ASDM3407ZB-R

ASDM3407ZB -30V P-Channel MOSFET General Description Product Summary ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Applications V DS -30 V R DS(on),Typ@ VGS=-10 V 40 mΩ -4.1 A ID ● Battery protection ● Load switch ● Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ @ Steady State ID TA=70℃ @ Steady State -4.1 -3.2 Unit A Pulsed Drain Current A IDM -15 A Total Power Dissipation @ TA=25℃ PD 1.5 W RθJA 82 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM3407ZB -30V P-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 --- --- V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ --- --- -1 μA --- --- ±100 nA V Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current IGSS VGS= ±20V, VDS=0 VGS(th) VDS= VGS, ID=-250μA -1.0 -1.5 -2.4 VGS= -10V, ID=-4.1A --- 40 55 VGS= -4.5V, ID=-3.5A --- 53 68 IS=-4.1A,VGS=0V --- -0.8 -1.2 V --- --- -4.1 A --- 580 --- --- 98 --- mΩ RDS(ON) VSD IS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss --- 74 --- Total Gate Charge Qg --- 6.8 --- Gate Source Charge Qgs --- 1.0 --- Gate Drain Charge Qgd --- 1.4 --- Turn-on Delay Time tD(on) --- 14 --- Turn-on Rise Time tr --- 61 --- tD(off) --- 19 --- tf --- 10 --- VDS=-15V,VGS=0V,f=1MHZ pF Switching Parameters VGS=-10V,VDS=-15V,ID=-4.1A VGS=-10V,VDD=-15V, RL=15Ω,ID=-1A, RGEN=2.5Ω Turn-off Delay Time Turn-off Fall Time A. B. nC ns Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM3407ZB -30V P-Channel MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance NOV 2018 Version1.0 Figure6. Drain-Source on Resistance 3/7 Ascend Semicondutor Co.,Ltd ASDM3407ZB -30V P-Channel MOSFET Figure7. Safe Operation Area NOV 2018 Version1.0 Figure8. Switching wave 4/7 Ascend Semicondutor Co.,Ltd ASDM3407ZB -30V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM3407ZB-R 3407 SOT23-3 Tape&Reel 3000/Reel MARKING PACKAGE SOT23-3 NOV 2018 Version1.0 3407 5/7 Ascend Semicondutor Co.,Ltd ASDM3407ZB -30V P-Channel MOSFET SOT23-3 Package information SOT23-3 Suggested Pad Layout NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM3407ZB -30V P-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 7/7 Ascend Semicondutor Co.,Ltd