ASDM60R042NQ-R

ASDM60R042NQ 60V N-Channel MOSFET General Features ● Advanced Trench MOS Technology ● Low On-Resistance Product Summary 100% avalanche tested ● Fast Switching Speed ● Excellent package for good heat dissipation ● VDS 60 V RDS(on).Typ@ VGS=10 V 4.4 mΩ ID 90 A Application ● DC/DC Converters ● On board power for server ● Synchronous rectification DFN5×6-8 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V 90 A 74 A 360 A 125 mJ 90 A 113 W ID@TC=25℃ Continuous Drain Current1,6 ID@TC=100℃ IDM EAS Pulsed Drain Current2 Single Pulse Avalanche IS Energy3 Avalanche Current Total Power Dissipation4 PD@TC=25℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC DEC 2018 Version1.0 Parameter Typ. Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady Thermal Resistance Junction-case 1 1/8 State) Max. Unit --- 26 ℃/W --- 62 ℃/W --- 1.1 ℃/W www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=20A --- 4.4 5.2 m VGS=4.5V , ID=10A --- 6.4 7.8 m VGS=VDS , ID =250uA 1.2 1.4 2.3 V VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.3 --- Ω Qg Total Gate Charge (10V) --- 33.4 --- Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge --- 5.8 --- Qgd Gate-Drain Charge --- 7.9 --- Td(on) Turn-On Delay Time --- 7.5 --- Tr Td(off) Tf 17.8 VDS=30V , VGS=10V , ID=20A nC Rise Time VDD=30V , VGS=10V , RG=3.3, --- 6 --- Turn-Off Delay Time ID=20A --- 29 --- --- 7.5 --- --- 1625 --- --- 438 --- --- 25 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 116 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current1,5,6 Diode Forward Voltage2 Conditions trr Reverse Recovery Time IF=20A , dI/dt=400A/µs , --- 23 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 60 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. Single pulse width limited by junction temperature TJ(MAX)=150°C. 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=43A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. DEC 2018 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms DEC 2018 Version1.0 3/8 www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ DEC 2018 Version1.0 4/8 www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Td(off) Ton Tf Toff Fig.10 Switching Time Waveform DEC 2018 Version1.0 5/8 VGS Fig.11 Unclamped Inductive Switching Waveform www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60R042NQ-R 60R042N DFN5x6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5x6-8 DEC 2018 Version1.0 60R042N 6/8 www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET Dimensions(DFN5×6-8) DEC 2018 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM60R042NQ 60V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version1.0 8/8 www.ascendsemi.com 0755-86970486