ASDM40R022NQ-R

ASDM40R022NQ 40V N-Channel MOSFET Features Product Summary  Advanced Split Gate Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application V DS R DS(on),Max I @ VGS=10 V D 40 V 2.2 mΩ 140 A  Load Switch  PWM Application DFN5*6-8 N-Channel Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 140 A TC = 100℃ 91 A 560 A 125 mJ 83 W ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation note2 TC = 25℃ RθJC Thermal Resistance, Junction to Case 1.7 ℃/W RθJA Thermal Resistance, Junction to Ambient 55 ℃/W -55 to +150 ℃ TJ, TSTG Operating and Storage Temperature Range NOV 2020 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 - - V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 - 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=30A - - 2.2 note3 VGS=4.5V, ID=20A - 2.7 4.8 - 3162 - pF - 1099 - pF - 157 - pF - 95 - nC - 15 - nC - 11 - nC - 12.5 - ns - 7 - ns - 50 - ns - 8.5 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=20V, VGS=0V, f=1.0MHz VDS=20V, ID=75A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf V DD=20V, ID=75A, RG=1.6Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 140 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 560 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 31 - ns - 110 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=30A TJ=25℃, IF=IS,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5mH, IAS=22.4A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% NOV 2020 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 200 ID (A) 10V 200 4.5V ID (A) 160 160 4V 120 120 80 VGS=2.5V TJ=125℃ 80 25℃ 40 40 VDS(V) 0 0 1 2 3 4 5 0 0 RDS(ON) (mΩ) 1.0E+01 3.0 125℃ VGS=10V 1.0E-03 1.0 1.0E-04 ID(A) 0.5 0 10 20 30 40 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 0.2 0.4 VSD(V) 0.6 0.8 1.0 Figure 6: Capacitance Characteristics VGS(V) 105 VDS=20V ID=75A C(pF) 104 Ciss 6 103 Coss 102 Crss 4 2 Qg(nC) 0 5.0 TJ=25℃ 1.0E-02 1.5 0 4.0 IS(A) 1.0E-01 VGS=4.5V 2.0 8 VGS(V) 3.0 1.0E+00 2.5 10 2.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 3.5 1.0 20 NOV 2020 Version1.0 40 60 3/8 80 100 VDS(V) 101 0 8 16 24 www.ascendsemi.com 32 40 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature 2.5 1.2 RDS(on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 200 Limited by RDS(on) 103 0.5 -100 ID(A) 150 10μs 120 100μs 1ms 102 90 10ms 101 0.1 1 60 100ms TC=25℃ Single pulse 30 DC VDS (V) 10 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 10-4 NOV 2020 Version1.0 TP(s) 10-3 10-2 4/8 t1 PDM 10-1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC+TC 10-1 100 101 www.ascendsemi.com 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms NOV 2020 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM40R022NQ-R 40R022N DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5*6-8 NOV 2020 Version1.0 40R022N 6/8 www.ascendsemi.com 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET DFN5x6_P, 8 Leads NOV 2020 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM40R022NQ 40V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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