ASDM100R520PQ-R

ASDM100R520PQ -100V P-Channel MOSFET Features Product Summary · Advanced Split Gate Trench Technology · Excellent RDS(ON) and Low Gate Charge · Lead free product is acquired V DS -100 V 34 mΩ - 40 A R DS(on),Typ@ VGS=-10 V ID Application · Load Switch · PWM Application · Power management DFN5*6-8 P-Channel Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -40 A TC = 100℃ -16 A -160 A 81 mJ 54 W 2.3 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range NOV 2021 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -100 - - V IDSS Zero Gate Voltage Drain Current VDS=-100V, VGS=0V, - - -1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA -1.0 -1.4 -2.5 V On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA RDS(on) Static Drain-Source on-Resistance VGS=-10V, ID=-20A - 34 52 note3 VGS=-4.5V, ID=-10A - 38 60 - 1458 - pF - 133 - pF - 8.9 - pF - 40 - nC - 7.8 - nC - 8.6 - nC - 13 - ns - 39 - ns - 100.1 - ns - 105.3 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=-50V, VGS=0V, f=1.0MHz VDS=-50V, ID=-5A, VGS=-10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD=-50V, ID=-5A, RG=6Ω, VGS=-10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -40 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -160 A VSD Drain to Source Diode Forward Voltage - - -1.2 V - 104 - ns - 280 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=-25A TJ=25℃, IF=-5A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-18A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% NOV 2021 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 50 -10V 40 25℃ 30 30 20 20 -2V 10 2 4 125℃ 10 V GS=-1V -V DS(V) 0 0 T A=-55℃ 40 -3V -4.5V 6 8 0 10 Figure 3:On-resistance vs. Drain Current -VGS (V) 0 10 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4 : Body Diode Characteristics RDS(ON) (mΩ) 60 -ID (A) 50 -IS(A) VGS =-4.5V TJ =150℃ 40 30 T J=-50℃ TJ =-25℃ 1 VGS =-10V 20 10 -ID(A) 0 0 5 10 15 20 25 30 0.1 0.0 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 -VSD (V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -V GS(V) 105 VDS=-50V ID =-5A C(pF) 104 Ciss 6 103 4 Coss 2 10 2 0 0 Q g(nC) 10 NOV 2021 Version1.0 20 30 3/8 40 50 5 -VDS (V) 0 10 20 30 Crss 40 www.ascendsemi.com 50 60 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 -VBR(DSS) Figure 8: Normalized on Resistance vs. Junction Temperature 2.5 1.2 RDS(on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 -ID(A) 30 Limited by RDS(on) 10 10μs 50 100 150 200 -ID(A) 20 100μs 101 15 1ms 10ms 10 100ms TC=25℃ Single pulse 10-1 0.1 0 25 2 100 Tj (℃) -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 103 0.5 -100 DC -VDS (V) 10 1 5 100 1000 0 0 25 50 TC (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) PDM 10-1 10-2 10-3 -6 10 10-5 10-4 NOV 2021 Version1.0 10-3 10-2 4/8 10-1 100 101 www.ascendsemi.com 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms NOV 2021 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100R520PQ-R 100R520P DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5*6-8 NOV 2021 Version1.0 100R520P 6/8 www.ascendsemi.com 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET DFN5x6_P, 8 Leads NOV 2021 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM100R520PQ -100V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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