ASDM4606S
30V N&P-Channel MOSFET
Product Summary
General Features
● N-Channel
● High power and current handing capability
30
V
mΩ
mΩ
8
A
VDS
RDS(on),Typ VGS=-10V
-30
43
V
mΩ
RDS(on),Typ VGS=-4.5V
ID
56
mΩ
-6
A
VDS
RDS(on),Typ VGS=10V
RDS(on),Typ VGS=4.5V
● Lead free product is acquired
● Surface mount package
30
22
ID
Application
● P-Channel
● PWM applications
● Load switch
● Power management
Top view
ASCEND
SOP-8
N-channel
P-channel
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current
ID
8
-6
A
Pulsed Drain Current (Note 1)
IDM
25
-20
A
Maximum Power Dissipation
PD
2.5
2.5
W
TJ,TSTG
-55 To 150
-55 To 150
℃
N-Ch
89
P-Ch
90
Operating Junction and Storage Temperature Range
Unit
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
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ASDM4606S
30V N&P-Channel MOSFET
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
Gate-Body Leakage Current
IGSS
VDS=24V,VGS=0V
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
1.5
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A
-
22
29
mΩ
Off Characteristics
On Characteristics (Note 3)
Forward Transconductance
VGS=4.5V, ID=4A
-
30
43
mΩ
gFS
VDS=5V,ID=5A
-
15
-
S
C lss
Coss
VDS=15V,VGS=0V,
-
480
-
PF
-
80
-
PF
-
60
-
PF
-
4.5
-
nS
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=15V, RL=3Ω
-
2.5
-
nS
td(off)
VGS=10V,RGEN=3Ω
-
14.5
-
nS
-
3.5
-
nS
-
5.2
-
nC
-
0.85
-
nC
-
1.3
-
nC
-
-
1.3
V
-
-
4
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=15V,ID=5A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
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VGS=0V,IS=3A
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ASDM4606S
30V N&P-Channel MOSFET
P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μ A
-30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.5
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
-
43
52
mΩ
VGS=-4.5V, ID=-4A
-
56
77
mΩ
VDS=-5V,ID=-4.1A
5.5
-
-
S
-
648
-
PF
-
108
-
PF
-
68
-
PF
-
9
-
nS
Off Characteristics
On Characteristics (Note 3)
Forward Transconductance
gFS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-15V,RL=3.6Ω
-
5
-
nS
td(off)
VGS=-10V,RGEN=3Ω
-
28
-
nS
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
13.5
-
nS
Total Gate Charge
Qg
-
14
-
nC
Gate-Source Charge
Qgs
-
3.1
-
nC
Gate-Drain Charge
Qgd
-
3.
-
nC
-
-
-1.3
VDS=-15V,ID=-4A,VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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ASDM4606S
30V N&P-Channel MOSFET
N- Channel Typical Electrical and Thermal Characteristics (Curves)
ton
Vdd
Vin
Vgs
Rgen
D
tr
td(on)
Rl
toff
Vout
90%
VOUT
G
tf
td(off)
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ID- Drain Current (A)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 4 Transfer Characteristics
Normalized On-Resistance
Rdson On-Resistance(mΩ)
Figure 3 Output Characteristics
ID- Drain Current (A)
Figure 5 Drain-Source On-Resistance
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TJ-Junction Temperature(℃)
Figure 6 Drain-Source On-Resistance
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ASDM4606S
Rdson On-Resistance(mΩ)
C Capacitance (pF)
30V N&P-Channel MOSFET
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure7 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Qg Gate Charge (nC)
Figure 10 Source- Drain Diode Forward
ID- Drain Current (A)
C Capacitance (pF)
Figure 9 Gate Charge
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
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Vds Drain-Source Voltage (V)
Figure 12
Safe Operation Area
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ASDM4606S
r(t),Normalized Effective
Transient Thermal Impedance
30V N&P-Channel MOSFET
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
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ASDM4606S
30V N&P-Channel MOSFET
P-Channel Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
ID- Drain Current (A)
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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ASDM4606S
ID- Drain Current (A)
Normalized On-Resistance
30V N&P-Channel MOSFET
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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ASDM4606S
ID- Drain Current (A)
30V N&P-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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ASDM4606S
30V N&P-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
ASDM4606S
4606
Packing
Quantity
SOP-8
Tape&Reel
4000/Reel
MARKING
PACKAGE
4606
SOP-8
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Package
10/12
Lot Number
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ASDM4606S
30V N&P-Channel MOSFET
SOP-8 PACKAGE IN FORMATION
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ASDM4606S
30V N&P-Channel MOSFET
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