ASDM60R070NQ-R

ASDM60R070NQ 60V N-Channel MOSFET Features • Super Low Gate Charge Product Summary • 100% EAS Guaranteed • V DS Green Device Available • Excellent CdV/dt effect decline R DS(on),Typ @ VGS=10 V • Advanced high cell density Trench technology I D DFN5*6-8 60 V 6.5 mΩ 75 A N-Channel Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ 10V1 75 A Continuous Drain Current, VGS @ 10V1 47 A 300 A 80 mJ 40 A 41 W IDM EAS Pulsed Drain Current2 Single Pulse Avalanche IAS Energy3 Avalanche Current 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-case 1 NOV 2021 Version1.0 1/7 Typ. 1 Max. Unit --- 62 ℃/W --- 1.4 ℃/W www.ascendsemi.com 0755-86970486 ASDM60R070NQ 60V N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 60 --- --- VGS=10V , ID=10A --- 6.5 8.5 m VGS=4.5V , ID=5A --- 10 12 m VGS=VDS , ID =250uA 1.0 --- 2.5 V VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 --- Ω Qg Total Gate Charge (10V) --- 57 --- --- 8.7 --- VDS=30V , VGS=10V , ID=18A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 14 --- Td(on) Turn-On Delay Time --- 16.2 --- nC Rise Time VDD=30V , VGS=10V , RG=3.3, --- 41.2 --- Turn-Off Delay Time ID=20A --- 56.4 --- Fall Time --- 16.2 --- Ciss Input Capacitance --- 1501 --- Coss Output Capacitance --- 91 --- Crss Reverse Transfer Capacitance --- 69 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 75 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current1,5 Diode Forward Voltage2 Conditions trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , --- 22 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 72 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=50V,VGS=10V,L=0.1mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM60R070NQ 60V N-Channel MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ NOV 2021 Version1.0 3/7 www.ascendsemi.com 0755-86970486 ASDM60R070NQ 60V N-Channel MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Td(off) Ton Tf Toff Fig.10 Switching Time Waveform NOV 2021 Version1.0 4/7 VGS Fig.11 Unclamped Inductive Switching Waveform www.ascendsemi.com 0755-86970486 ASDM60R070NQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60R070NQ-R 60R070N DFN5*6-8 Tape&Reel 4000/Reel PACKAGE MARKING DFN5*6-8 NOV 2021 Version1.0 60R070N 5/7 www.ascendsemi.com 0755-86970486 ASDM60R070NQ H D2 D L1 60V N-Channel MOSFET k L E2 E E1 L2 D1 e b SYMBOL A MILLIMETER MIN Typ. MAX 0.900 1.000 1.100 A1 0.254 REF. 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e A A1 A2 d A2 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 1.200 1.300 1.100 d NOV 2021 Version1.0 6/7 0.100 www.ascendsemi.com 0755-86970486 ASDM60R070NQ 60V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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