ASDM40P55KQ-R

ASDM40P55KQ -40V P-Channel MOSFET General Features ● ● 100% avalanche tested Pb-free lead plating; RoHS compliant Product Summary Application ● ● ● Load Switch DC-DC converter Power management V DS -40 V R DS(on),TYP@ VGS=-10 V 13.5 mΩ ID -55 A D G S TO-252 P-channel Table 1. Absolute Maximum Ratings (T A=25℃) Parameter Symbol Test Condition Value Unit ID TC=25℃ -55 A Drain to Source Voltage VDS - -40 V Gate to Source Voltage VGS - ±20 V Pulsed Drain Current IDM - -220 A Avalanche Energy, Single Pulse EAS 150 mJ Power Dissipation PD TC=25℃ 42 W TJ, Tstg - -55 to 150 ℃ Continuous drain current (Silicon Limited) Operating and Storage Temperature NOV 2021 Version1.0 1/7 VDS=-20V,VGS=-10V,L=0.5mH,Rg =25Ω www.ascendsemi.com 0755-86970486 ASDM40P55KQ -40V P-Channel MOSFET Electrical Characteristics at Tj=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current Test Condition VGS=0V, ID=250µA VGS=VDS, ID=250µA Value Min. Typ. -40 - -1.0 -1.7 -2.5 -0.01 -1 - -100 VGS=0V, VDS=-40V, Tj=25℃ IDSS - VGS=0V, VDS=-40V, Tj=100℃ Gate to Source Leakage Current IGSS Drain to Source on Resistance RDS(on) Gate Resistance RG Unit Max. V V µA VGS=±20V, VDS=0V - 10 ±100 VGS=-10V, ID=-20A - 13.5 16 VGS=-4.5V, ID=-15A - 18.6 22 VGS=0V, VDS=0V, f=1MHz - 6.5 - nA mΩ Ω Dynamic Characteristics Parameter Symbol Test Condition Unit Value Min. Typ. Max. - 1803 - - 225 - Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 130 - Total Gate Charge Qg - 58 - Gate-Source Charge Qgs - 7 - Gate-Drain Charge Qgd - 10 - Turn on delay time td(on) Rise time tr Turn off delay time td(off) VGS=0V, VDS=-30V, f=1MHz VGS=-4.5V, VDS=-20V, ID=-30A nC 10 VGS=-10V, VDD=-20V, 24 ID=-15A,RGEN=6.3 ns 40 9 tf Fall time pF Diode Characteristics Parameter Diode Forward Voltage NOV 2021 Version1.0 2/7 Symbol Test Condition VSD VGS=0V,IS=-20A Unit Value Min. Typ. Max. - -0.92 -1.2 www.ascendsemi.com V 0755-86970486 ASDM40P55KQ -40V P-Channel MOSFET Typical Performance Characteristics Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics Figure 5: Gate Charge Characteristics NOV 2021 Version1.0 3/7 Figure 6: Capacitance Characteristics www.ascendsemi.com 0755-86970486 ASDM40P55KQ -40V P-Channel MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 9: Maximum Safe Operating Area Figure 8: Normalized on Resistance vs. Junction Temperature Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to- Case NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM40P55KQ -40V P-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM40P55KQ-R Marking Package Packing Quantity 40P55KQ TO-252 Tape&Reel 2500/Reel PACKAGE MARKING TO-252 NOV 2021 Version1.0 40P55 5/7 www.ascendsemi.com 0755-86970486 ASDM40P55KQ -40V P-Channel MOSFET TO-252 Package Information D1 L3 2 c L E D3 h 1 L2 L4 L1 D2 b e MILLIMETER D MIN Typ. MAX A 2.200 2.300 2.400 A1 0.000 b 0.640 0.690 0.740 0.460 0.520 0.580 6.500 6.600 6.700 A D D1 5.334 REF D2 4.826 REF D3 3.166 REF E 6.000 A1 6.200 h 0.000 0.100 0.200 L 9.900 10.100 10.300 2.888 REF L1 L2 1.400 L4 1.550 1.700 1.600 REF L3 6/7 6.100 2.286 TYP e NOV 2021 Version1.0 0.127 0.600 0.800 1.000 1.100 1.200 1.300 www.ascendsemi.com 0755-86970486 ASDM40P55KQ -40V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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