ASDM4100S-R

ASDM4100S 100V N&P-Channel MOSFET Product Summary Features ● N-Channel VDS RDS(on),Typ VGS=10V RDS(on),Typ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ID Application mΩ mΩ 4 A ● P-Channel ● '&'&SULPDU\EULGJH V VDS -100 RDS(on),Typ VGS=-10V 122 mΩ RDS(on),Typ VGS=-4.5V 125 mΩ -3 ID A ● '&'&6\QFKURQRXVUHFWLILFDWLRQ ● +RWVZDS ● )DQGULYH SOP-8 V 100 98 104 top view D1 D1 D2 D2 S1 G1 S2 G2 N-channel P-channel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS N-Channel P-Channel Unit 100 -100 V ±20 ±20 V Gate-Source Voltage VGS Continuous Drain Current ID 4 -3 A Pulsed Drain Current (Note 1) IDM 16 -12 A Maximum Power Dissipation PD 2.5 1.6 W TJ,TSTG -55 To 150 Operating Junction and Storage Temperature Range -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) NOV 2021 Version1.0 1/10 RθJA N-Ch 89 P-Ch 90 www.ascendsemi.com ℃/W 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A - VGS=4.5V, ID=2A VDS=10V, ID=2.5A Typ Max Unit - V - 1 μA - ±100 nA 2.5 V 98 120 mΩ - 104 125 mΩ - 20 - S 723 - PF - 28 - PF - 17 - PF - 3.9 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V,VGS=0V , F=1.0MHz - Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=50V, RL=3Ω - 7.7 - nS td(off) VGS=10V,RGEN=3Ω - 33.8 - nS - 9.1 - nS - 6.2 - nC - 1.25 - nC - 1.7 - nC - - 1.3 V - - 4 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=50V,ID=3.5 A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS NOV 2021 Version1.0 2/10 VGS=0V,IS=1A www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET P-CH Electrical Characteristics (TA=25℃unless otherwise noted)  Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -100 Zero Gate Voltage Drain Current IDSS VDS=-100V , VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-2.5A - 122 146 mΩ VGS=-4.5V, ID=-2.0A - 125 150 mΩ VGS=-5V, ID=-2.5A 12 - - S - 1774 - PF - 338 - PF - 203 - PF - 8 - nS On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-25V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-25V,RL=3.6Ω - 4 - nS td(off) VGS=-10V,RGEN=3Ω - 27 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 12.5 - nS Total Gate Charge Qg - 13 - nC Gate-Source Charge Qgs - 3.2 - nC Gate-Drain Charge Qgd - 4 - nC - - VDS=-50V,ID=-2.5A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -1.3 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2021 Version1.0 3/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET Typical Characteristics:N-channel NOV 2021 Version1.0 4/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET Typical Characteristics:N-channel NOV 2021 Version1.0 5/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET Typical Characteristics:P-channel NOV 2021 Version1.0 6/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET Typical Characteristics:P-channel NOV 2021 Version1.0 7/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM4100S-R Package Packing Quantity 4100 SOP-8 Tape&Reel 4000/ Reel MARKING PACKAGE SOP-8 NOV 2021 Version1.0 Marking 4100 8/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET SOP-8 PACKAGE IN FORMATION NOV 2021 Version1.0 9/10 www.ascendsemi.com 0755-86970486 ASDM4100S 100V N&P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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