ASDM80R055NTD-R

ASDM80R055NTD 80V N-Channel MOSFET Features Product Summary •Optimizedforchargers •100%avalanchetested •Superiorthermalresistance •N-channel,Logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitching VDSS 80 V RDS(ON)-Typ@VGS=10V 5.4 mΩ ID 40 A Productvalidation QualifiedaccordingtoJEDECStandard DFN3*3-8 Maximumratings at TA=25°C, unless otherwise specified Parameter Symbol Continuous drain current Values Unit Note/TestCondition 40 40 14 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1) - 160 A TC=25°C - - 38 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 46 2.1 W TC=25°C TA=25°C,RthJA=60K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 1.6 2.7 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 60 K/W - DEC 2018 Version1.0 1/10 Ascend Semicondutor Co.,Ltd ASDM80R055NTD 80V N-Channel MOSFET Electricalcharacteristics atTj=25°C,unlessotherwisespecified Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=20µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.4 7.3 6.5 9.4 mΩ VGS=10V,ID=20A VGS=4.5V,ID=10A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 25 50 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Dynamiccharacteristics Parameter Symbol Values Min. Typ. Ciss - 1400 1800 pF VGS=0V,VDS=40V,f=1MHz Coss - 300 390 pF VGS=0V,VDS=40V,f=1MHz Crss - 16 28 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 5.0 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 2.9 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 14 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 2.6 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) Output capacitance 1) Reverse transfer capacitance 1) Max. Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 4.1 - nC VDD=40V,ID=20A,VGS=0to4.5V Qg(th) - 2.3 - nC VDD=40V,ID=20A,VGS=0to4.5V Gate to drain charge Qgd - 3.3 4.9 nC VDD=40V,ID=20A,VGS=0to4.5V Switching charge Qsw - 5.1 - nC VDD=40V,ID=20A,VGS=0to4.5V Gate charge total Qg - 10 13 nC VDD=40V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.9 - V VDD=40V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to10V Qoss - 19 26 nC VDD=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition DEC 2018 Version1.0 2/10 Ascend Semicondutor Co.,Ltd ASDM80R055NTD 80V N-Channel MOSFET Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge DEC 2018 Version1.0 Values Unit Note/TestCondition 39 A TC=25°C - 156 A TC=25°C - 0.83 1.2 V VGS=0V,IF=20A,Tj=25°C trr - 18 36 ns VR=40V,IF=20A,diF/dt=100A/µs Qrr - 7 14 nC VR=40V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD 3/10 Ascend Semicondutor Co.,Ltd ASDM80R055NTD 80V N-Channel MOSFET Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 40 40 30 30 ID[A] Ptot[W] 50 20 20 10 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 103 175 101 102 1 µs 0.5 10 µs 100 101 0.2 ZthJC[K/W] 100 µs ID[A] 150 TC[°C] 1 ms DC 10 ms 0.1 0.05 10-1 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp DEC 2018 Version1.0 10-4 ZthJC=f(tp);parameter:D=tp/T 4/10 Ascend Semicondutor Co.,Ltd 10-1 ASDM80R055NTD 80V N-Channel MOSFET Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 15 10 V 140 5V 4.5 V 120 10 4V RDS(on)[mΩ] 100 ID[A] 4V 80 60 4.5 V 5V 5.5 V 6V 7V 10 V 5 3.5 V 40 3.2 V 3V 20 2.8 V 0 0.0 0.5 1.0 1.5 0 2.0 0 40 80 VDS[V] 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 80 140 120 60 gfs[S] ID[A] 100 80 40 60 40 20 150 °C 20 0 0 2 25 °C 4 6 8 0 0 VGS[V] 40 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj DEC 2018 Version1.0 20 gfs=f(ID);Tj=25°C 5/10 Ascend Semicondutor Co.,Ltd 60 ASDM80R055NTD 80V N-Channel MOSFET Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 14 3 12 10 2 RDS(on)[mΩ] 6 200 µA VGS(th)[V] max 8 typ 20 µA 1 4 2 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 102 IF[A] C[pF] 103 Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz DEC 2018 Version1.0 1.0 1.5 VSD[V] IF=f(VSD);parameter:Tj 6/10 Ascend Semicondutor Co.,Ltd 2.0 ASDM80R055NTD 80V N-Channel MOSFET Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 7 25 °C 101 100 °C 12 V 6 VGS[V] IAV[A] 30 V 125 °C 48 V 5 4 0 10 3 2 1 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA DEC 2018 Version1.0 7/10 Ascend Semicondutor Co.,Ltd 24 ASDM80R055NTD 80V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM80R055NTD-R 80R055N DFN3*3-8 Tape&Reel 5000/Reel MARKING PACKAGE DFN3*3-8 DEC 2018 Version1.0 80R055N 8/10 Ascend Semicondutor Co.,Ltd ASDM80R055NTD 80V N-Channel MOSFET PackageOutlines DFN3*3-8 PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa DEC 2018 Version1.0 PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 9/10 Ascend Semicondutor Co.,Ltd ASDM80R055NTD 80V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version1.0 10/10 Ascend Semicondutor Co.,Ltd