ASDM150R090NP-T

ASDM150R090NP 150V N-Channel MOSFET Features Product Summary • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) V DS R DS(on),Typ I • Qualified according to JEDEC criteria @ VGS=10 V D 150 V 7.9 mΩ 75 A Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management • UPS (Uninterrupible Power Supplies) Absolute Maximum Ratings Parameter Drain-source voltage Symbol Value Unit VDS 150 V ID 75 A Continuous drain current TC = 25°C (Silicon limit) TC = 100°C (Silicon limit) 54 Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID pulse 300 A Avalanche energy, single pulse (Ias=30A, Rg=25Ω) EAS 225 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C ) Ptot 128 W Tj , T stg -55...+150 °C Tsold 260 °C Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Thermal Resistance Parameter Symbol Thermal resistance, junction – case. Thermal resistance, junction - ambient(min. footprint) NOV 2020 Version1.1 1/10 Value Unit Test Condition 1.0 °C/W - 60.5 °C/W - min. typ. max. RthJC - 0.75 RthJA - - www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 150 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 1.0 1.9 2.5 V VDS=VGS,ID=250uA VDS=120V,VGS=0V Zero gate voltage drain current IDSS - 0.1 1 - 10 100 - - 100 7.9 10.0 - 9.3 11.3 gfs - 55 - Input Capacitance Ciss - 3802 - Output Capacitance Coss - 657 - Reverse Transfer Capacitance Crss 52 - Gate Total Charge QG 22.7 34 51.0 Gate-Source charge Qgs 9.9 14.9 22.4 Gate-Drain charge Qgd 4.8 7.2 10.8 Turn-on delay time td(on) 7.3 14.6 29.2 tr 40.3 80.6 161.2 td(off) 11.15 22.3 44.6 tf 29.35 58.7 117.4 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Transconductance µA Tj=25°C Tj=125°C nA mΩ VGS=±20V,VDS=0V VGS=10V, ID=40A VGS=4.5V, ID=20A S VDS=5V,ID=40A pF VGS=0V, VDS=75V, f=1MHz nC VGS=10V, VDS=75V, ID=40A, f=1MHz ns VGS=10V, VDD=75V, ID=44 A, RG_ext=2.7Ω Dynamic Characteristic Rise time Turn-off delay time Fall time NOV 2020 Version1.1 2/10 www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET RG Gate resistance 1 1.45 2.2 Ω VGS=0V, VDS=0V, f=1MHz Unit Test Condition Body Diode Characteristic Parameter Symbol Value min. typ. max. VSD 0.7 1.00 1.30 V VGS=0V,ISD=40A IS - - 75 A TC = 25°C IS pulse - - 300 A TC = 25°C Body Diode Reverse Recovery Time trr 49.26 73.89 110.835 ns Body Diode Reverse Recovery Charge Qrr Body Diode Forward Voltage Body Diode Continuous Forward Current Body Diode Pulsed Current 2020 Version1.1 IF=40A, dI/dt=100A/µs 3/10 114.67 172 258 nC www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 240 120 10V 220 9V 200 100 180 90 160 VGS=7V 80 140 ID (A) ID (A) VDS=5V 110 8V VGS=6.5V 120 100 70 60 50 80 150°C 40 VGS=5.5V 60 25°C 30 40 20 20 10 VGS=4.5V 0 0 0 1 2 3 4 5 0 2 4 VDS (V) 12.0 6 8 10 VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage Fig 4: Rds(on) vs Gate Voltage 50 46 ID=40A 42 11.0 RDS(on) (mΩ) RDS(on) (mΩ) 38 10.0 VGS=4.5V 34 30 26 150°C 22 9.0 18 14 8.0 25°C 10 VGS=10V 6 7.0 2 5 10 15 20 25 30 3 4 5 6 7 Fig 5: Rds(on) vs. Temperature 9 10 Fig 6: Capacitance Characteristics 2.2 10000 1.8 C - Capacitance (PF) 2.0 RDS(on)_Normalized 8 VGS (V) I D(A) VGS=8V ID=20A 1.6 VGS=10V ID=10A 1.4 1.2 Ciss 1000 Coss 100 Crss 1.0 VGS=0V f=1MHz 10 0.8 25 50 75 100 Tj - Junction Temperature (°C) 2020 Version1.1 4/10 125 150 0 20 40 60 80 100 120 140 VDS (V) www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET Body-diode Forward Fig 8: Body-diode Characteristics Fig 7: Gate ChargeCharacteristics 10 VGS (V) 8 IS - Diode Current(A) VDS=75V ID=40A 6 4 100 150˚C 10 25˚C 1 2 0.1 0 0 5 10 15 20 25 30 35 0.2 40 0.4 Qg (nC) 0.8 1 1.2 1.4 1.6 125 150 175 Fig 10: Drain Current Derating Fig 9: Power Dissipation 80 140 130 70 120 110 60 100 ID (A) 90 80 70 50 40 60 30 50 40 20 30 20 VGS≥10V 10 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us 100 Limited by Rds(on) 10us 100us ID (A) Ptot (W) 0.6 VSD - Diode Forward Voltage(V) 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) 2020 Version1.1 5/10 www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET Fig 12: Max. Transient Thermal Impedance D=0.5 ,0.3 ,0.1, 0.05, 0.02, 0.01, Single pulse ZthJC (˚C/W) 1.000 0.100 0.010 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 1 tp (sec) 2020 Version1.1 6/10 www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET Test Circuit & Waveform 2020 Version1.1 7/10 www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM150R090NP-T 150R090N Packing TO-220 Tube Quantity 50/Tube MARKING PACKAGE TO-220 2020 Version1.1 Package 150R090N 8/10 www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET TO-220 2020 Version1.1 9/10 www.ascendsemi.com 0755-86970486 ASDM150R090NP 150V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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