ASDM65S035NX-T

ASDM65S035NX 650V N-Channel Super-Junction MOSFET FEATURES Product Summary  Ultra-fast body diode V DS  Very low FOM RDS(on)×Qg R DS(on),TYP  100% avalanche tested ID  @ VGS=10 V 650 V 37 mΩ 72 A RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Continuous Drain Current TC = 25ºC Symbol Value Unit VDSS 650 V 72 ID TC = 100ºC Pulsed Drain Current A 43.2 (note1) Gate-Source Voltage IDM 288 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 2185 mJ Repetitive Avalanche Energy (note2) EAR 3.31 mJ IAR 13.7 A Avalanche Current MOSFET dv/dt ruggedness, VDS = 0...480V dv/dt 50 V/ns Power Dissipation PD 500 W Continuous Body Diode Current IS 61 A Pulsed Diode Forward Current (note1) ISM 216 Reverse diode dv/dt (note3) dv/dt 50 V/ns Maximum diode commutation speed (note3) dif/dt 900 A/us TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.25 Thermal Resistance, Junction-to-Ambient RthJA 62 Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W NOV 2020 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM65S035NX 650V N-Channel Super-Junction MOSFET Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 650 -- -- VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 10 VDS = 650V, VGS = 0V, TJ = 150ºC -- -- 10000 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3 3.9 5 V Drain-Source On-Resistance R DS(on) VGS = 10V, ID = 36A -- 37 40 mΩ f = 1.0MHz open drain -- 0.3 -- Ω -- 9600 -- -- 271 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Gate resistance RG V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 16.2 -- Total Gate Charge Qg -- 165 -- Gate-Source Charge Qgs -- 50 -- Gate-Drain Charge Qgd -- 70 -- Turn-on Delay Time td(on) -- 103 -- Turn-on Rise Time tr -- 83 -- Turn-off Delay Time td(off) -- 543 -- -- 93 -- -- 1.0 1.5 V -- 242 -- ns -- 1.45 -- μC -- 12 -- A Turn-off Fall Time VDD = 520V, ID = 50A, VGS = 10V VDD = 400V, ID = 50A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm TJ = 25ºC, ISD = 36A, VGS = 0V VR = 400V, IF = 36A, diF/dt = 100A/μs Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 13.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical R G NOV 2020 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM65S035NX 650V N-Channel Super-Junction MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics Figure 1. Output Characteristics 300 300 20V 10V 8V 7V 6V 5.5V 5V 200 150 VDS = 20V 250 ID, Drain Current (A) ID, Drain Current (A) 250 TJ = 25ºC 200 150 100 100 50 TJ = 150ºC 50 0 0 5 10 15 0 20 0 2 6 8 10 Figure 4. Capacitance Figure 3. On-Resistance vs. Drain Current 0.06 105 VGS = 0 f = 1MHz VGS = 10V TJ = 25ºC Ciss 0.05 104 Capacitance (pF) RDS(on), On-Resistance (Ω) 4 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 0.04 0.03 103 Coss 102 Crss 101 0.02 0 10 20 30 40 50 0 60 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) Figure 6. Body Diode Forward Voltage Figure 5. Gate Charge 12 102 10 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 100 VDD = 120V 8 VDD = 520V 6 4 TJ = 125ºC 101 TJ = 25ºC 100 2 10-1 0 0 50 100 150 Qg, Total Gate Charge (nC) NOV 2020 Version1.0 3/8 200 0 0.5 1 1.5 VSD, Source-to-Drain Voltage (V) www.ascendsemi.com 0755-86970486 2 ASDM65S035NX 650V N-Channel Super-Junction MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Breakdown voltage vs. Junction Temperature 1.3 3 RDS(on), (Normalized) VBR(DSS), (Normalized) VGS = 10V ID = 36A 2.5 2 1.5 1 0.5 ID = 250µA 1.2 1.1 1 0.9 0.8 0 -50 0 50 100 -30 150 60 90 120 150 Figure 10. Safe operation area for Figure9 . Transient Thermal Impedance for 103 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 ID, Drain Current(A) 100 ZthJC, Thermal Impedance (ºC/W) 30 TJ, Junction Temperature (ºC) TJ, Junction Temperature (ºC) 10-3 10-5 0 102 101 100 tp = 1us tp = 10us tp = 100us tp = 1ms tp = 10ms DC 10-1 10-2 10-4 10-3 10-2 Tp, Pulse Width (s) NOV 2020 Version1.0 4/8 10-1 100 100 101 102 VDS, Drain-Source Voltage(V) www.ascendsemi.com 103 0755-86970486 ASDM65S035NX 650V N-Channel Super-Junction MOSFET Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform NOV 2020 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM65S035NX 650V N-Channel Super-Junction MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM65S035NX-T 65S035N TO-247 Tube 30/Tube MARKING PACKAGE TO-247 NOV 2020 Version1.0 65S035N 6/8 www.ascendsemi.com 0755-86970486 ASDM65S035NX 650V N-Channel Super-Junction MOSFET TO-247 Unit:mm Unit:mm Symbol Min. Nom Max. Symbol Min. Nom. Max. A 4.80 5.00 5.20 E 15.50 15.80 16.10 A1 2.21 2.41 2.61 E1 13.00 13.30 13.60 A2 1.85 2.00 2.15 E2 4.80 5.00 5.20 b 1.11 1.21 1.36 E3 2.30 2.50 2.70 b2 1.91 2.01 2.21 e b4 2.91 3.01 3.21 L 19.62 19.92 20.22 c 0.51 0.61 0.75 L1 - - 4.30 D 20.70 21.00 21.30 ФP 3.40 3.60 3.80 D1 16.25 16.55 16.85 ФP1 - - 7.30 S NOV 2020 Version1.0 7/8 5.44BSC 6.15BSC www.ascendsemi.com 0755-86970486 ASDM65S035NX 650V N-Channel Super-Junction MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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