ASDM40R032NQ
40V N-Channel MOSFET
Product Summary
Feature
⚫
⚫
⚫
⚫
⚫
Split Gate Trench Technology
Low RDS(ON)
Low Gate Charge
Low Gate Resistance
100% UIS Tested
V
DS
R
DS(on),Typ
I
@ VGS=10 V
D
40
V
3.8
mΩ
85
A
Application
⚫
Power Switching Application
DFN5*6-8
N-Channel
ABSOLUTE MAXIMUM RATINGS (TA = 25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain - Source Voltage
VDS
40
V
Gate - Source Voltage
VGS
±20
V
Continuous Drain Current1
TC = 25℃
ID
85
A
Continuous Drain Current1
TC = 100℃
ID
67
A
IDM
340
A
Single Pulsed Avalanche
Current3
IAS
31
A
Single Pulsed Avalanche
Energy3
EAS
240
mJ
PD
83
W
Thermal Resistance from Junction to Ambient6
RθJA
62
℃/W
Thermal Resistance from Junction to Case
RθJC
2.4
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ +150
℃
Pulsed Drain
Power
Current2
Dissipation5
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TC = 25℃
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Ascend Semicondutor Co.,Ltd
ASDM40R032NQ
40V N-Channel MOSFET
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Off Characteristics
Drain - Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 40V, VGS = 0V
1
µA
Gate - Body Leakage Current
IGSS
VGS = ±20V, VDS = 0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.7
2.5
V
Drain-source On-resistance
RDS(on)
VGS = 10V, ID = 10A
3.8
4.5
VGS = 4.5V, ID = 10A
5.5
6.0
Forward Transconductance
gFS
VDS = 10V, ID = 10A
21
On
40
V
Characteristics4
1.0
mΩ
S
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
1560
VDS = 20V, VGS = 0V, f = 1MHz
565
pF
38
VDS = 0V, VGS = 0V, f = 1MHz
3
Ω
Switching Characteristics
Total Gate Charge
Qg
Gate-source Charge
Qgs
Gate-drain Charge
Qgd
3.8
Turn-on Delay Time
td(on)
7
Turn-on Rise Time
tr
Turn-off Delay Ttime
Turn-off Fall Time
td(off)
31
VDS = 20V, VGS = 10V, ID = 20A
6
VDD = 20V, VGS = 10V, RL = 1Ω
2.8
RG = 3Ω
24
tf
nC
ns
3.9
Source - Drain Diode Characteristics
Diode Forward Voltage4
VSD
VGS = 0V, IS = 10A
1.2
Notes :
1.The maximum current rating is limited by package.And device mounted on a large heatsink
2.Pulse Test : Pulse Width ≤ 10μs, duty cycle ≤ 1%.
3.EAS condition: VDD = 20V,VGS = 10V, L = 0.5mH, RG = 25Ω Starting TJ = 25°℃.
4.Pulse Test : Pulse Width ≤ 300μs, duty cycle ≤ 2%.
5.The power dissipation PD is limited by TJ(MAX) = 150°C.And device mounted on a large heatsink
6.Device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
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V
ASDM40R032NQ
40V N-Channel MOSFET
Output Characteristics
21
Transfer Characteristics
8
VDS=1V
Pulsed
VGS=2.7V
VGS=10V, 4.5V
18
VGS=2.8V
6
15
ID(A)
ID(A)
VGS=2.6V
12
4
9
TA=125℃
VGS=2.5V
6
2
TA=25℃
3
TA=25℃
Pulsed
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
3.5
1.0
1.5
VDS(V)
2.0
2.5
3.0
VGS(V)
RDS(ON) vs VGS
RDS(ON) vs ID
20
6.0
Pulsed
ID=10A
TA=25℃
Pulsed
VGS=4.5V
5.0
RDSON(mR)
RDS(ON)(mR)
15
4.0
VGS=10V
10
3.0
TA=125℃
5
2.0
TA=25℃
0
1.0
0
4
8
12
16
2
20
4
ID(A)
IS vs VSD
6
VGS(V)
8
10
100
125
Threshold Voltage
2.5
20
10
2.0
1
VTH(V)
IS(A)
TA=125℃
TA=25℃
ID=250uA
1.5
0.1
1.0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
VDS(V)
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0.5
25
50
75
TJ(℃ )
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Ascend Semicondutor Co.,Ltd
ASDM40R032NQ
40V N-Channel MOSFET
Capacitance vs VDS
2500
f=1Mhz
Pulse
2000
1000
Maximum Forward Biased Safe Operating Area
TC=25℃ Single Pulse RθJC=1.5℃ /W
100
1500
100uS
DC
10
ID(A)
Capacitance(pF)
10uS
1mS
10mS
1000
1
500
0.1
0
0
5
10
15
20
VDS(V)
25
30
35
40
0.01
0.01
0.1
1
VDS(V)
10
100
Normalized Maximum Transient Thermal Impedance
10
TJ,PK=TC+PDM×ZθJC×RθJC
RθJC=1.5℃ /W
Duty Ratio=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,single pulse
1
ZθJC
Duty Ratio=0.5
0.1
Single Pluse
0.01
1E-5
1E-4
0.001
0.01
0.1
1
10
100
Pluse Width(s)
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ASDM40R032NQ
40V N-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
Package
Packing
Quantity
ASDM40R032NQ-R
40R032N
DFN5*6-8
Tape&Reel
4000/Reel
MARKING
PACKAGE
DFN5*6-8
NOV 2018 Version1.0
40R032N
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Ascend Semicondutor Co.,Ltd
ASDM40R032NQ
40V N-Channel MOSFET
DFN5x6_P, 8 Leads
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Ascend Semicondutor Co.,Ltd
ASDM40R032NQ
40V N-Channel MOSFET
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