ASDM100R160NP-T

ASDM100R160NP 100V N-Channel Power MOSFET General Description Product Summary ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery Applications ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply V DS 100 V R DS(on),Typ@ VGS=10 V 12 mΩ ID 45 A Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 45 TC=25℃ Drain Current Unit ID A 28.5 TC=100℃ Pulsed Drain Current A IDM 180 A Avalanche energy B EAS 81 mJ 72 Tc=25℃ Total Power Dissipation C PD W 28.8 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 15 20 40 50 1.35 1.7 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State May 2019 Version1.0 1/7 RθJC www.ascendsemi.com ℃/W 0755-86970486 ASDM100R160NP 100V N-Channel Power MOSFET Electrical Characteristics (Tj=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.7 3 V VGS= 10V, ID=20A 12 17 mΩ Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=20A 17 21.5 mΩ 1.3 V 45 A Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG 1 V IS=20A,VGS=0V f= 1 MHz, Open drain Ω 1 Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 17 Total Gate Charge Qg 16 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr 1064 VDS=50V,VGS=0V,f=1MHZ 374 pF Switching Parameters VGS=10V,VDS=50V,ID=25A 5.6 nC 2.4 42 IF=20A, di/dt=100A/us Reverse Recovery Time trr 39.8 Turn-on Delay Time tD(on) 39.2 Turn-on Rise Time tr 11 ns VGS=10V, VDD=50V,ID=25A RGEN=2.2Ω Turn-off Delay Time Turn-off fall Time A. B. C. D. tD(off) 53.2 tf 15.8 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH, IAS=25A,. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. May 2019 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM100R160NP 100V N-Channel Power MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. : On-Resistance vs. Drain Current and Gate Voltage May 2019 Version1.0 3/7 Figure2. Transfer Characteristics Figure4. Gate Charge Figure6.Normalized On-Resistance www.ascendsemi.com 0755-86970486 ASDM100R160NP 100V N-Channel Power MOSFET Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance May 2019 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM100R160NP 100V N-Channel Power MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM100R160NP-T 100R160N Packing TO-220 Tube Quantity 50/Tube MARKING PACKAGE TO-220 May 2019 Version1.0 Package 100R160N 5/7 www.ascendsemi.com 0755-86970486 ASDM100R160NP 100V N-Channel Power MOSFET TO-220 May 2019 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM100R160NP 100V N-Channel Power MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com May 2019 Version1.0 7/7 www.ascendsemi.com 0755-86970486