ● Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 4.5 mΩ ● Excellent package for good heat dissipation ID 135 A ● Fully characterized avalanche voltage and current ● Special process technology for high ESD capability Application ●Automotive applications ●Hard switched and high frequency circuits ●Uninterruptible power supply G D S TO-220 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Parameter Symbol Value Unit 100 V TC=25℃ 135 A TC=70℃ 48 A ±20 V TC=25℃ 700 A TC=25℃ 100 W Condition VDS Drain-Source Voltage ID Continuous Drain Current1 VGS Gate-Source Voltage IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature -55 to 175 ℃ 2 Thermal Data Symbol Parameter Typ. Max RθJA Thermal Resistance-Junction to Ambient -- 62 RθJc Thermal Resistance-Junction to Case -- 0.5 Unit ℃/W NOV 2018 Version2.0 1/8 www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Limit Min Typ Max Unit Static Characteristic BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 -- -- V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 3.0 4 V IDSS Drain-Source Leakage Current VDS=80V, VGS=0V -- -- 1 VDS=48V, VGS=0V -- -- 100 uA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA - RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - 4.5 5.0 mΩ -- 2890 -- -- 881 -- Dynamic Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Recerse Transfer Capacitance -- 13.2 -- td(on) Turn-On Delay Time -- 16 -- tr Turn-On Rise Time -- 13 -- td(off) Turn-off Delay Time -- 28 -- tf Turn-Off Fall Time -- 7.5 -- -- 23 -- -- 5.2 -- -- 7.3 -- -- -- 1.2 V -- 46 -- nS -- 182 -- nC VDS=40V,VGS=0V,f=1MHz VDD=40V,VGS=10V , RG=2Ω, ID=20A pF nS Gate Charge Characteristic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=30V, VGS=10V, ID=30A nC Reverse diode Characteristic ISD=20A, VGS=0V VSD forward on voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge NOV 2018 Version2.0 2/8 VR=0V,IF=20A, DIF/dt=100A/uS www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET Typical Electrical and Thermal Characteristics (Curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18051v1 ID (A) AM18052v1 K δ=0.5 0.2 100 th in n tio by m ra pe ited O m Li 10 is ea a r (on ) S RD ax 0.1 0.05 is 100µs 10 -1 0.02 c 0.01 1ms 1 Tj=175°C Tc=25°C Single pulse 0.1 0.1 1 VDS(V) 10 Figure 4. Output characteristics VGS=10V 400 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s) Figure 5. Transfer characteristics AM18042v1 ID (A) Single pulse 10ms 8V AM18043v1 ID (A) VDS=4V 300 350 7V 300 250 200 250 200 150 6V 150 100 100 50 50 5V 0 0 4 2 6 8 VDS(V) Figure 6. Gate charge vs gate-source voltage AM18044v1 VGS (V) VDD=50V ID=110A 12 0 0 2 4 8 6 VGS(V) Figure 7. Static drain-source on-resistance AM18054v1 RDS(on) (mΩ) VGS=10V 4.50 10 4.40 8 4.30 6 4.20 4.10 4 4.00 2 3.90 3.80 0 0 NOV 2018 Version2.0 40 80 3/8 120 Qg(nC) 0 20 40 60 80 100 ID(A) www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM18046v1 C (pF) AM18047v1 VGS(th) (norm) ID=250µA 1.1 Ciss 8000 1 7000 6000 0.9 5000 0.8 4000 0.7 3000 0.6 2000 0.5 1000 Coss Crss 100 VDS(V) 0 0 20 60 40 80 Figure 10. Normalized on-resistance vs temperature AM18048v1 RDS(on) 0.4 -75 -25 25 75 125 TJ(°C) Figure 11. Normalized VDS vs temperature AM18049v1 VDS (norm) (norm) ID=55A 2 1.04 1.8 1.03 1.6 1.02 1.4 1.01 1.2 1 1 0.99 0.8 0.98 0.6 0.97 0.4 -75 -25 25 75 125 TJ(°C) 0.96 -75 ID=1mA -25 25 75 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM18055v1 VSD (V) TJ=-55°C 1 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0.3 0 NOV 2018 Version2.0 20 40 60 4/8 80 100 ISD(A) www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID 10% 0 VDD VDD VDS 90% VGS AM01472v1 NOV 2018 Version2.0 5/8 0 10% AM01473v1 www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100R045NP-T 100R045N TO-220 Tube 50/Tube MARKING PACKAGE 100R045 TO-220 NOV 2018 Version2.0 6/8 www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET TO-220 NOV 2018 Version2.0 7/8 www.ascendsemi.com 0755-86970486 ASDM100R045NP 100V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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