ASDM60DN30Q-R

ASDM60DN30Q 60V Dual N-Channel MOSFET Features ● ● Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating $SSOLFDWLRQV ● ● Product Summary VDS 60 V RDS(on),typ.@VGS=10V 14 mΩ ID 30 A DC/DC Converter Ideal for high-frequency switching and synchronous rectification Dual N-Channel DFN5*6-8 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 30 A ID (100℃) 23.2 A Pulsed Drain Current IDM 120 A Maximum Power Dissipation PD 40 W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Unit 0.32 W/℃ EAS 135 mJ TJ,TSTG -55 To 150 ℃ RθJC 3.13 ℃/W RθJA 62 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) Thermal Resistance,Junction-to-Ambient NOV 2021 Version1.0 1/7 (Note1) www.ascendsemi.com 0755-86970486 ASDM60DN30Q 60V Dual N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 1.8 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5A - 14 16 mΩ VGS=4.5V, ID=5A - 21 24 mΩ 40 - S - 589 - PF - 107 - PF - 5.8 - PF - 11 - nS Off Characteristics On Characteristics V (Note 3) Forward Transconductance Dynamic Characteristics gFS VDS=5V,ID=15A (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=30V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=15A - 17 - nS td(off) VGS=10V,RG=1.6Ω - 18 - nS - 4 - nS - 21.8 - nC - 4.6 nC - 3.5 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=15A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current VSD (Note 2) VGS=0V,IS=15A IS Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25°C, IF = IS di/dt = 100A/μs (Note3) - 1.2 V - - 30 A - 30 - nS - 36 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM60DN30Q 60V Dual N-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Performance Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) VDS=5V Vgs Gate-Source Voltage (V) ID=15A Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) VDS=30V Qg Gate Charge (nC) Figure 2 Transfer Characteristics VGS=4.5V VGS=10V ID- Drain Current (A) Figure 3 Rdson- Drain Current NOV 2021 Version1.0 VGS=10V 3/7 Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM60DN30Q Capacitance (pF) Power Dissipation (W) 60V Dual N-Channel MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM60DN30Q 60V Dual N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM60DN30Q-R 60DN30 DFN5*6-8 PACKAGE Quantity Tape&Reel 4000/Reel MARKING 60DN30 DFN5*6-8 NOV 2021 Version1.0 Packing 5/7 www.ascendsemi.com 0755-86970486 ASDM60DN30Q 60V Dual N-Channel MOSFET Dual DFN5x6-8 Package Outline Data DIMENSIONS ( unit : mm ) Symbol Notes: Min Typ Max A 0.9 1 1.1 b 0.33 0.41 0.51 protrusions or gate burrs. C 0.2 0.25 0.3 3. Dimensions "D1" and "E1" include interterminal flash or D1 4.8 4.9 5 protrusion. Interterminal flash or protrusion shall not exceed D2 3.61 3.81 3.96 E 5.9 6 6.1 E1 5.7 5.75 5.8 E2 3.38 3.58 3.78 1. Refer to JEDEC MO-240 variation AA. 2. Dimensions "D1" and "E1" do NOT include mold flash 0.25mm per side. 1.27 BSC e H 0.41 0.51 0.61 K 1.1 -- -- L 0.51 0.61 0.71 L1 0.06 0.13 0.2 M 0.5 -- -- α 0° -- 12° NOV 2021 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM60DN30Q 60V Dual N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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