ASDM40P90AKQ-R

ASDM40P90AKQ -40V P-Channel MOSFET Features • Super Low Gate Charge • 100% EAS Guaranteed • Green Device Available V DS • • Excellent CdV/dt effect decline Advanced high cell density Trench technology R Product Summary I DS(on),Typ @ VGS=-10 V D -40 V 5.2 mΩ -90 A Application • Provides excellent RDSON for most synchronizations • Application of gate charge Buck converter 1 TO-252 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） -40 V VGS Gate-Source Voltage (VDS=0V) ±20 V ID (DC) Drain Current-Continuous -90 A Drain Current-Continuous@ Current-Pulsed -339 A 58 W -55 To 175 ℃ IDM (pluse) PD Maximum Power Dissipation TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter Max Unit R JC Thermal Resistance,Junction-to-Case 2.3 ℃ /W R JA Thermal Resistance,Junction-ambient 62 ℃ /W NOV 2021 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM40P90AKQ -40V P-Channel MOSFET Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA -40 IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=-40V,VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA -1.5 -2.5 V VGS=-4.5V, ID=-15A 6.6 8 RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-20A 5.2 6.5 On/Off States -1.0 V mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance 5530 PF 454 PF 287 PF 16 nS ID=-1A 17 nS VGS =-10V 68 nS 31 nS VDS=-20V,VGS=0V f=1.0MHz Crss Reverse Transfer Capacitance Switching Times td(on) Turn-on Delay Time VDS=-20V tr Turn-on Rise Time td(off) Turn-Off Delay Time RL =1.6Ω tf Turn-Off Fall Time Qg Total Gate Charge VDS=-20V 118 nC Qgs Gate-Source Charge VGS=-10V 13 nC Qgd Gate-Drain Charge 22 nC -90 A -1.2 V ID=-8.0A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward On Voltage ton Forward Turn-on Time ISD=-8A,VGS=0V, Intrinsic turn-on time is negligible(turn-on is dominated Notes: 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width≦300us , duty cycle≦2% 3.The power dissipation is limited by 175℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM40P90AKQ -40V P-Channel MOSFET Typical Characteristics NOV 2021 Version1.0 3/7 www.ascendsemi.com 0755-86970486 ASDM40P90AKQ -40V P-Channel MOSFET NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM40P90AKQ -40V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM40P90AKQ-R 40P90A TO-252 PACKAGE Tape&Reel Quantity 2500/Reel MARKING 40P90A TO-252 NOV 2021 Version1.0 Packing 5/7 www.ascendsemi.com 0755-86970486 ASDM40P90AKQ -40V P-Channel MOSFET TO-252 D1 2 c L E D3 L3 h 1 L2 L4 L1 D2 b e SYMBOL MIN Typ. MAX A 2.200 2.300 2.400 A1 0.000 b 0.640 0.690 0.740 0.460 0.520 0.580 6.500 6.600 6.700 D D A MILLIMETER D1 5.334 REF D2 4.826 REF 3.166 REF D3 E 6.000 A1 h 0.000 L 9.900 1.400 6/7 0.100 0.200 10.100 10.300 1.550 1.700 1.600 REF L3 L4 6.200 2.888 REF L1 L2 6.100 2.286 TYP e NOV 2021 Version1.0 0.127 0.600 0.800 1.000 1.100 1.200 1.300 www.ascendsemi.com 0755-86970486 ASDM40P90AKQ -40V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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