ASDM4614S-R

ASDM4614S 40V N&P-Channel MOSFET Features Product Summary ● High power and current handing capability ● N-Channel BVDSS ● Lead free product is acquired ● Surface mount package 40V Application ID RDSON.Typ@10V 16mΩ 9A ● P-Channel BVDSS ● PWM applications ● Load switch -40V ● Power management ID RDSON.Typ@10V -7A 32mΩ top view ASCEND N-channel SOP-8 P-channel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V ID 9 -7 A Pulsed Drain Current (Note 1) IDM 36 -28 A Maximum Power Dissipation PD 2 2 W TJ,TSTG -55 To 150 -55 To 150 ℃ Continuous Drain Current Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) NOV 2021 Version1.0 1/12 RθJA N-Ch 89 P-Ch 90 www.ascendsemi.com ℃/W 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 Zero Gate Voltage Drain Current IDSS VDS=32V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 Drain-Source On-State Resistance RDS(ON VGS=10V, ID=5A - VGS=4.5V, ID=4A VDS=5V,ID=5A Typ Max Unit - V - 1 μA - ±100 nA 2.5 V 16 19 mΩ - 17.3 20 mΩ - 15 - S - 850 - PF - 150 - PF - 96 - PF - 4.5 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=15V, RL=3Ω - 2.5 - nS td(off) VGS=10V,RGEN=3Ω - 14.5 - nS - 3.5 - nS - 5.2 - nC - 0.85 - nC - 1.3 - nC - - 1.3 V - - 9 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=5A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS NOV 2021 Version1.0 2/12 VGS=0V,IS=3A www.ascendsemi.com 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET P-CH Electrical Characteristics (TA=25℃unless otherwise noted)  Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -40 - V Zero Gate Voltage Drain Current IDSS VDS=-32V , VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-6A - 32 39 mΩ VGS=-4.5V, ID=-3A - 41 50 mΩ VDS=-5V,ID=-4.1A 10 - - S - 980 - PF - 120 - PF - 95 - PF - 9 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,RL=3.6Ω - 5 - nS td(off) VGS=-10V,RGEN=3Ω - 28 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 13.5 - nS Total Gate Charge Qg - 14 - nC Gate-Source Charge Qgs - 3.1 - nC Gate-Drain Charge Qgd - 3 - nC - - -1.3 VDS=-15V,ID=-4A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD V= GS=0V,IS -1A V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2021 Version1.0 3/12 www.ascendsemi.com 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET N- Channel Typical Electrical and Thermal Characteristics (Curves) ton Vdd Vin Vgs Rgen D tr td(on) Rl Vout toff 90% VOUT G S tf td(off) 90% INVERTED 10% 10% 90% VIN 50% 10% 50% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A) ID- Drain Current (A) Figure 1:Switching Test Circuit Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 4 Transfer Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Figure 3 Output Characteristics ID- Drain Current (A) Figure 5 Drain-Source On-Resistance NOV 2021 Version1.0 4/12 TJ-Junction Temperature(℃) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM4616S Rdson On-Resistance(mΩ) C Capacitance (pF) 40V N&P-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure7 Rdson vs Vgs Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 10 Source- Drain Diode Forward ID- Drain Current (A) C Capacitance (pF) Figure 9 Gate Charge Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds NOV 2021 Version1.0 5/12 Vds Drain-Source Voltage (V) Figure 12 Safe Operation Area www.ascendsemi.com 0755-86970486 ASDM4616S r(t),Normalized Effective Transient Thermal Impedance 40V N&P-Channel MOSFET Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 6/12 www.ascendsemi.com 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET P-Channel Typical Electrical and Thermal Characteristics ton tr td(on) td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 10% Figure 1:Switching Test Circuit toff tf 50% PULSE WIDTH PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS NOV 2021 Version1.0 7/12 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM4616S ID- Drain Current (A) Normalized On-Resistance 40V N&P-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge NOV 2021 Version1.0 8/12 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM4616S ID- Drain Current (A) 40V N&P-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 9/12 www.ascendsemi.com 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM4614S-R Marking Package Packing 4614 SOP-8 Tape&Reel Quantity 4000 MARKING PACKAGE 4614 SOP-8 Lot Number Date code NOV 2021 Version1.0 10/12 www.ascendsemi.com 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET SOP-8 PACKAGE IN FORMATION NOV 2021 Version1.0 11/12 www.ascendsemi.com 0755-86970486 ASDM4616S 40V N&P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 12/12 www.ascendsemi.com 0755-86970486