ASDM40N40E-R

ASDM40N40E 40V N-Channel MOSFET Product Summary General Features ● Low On-Resistance 100% avalanche tested ● Fast Switching Speed ● Excellent package for good heat dissipation ● V DS 40 V R DS(on),Typ@ VGS=10 V 6.0 mΩ ID 40 A Application ● DC/DC Converters ● On board power for server ● Synchronous rectification DFN3.3*3.3-8 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 40 A TC = 100℃ 32 A 160 A 50 mJ 65 W 1.92 ℃/W -55 to +150 ℃ ID Continuous Drain Current note1 IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy PD RθJC TJ, TSTG Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range DEC 2018 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition LIMITS Min. Typ. Max. 40 --- --- VDS=40V, VGS=0V --- --- 1 TJ =125°C --- --- 30 Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ① RDS(ON) V µA Gate Threshold Voltage VDS=VGS, IDS=250µA 1.1 1.6 2.4 V Gate Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA VGS=4.5V, IDS=20A --- 7.5 12 mΩ VGS=10V, IDS=30A --- 6.0 8.5 mΩ ISD=20A, VGS=0V --- --- 1.2 V --- 14 --- ns --- 32 --- nC Ω Drain-Source On-state Resistance Diode Characteristics VSD ① Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A, dlSD/dt=100A/µs ② Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz --- 1.2 --- Ciss Input Capacitance --- 1733 --- Coss Output Capacitance --- 283 --- Crss VGS=0V, VDS=20V, Frequency=1.0MHz Reverse Transfer Capacitance --- 141 --- td(ON) Turn-on Delay Time --- 6 --- tr Turn-on Rise Time --- 10 --- --- 24 --- --- 5 --- --- 18 23 --- 2.5 --- --- 5 --- td(OFF) tf Turn-off Delay Time VDD=20V,IDS=20A, VGEN=10V,RG=4.7Ω Turn-off Fall Time pF ns ② Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=32V, VGS=10V, IDS=20A nC Notes: ①Pulse test;Pulse width≤300µs, duty cycle≤2%. ②Guaranteed by design, not subject to production testing. DEC 2018 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms DEC 2018 Version1.0 3/8 www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET Typical Electrical and Thermal Characteristics (Curves) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) 10 VGS=4.5V 8 6 VGS=10V 4 2 0 0 20 40 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=3.5mΩ 10 TJ=150°C -25 0 25 50 75 100 125 0.1 0.2 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz Ciss 1500 1000 Coss Crss 0 1 1 1.2 1.4 10 VDS=24V IDS=20A 9 8 7 6 5 4 3 2 1 0 10 VDS - Drain-Source Voltage (V) DEC 2018 Version1.0 0.8 Gate Charge 2500 500 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 2000 TJ=25°C 1 0.0 -50 100 Source-Drain Diode Forward 100 VGS=10V IDS=20A 0.5 80 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 60 4/8 100 0 10 20 30 QG - Gate Charge (nC) www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET Power Dissipation 70 Drain Current ID - Drain Current (A) PD - Power (W) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) RDS(ON) limited 100 10 RDS(ON) - On - Resistance (mΩ) Safe Operation Area 1000 ID - Drain Current (A) TJ - Junction Temperature (°C) 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 10 100 Drain Current 10 Ids=26A 8 6 4 2 0 0 1000 1 2 3 7 8 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=1.92°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) DEC 2018 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM40N40E-R 40N40 DFN3.3*3.3-8 Quantity Tape&Reel 5000/Reel MARKING PACKAGE DFN3.3x3.3-8 DEC 2018 Version1.0 Packing 6/8 40N40 www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET Dimensions(DFN3.3×3.3-8) DEC 2018 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM40N40E 40V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version1.0 8/8 www.ascendsemi.com 0755-86970486