ASDM12N65F-T

ASDM12N65F 650V N-Channel Power MOSFET Product Summary Features      Low Gate Charge Low ON Resistance Improved dv/dt Capability 100% Avalanche Tested RoHS compliant V DS R DS(on),Typ I @ VGS=10 V D 650 V 0.65 Ω 12 A Applications      Switching Mode Power Supplies (SMPS) PWM Motor Controls AC to DC Converters LED Lighting Adapter ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted) Parameter Limit Symbol Drain to Source Voltage VDS o Continuous Drain Current (@TC=25 C) Continuous Drain Current (@TC=100oC) Drain current pulsed (2) Unit TO-220F ID 650 V 12 (1) A 7.5 (1) A (1) A IDM 40 Gate to Source Voltage VGS ±30 V Single pulsed Avalanche Energy (3) EAS 576 mJ dv/dt 5 V/ns PD 24 W 0.19 W/oC Peak diode Recovery dv/dt (4) Total power dissipation (@TC=25oC) o Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum lead temperature for soldering purpose TSTG, TJ TL -55 to + 150 o C 260 o C Notes 1. Drain current is limited by maximum junction temperature. 2. Repetitive rating : pulse width limited by junction temperature. 3 . L = 8mH, IAS = 12A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC 4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ BVDSS, Starting at TJ =25oC THERMAL CHARACTERISTICS Parameter Symbol Value TO-220F Thermal resistance, Junction to case (Maximum) Rthjc 2.1 Thermal resistance, Junction to ambient (Maximum) Rthja 62 Aug 2020 Version2.0 1/9 Unit o C/W o C/W Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS ( TC = 25oC unless otherwise specified ) Parameter Symbol Test conditions Min. Typ. Max. Unit Off Characteristics Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current Gate to source leakage current, forward Gate to source leakage current, reverse BVDSS ΔBVDSS / ΔTJ IDSS IGSS VGS=0V, ID=250uA 650 -- -- V ID=250uA, referenced to 25oC -- 0.65 -- V/oC VDS=650V, VGS=0V -- -- 1 uA VDS=520V, TC=125oC -- -- 50 uA VGS=30V, VDS=0V -- -- 100 nA VGS=-30V, VDS=0V -- -- -100 nA 2.5 3.5 4.5 V -- 0.65 0.8 Ω -- 9.6 -- S -- 1890 -- On Characteristics Gate threshold voltage VGS(TH) VDS=VGS, ID=250uA Drain to source on state resistance Forward Transconductance RDS(ON) VGS=10V, ID=6A VDS=30V, ID=6A Gfs Dynamic Characteristics Input capacitance Ciss Output capacitance Coss -- 144 -- Reverse transfer capacitance Crss -- 9.9 -- Turn on delay time td(on) -- 33 -- -- 41 -- -- 102 -- Rising time tr Turn off delay time Fall time td(off) VGS=0V, VDS=25V, f=1MHz VDS=325V, ID=12A， RG=25Ω，VGS=10V pF ns tf -- 37 -- Total gate charge Qg -- 38 -- Gate-source charge Qgs -- 9 -- Gate-drain charge Qgd -- 13 -- Gate Resistance Rg -- 1.4 -- Ω VDS=520V, VGS=10V, ID=12A VDS=0V, Scan F mode nC SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max. Unit Continuous source current IS -- -- 12 A Pulsed source current ISM Integral reverse p-n Junction diode in the MOSFET -- -- 48 A Diode forward voltage drop. VSD IS=12A, VGS=0V -- -- 1.3 V Reverse recovery time Trr -- 480 -- ns Reverse recovery Charge Qrr IS=12A, VGS=0V, dIF/dt=100A/us -- 4.5 -- uC Peak Reverse Recovery Current Irrm IS=12A, dIF/dt=100A/us -- 18.5 -- A Aug 2020 Version2.0 2/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET Fig1. Output characteristics Fig2. Drain-source on-state resistance Fig3. Gate charge characteristics Fig 4. Capacitance Characteristics Fig 6. BVDSS vs junction temperature Fig 5. RDS(ON) vs junction temperature Aug 2020 Version2.0 3/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET Fig 7. Forward characteristics of reverse diode Fig 8. VGS（TH） vs junction temperature Fig 10. Transfer characteristics Fig 9 . Safe operating area (TO-220F) Fig 11 . Transient thermal impedance(TO-220F) Aug 2020 Version2.0 4/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET VGS QG QGD QGS Charge Fig 12. Gate charge test circuit & waveform 10VVDS RL RGS VDS VDD VIN 10VIN 90% DUT 10% 10% td(on) tr td(off) tON tf tOFF Fig 13. Switching time test circuit & waveform Fig 14. Unclamped Inductive switching test circuit & waveform Aug 2020 Version2.0 5/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) VDS RG 10VGS IRM VDD Diode reverse current Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop Fig 15. Peak diode recovery dv/dt test circuit & waveform Aug 2020 Version2.0 6/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM12N65F-T 12N65 Package TO-220F Tube Quantity 50/Tube MARKING PACKAGE TO-220F Aug 2020 Version2.0 Packing 12N65 7/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET Package Dimensions TO-220F Aug 2020 Version2.0 8/9 Ascend Semicondutor Co.,Ltd ASDM12N65F 650V N-Channel Power MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com Aug 2020 Version2.0 9/9 Ascend Semicondutor Co.,Ltd