ASDM40N100KQ-R

ASDM40N100KQ 40V N-Channel MOSFET Features • Advanced Trench Process Technology • Low RDS(ON) to Minimize Conduction Losses • • • • Low Qg and Capacitance to Minimize Driver Losses Superior thermal resistance Excellent Gate Charge x RDS(ON) Product (FOM) Fully Characterized Capacitance and Avalanche SOA • Pb-free lead plating; RoHS Compliant • Halogen-free According to IEC61249-2-21 Product Summary V DS R I DS(on),Max @ VGS=10 V D 40 V 2.1 mΩ 100 A 1 TO-252 Absolute Maximum Ratings (TJ = 25°C unless otherwise noted) Symbol Value Unit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V 100 A ID ID Parameter TC = 25°C Drain Current-Continuous TC = 100°C 57 A TC = 25°C 400 A 70 A 245 mJ IDM Drain Current-Pulsed Note A IAS Non-repetitive Avalanche Current Note C, E EAS Single Pulse Drain-to-Source Avalanche Energy Ptot TJ, TSTG Note C, D Maximum Power Dissipation TC = 25°C Operating and Storage Temperature Range IEC climatic category; DIN IEC 68-1: 55/150/56 35.7 W -55 to +150 °C Thermal Resistance Ratings Symbol Parameter RθJA Junction-to-Ambient RθJS Junction-to-Soldering Point Conditions Note B Min. Typ. Steady State - - Steady State - - Max. Unit 62 °C/W 4 °C/W Notes: A. Repetitive rating, pulse width limited by junction temperature TJmax = +150°C. Ratings are based on low frequency and duty cycles to keep initial TJ = +25°C. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJS is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air. C. Limited by TJmax, starting TJ = +25°C, L = 0.1mH, Rg = 50Ω, VGS = 10V. D. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. E. Guaranteed by design. Not subject to product testing. F. Repetitive Avalanche Current Starting TJ = +25°C, L= 0.1mH, IAS = 40A, VGS = 10V, VDD = 25V NOV 2021 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM40N100KQ 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC CHARACTERISTICS Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Min. Typ. Max. Unit VGS = 0V, IDS = 10mA Conditions 40 - - V VDS = 32V, VGS = 0V - - 1 μA VDS = 32V, VGS = 0V, TJ = 125°C - - 100 μA VGS = ±20V, VDS = 0V - - ±100 nA Min. Typ. Max. Unit STATIC CHARACTERISTICS Symbol Parameter Conditions VGS(TH) Gate Threshold Voltage VDS = VGS, IDS = 250μA 1.2 - 2.3 V RDS(ON) Drain-Source On-State Resistance Note A VGS = 10V, IDS = 23A - - 2.1 mΩ RDS(ON) Drain-Source On-State Resistance Note A VGS = 4.5V, IDS = 15A - - 2.6 mΩ Rg Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz - 0.7 - Ω gfs Forward Transconductance VDS = 5V, IDS = 5A - 50 - S Min. Typ. Max. Unit Note E DYNAMIC CHARACTERISTICS Note E Symbol Parameter Conditions Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz - 2940 - pF Coss Output Capacitance VDS = 20V, VGS = 0V, f = 1MHz - 628 - pF Crss Reverse Transfer Capacitance VDS = 20V, VGS = 0V, f = 1MHz - 34 - pF Td(on) Turn-On Delay Time VDS = 20V, VGS = 10V, IDS = 23A, RGEN = 3.3Ω - 18.6 - ns Rise Time VDS = 20V, VGS = 10V, IDS = 23A, RGEN = 3.3Ω - 45.8 - ns Turn-Off Delay Time VDS = 20V, VGS = 10V, IDS = 23A, RGEN = 3.3Ω - 16.6 - ns Fall Time VDS = 20V, VGS = 10V, IDS = 23A, RGEN = 3.3Ω - 7.8 - ns Min. Typ. Max. Unit tr Td(off) tf GATE CHARGE CHARACTERISTICS Note E Symbol Parameter Conditions Qgs Gate to Source Gate Charge VDD = 20V, ID = 23A, VGS = 0 to 10V - 9 - nC Qg(th) Gate charge at threshold VDD = 20V, ID = 23A, VGS = 0 to 10V - 5.9 - nC Qgd Gate to Drain Charge VDD = 20V, ID = 23A, VGS = 0 to 10V - 6.6 - nC QSW Switching charge VDD = 20V, ID = 23A, VGS = 0 to 10V - 9.6 - nC Qg Gate charge total VDD = 20V, ID = 23A, VGS = 0 to 10V - 45.5 - nC Qg Gate charge total VDD = 20V, ID = 23A, VGS = 0 to 4.5V - 21.2 - nC Vpalteau Gate plateau voltage VDD = 20V, ID = 23A, VGS = 0 to 10V - 3.1 - V Qg(sync) Gate charge total, sync. FET (Qg - Qgd) VDS = 0.1V, VGS = 0 to 10V - 38.9 - nC REVERSE DIODE Symbol Min. Typ. Max. Unit IS Diode continuous forward current Parameter TC = 25°C - - 100 A ISM Diode pulse current TC = 25°C - - 400 A VSD Diode Forward Voltage VGS = 0V, IF = 23A - - 1.2 V trr Body Diode Reverse Recovery Time VDD = 20V, IF = 23A, di/dt = 100A/μs - 24.4 - ns Qrr Body Diode Reverse Recovery Charge Note E VDD = 20V, IF = 23A, di/dt = 100A/μs - 16.1 - nC NOV 2021 Version1.0 Conditions Note A Note E 2/8 www.ascendsemi.com 0755-86970486 ASDM40N100KQ 40V N-Channel MOSFET Typical Operating Characteristics Transfer Characteristics 140 VDS = 5V 120 80 60 Tj = 125°C 40 400 Drain Current (A) Drain Current (A) 450 Tj = 25°C 350 300 250 200 150 100 20 50 0 0 0 1 2 3 Gate-Source Voltage (V) 4 0 5 On-Resistance vs. Drain Current and Gate 4 VGS = 4.5V 3 2 VGS = 10V 1 0 0 10 20 30 40 50 60 70 Drain Current (A) 80 9 ID = 23A 8 7 6 Tj = 125°C 5 4 3 2 Tj = 25°C 1 2 2.2 1.75 Gate-Source Threshold Voltage (V) 2.4 1.8 VGS = 4.5V, ID = 15A 1.6 1.4 1.2 1 0.8 0.6 5 On-Resistance vs. Gate-Source Voltage 2 VGS = 10V, ID = 23A 4 0 90 100 On-Resistance vs. Junction Temperature 2 1 2 3 Drain-to-Source Voltage (V) 10 Drain-to-Source on Resistance (mΩ) 5 Drain-to-Source On Resistance (mΩ) TOP VGS=10V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V VGS=2.5V 500 100 Normalized Drain-to-Source On Resistance On-Region Characteristics 550 3 4 5 6 7 8 Gate-to-Source Voltage (V) 9 10 150 175 Gate Threshold Voltage 1.5 1.25 ID = 2.5mA 1 0.75 ID = 250µA 0.5 0.25 0 0 25 50 75 100 125 Junction Temperature (°C) NOV 2021 Version1.0 3/8 150 175 0 25 50 75 100 125 Junction Temperature (°C) www.ascendsemi.com 0755-86970486 ASDM40N100KQ 40V N-Channel MOSFET Typical Operating Characteristics (Cont.) Drain-source breakdown voltage vs. Junction Temperature 1.07 ID = 1mA 1.06 Normalized Breakdown Voltage Body-Diode Characteristics 100 IS, Reverse Drain Current (A) 1.05 1.04 1.03 1.02 1.01 1 0 25 50 75 100 125 Junction Temperature (°C) 150 175 Zero Gate Voltage Drain Current vs. Junction Temperature 100 0.2 0.4 0.6 0.8 1 1.2 Source-to-Drain Voltage (V) Junction Capacitance (pF) 1 0.1 1000 Coss 100 25 50 75 100 125 Junction Temperature (°C) 150 Crss 10 0.01 0 1 175 0 Maximum Forward Biased Safe Operating Area 100uS 10 1mS 10mS TjMAX = 150°C Single Pulse Tc = 25°C DC Gate-to-Source Voltage (V) Drain Current (A) 100 5 10 15 20 25 30 Drain-Source Voltage (V) 35 40 Gate-Charge Characteristics 10 VDS = 20V ID = 23A 9 1 f=1MHz Ciss 10 1.4 Capacitance vs. Drain to Source Voltage 10000 VDS = 40V 1000 Tj=25°C 1 0.99 Drain-Source Leakage Current (uA) Tj=125°C 10 8 7 6 5 4 3 2 1 0 0.1 0.01 0.1 1 10 Drain to Source Voltage (V) NOV 2021 Version1.0 4/8 100 0 10 20 30 40 Total Gate Charge (nC) www.ascendsemi.com 50 0755-86970486 ASDM40N100KQ 40V N-Channel MOSFET Typical Operating Characteristics (Cont.) Transient Thermal Resistance Normalized Transient Thermal Resistance 10 D= Ton/T TJ=TC+PD*ZθJC*RθJC RθJC=3.5°C/W 1 0.1 0.01 Single Pulse 0.001 0.0001 0.000001 10 1 Normalized Transient Thermal Resistance In descending oreder: D=0.9, 0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, 0.002, Single Pulse 0.00001 0.0001 0.001 0.01 Pulse Width (S) D= Ton/T TJ=TA+PD*ZθJA*RθJA RθJA=50°C/W Mount on FR4 PCB with 1inch2 copper PAD 0.1 1 10 In descending oreder: D=0.9, 0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, 0.002, Single Pulse 0.1 0.01 0.001 Single Pulse 0.0001 0.00001 0.000001 0.00001 NOV 2021 Version1.0 0.0001 5/8 0.001 0.01 0.1 1 Pulse Width (S) 10 100 www.ascendsemi.com 1000 0755-86970486 10000 ASDM40N100KQ 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM40N100KQ-R 40N100 TO-252 Tape&Reel 2500/Reel PACKAGE MARKING 40N100 TO-252 NOV 2021 Version1.0 6/8 www.ascendsemi.com 0755-86970486 ASDM40N100KQ 40V N-Channel MOSFET D1 L3 2 c L E D3 h D2 L2 L4 L1 1 b e SYMBOL MILLIMETER MIN Typ. MAX 2.300 2.400 A 2.200 A1 0.000 b 0.640 0.690 0.740 0.460 0.520 0.580 6.600 6.700 D 6.500 D1 D 5.334 REF D2 4.826 REF D3 3.166 REF E 6.000 A A1 6.200 h 0.000 0.100 0.200 L 9.900 10.100 10.300 2.888 REF L1 L2 1.400 1.550 1.700 1.600 REF L3 L4 7/8 6.100 2.286 TYP e NOV 2021 Version1.0 0.127 0.600 0.800 1.000 1.100 1.200 1.300 www.ascendsemi.com 0755-86970486 ASDM40N100KQ 40V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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