ASDM100R520PKQ-R

ASDM100R520PKQ -100V P-Channel MOSFET Features Product Summary  Advanced Split Gate Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired -100 V R DS(on),Typ@ VGS=-10 V 40 mΩ ID -35 A V Application DS  Load Switch  PWM Application  Power management D G S TO-252 P-channel Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -35 A TC = 100℃ -23 A -140 A 87 mJ 140 W 1.1 ℃/W -55 to +175 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range NOV 2020 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -100 - - V IDSS Zero Gate Voltage Drain Current VDS=-100V, VGS=0V, - - -1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA -1.0 -1.6 -2.5 V On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA RDS(on) Static Drain-Source on-Resistance VGS=-10V, ID=-20A - 40 52 note3 VGS=-4.5V, ID=-10A - 44 62 - 2120 - pF - 194 - pF - 13 - pF - 40 - nC - 7.8 - nC - 8.6 - nC - 13 - ns - 39 - ns - 100.1 - ns - 105.3 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=-50V, VGS=0V, f=1.0MHz VDS=-50V, ID=-5A, VGS=-10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD=-50V, ID=-5A, RG=6Ω, VGS=-10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -140 A VSD Drain to Source Diode Forward Voltage - - -1.2 V - 104 - ns - 280 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=-30A TJ=25℃, IF=-5A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-18.7A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% NOV 2020 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 50 50 -10V 40 25℃ 30 30 20 20 -2V 10 2 4 10 6 8 10 Figure 3:On-resistance vs. Drain Current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -IS(A) 10 50 -VGS (V) 0 0 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 60 125℃ VGS =-1V -VDS(V) 0 0 TA=-55℃ 40 -3V -4.5V -ID (A) VGS =-4.5V TJ=150℃ 40 VGS=-10V 30 TJ=-50℃ TJ=-25℃ 1 20 10 -ID(A) 0 0 5 20 15 10 25 30 Figure 5: Gate Charge Characteristics 10 8 0.1 0.0 0.2 0.4 -VSD(V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS(V) 105 VDS =-50V ID=-5A C(p F) 104 Ciss 6 103 4 Coss 102 2 0 0 Qg(nC) 10 NOV 2020 Version1.0 20 30 40 101 0 50 3/8 -VDS (V) 10 20 30 Crss 40 50 60 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 -VBR(DSS) 2.5 1.2 RDS(on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 -ID(A) 42 Limited by R DS(on) 10 10μs 100 150 200 -ID(A) 28 100μs 1ms 101 21 10ms 100ms 14 DC TC=25℃ Single pulse 10-1 0.1 50 35 2 100 0 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 103 Tj (℃) -50 7 -VDS (V) 10 1 100 0 1000 0 25 50 TC (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 10-2 10-3 -6 10 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 Notes: D=0.01 Single pulse 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC+TC TP(s) PDM 10-1 10-5 10-4 NOV 2020 Version1.0 10-3 10-2 10-1 100 101 4/8 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms NOV 2020 Version1.0 5/8 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM100R520PKQ-R Marking Package Packing 100R520P TO-252 Tape&Reel 2500/Reel MARKING PACKAGE 100R520P TO-252 NOV 2020 Version1.0 Quantity 6/8 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET TO-252 NOV 2020 Version1.0 7/8 Ascend Semicondutor Co.,Ltd ASDM100R520PKQ -100V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2020 Version1.0 8/8 Ascend Semicondutor Co.,Ltd