ASDM3400AZA-R

ASDM3400AZA 30V N-Channel MOSFET Features • Very Low On-resistance RDS(ON) • LowCrss • Fast switching • Improved dv/dt capability Product Summary Application I • PWM Application Load • • SwitchPower Management V DS R DS(on),Typ @ VGS=4.5 V D 30 V 21 mΩ 5.6 A D G SOT-23 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS PD R θJA TJ, TSTG TL S TC = 25°C unless otherwise noted Parameter ASDM 3400AZA Units Drain-Source Voltage 30 V Drain Current 5.6 A 3.6 A - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Power Dissipation (TC = 25℃) Thermal Resistance, Junction-to-Ambient Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds NOV 2021 Version1.0 1/9 23 A ±20 1.4 W 70 ℃/W -55 to +150 ℃ 300 ℃ www.ascendsemi.com V 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET Electrical Characteristics Symbol T C= 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 30 -- -- V VDS =30 V, VGS = 0 V -- -- 1 uA IDSS Zero Gate Voltage Drain Current VDS = 30V, TC = 55℃ -- -- 5 uA IGSSF Gate-Body Leakage Current, Forward VGS = 12V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -12 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 uA 0.6 - 1.5 V VGS = 10 V, ID =5.6A -- 19 24 VGS = 4.5 V, ID =5.6A - 21 27 VGS = 2.5 V, ID =3.0A - 27 35 -- 675 - pF -- 50 - pF -- 44 - pF -------- 13 52 25 10 8.6 1.1 2.8 -------- ns ns ns ns nC nC nC On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS=10V, VDS=15V, RG = 3 Ω ,RL = 2.6 Ω VDS = 15 V, ID =5.6A, VGS = 4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 23 A VSD Drain to Source Diode Forward Voltage,V GS = 0V, I SD =5.6A,T J = 25℃ -- 0.85 1.2 V Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% NOV 2021 Version1.0 2/9 www.ascendsemi.com 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET N- Channel Typical Characteristics TC=25℃ impulse=250uS I D - Drain Current (A) VGS 10v 4.5v 3 v 2.5v Bottom: 1.5v ID - Drain Current (A) Top: Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Note：TJ=25℃ VGS=4.5V VGS=10V IF Forward Current (A) Rdson On-Resistance(mΩ) 25℃ I D - Drain Current (A) V F ,Forward Voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Vgs Gate-Source Voltage (V) Capacitance [pF] VDS Drain-to-Source Voltage (V) Figure 5. Capacitance Characteristics NOV 2021 Version1.0 3/9 25℃ Note: VDS=4.5V, ID=5.6A Qg Gate Charge (nC) Figure 6. Gate Charge Characteristics www.ascendsemi.com 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET (Continued) RDS(ON),(Normalized) mΩ Drain-Source On Resistance Voltage(Normalized) -BVDSS Drain-Source Breakdown N- Channel Typical Characteristics 25℃ Vgs Gate-Voltage (V) 25℃ Vgs Gate-Voltage (V) Figure 8. On-Resistance Variation vs Gate Voltage Figure 7. Breakdown Voltage Variation vs Gate-Voltage 0.01ms 0.1ms 1ms 10ms DC Note: TC=25℃, TJ=150℃,Single pulse Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 9. Maximum Safe Operating Area ID - Drain Current (A) I D - Drain Current (A) Limited by RDS(on) T J -Junction Temperature(℃) Figure 10. Maximum PContinuous Drain Currentvs Case Temperature In descending order D=0.5，0.3，0.1，0.05，0.02 Tj-TC=PDM*Zθjc(t) Duty Factor: D=t1/t2 Square Wave Pluse Duration(sec) Figure 11. Transient Thermal Response Curve NOV 2021 Version1.0 4/9 www.ascendsemi.com 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Current Regulator 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA R1 R2 Charge Current Sampling (IG) Current Sampling (ID) Resistor Resistor Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms LL EAS = VDS Vary tp to obtain required peak ID ID 1 ---- LL IAS2 2 BVDSS IAS RG C VDD ID (t) DUT VDS (t) VDD 10V tp NOV 2021 Version1.0 tp 5/9 www.ascendsemi.com Time 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS -IS L Driver VGS Same Type as DUT RG VDD dv/dtcontrolled controlledby by밨 RG ••dv/dt G controlled pulse period ••IISSD controlled byby Duty Factor 밆? VGS Gate Pulse Width D = -------------------------Gate Pulse Period VGS ( Driver ) 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop NOV 2021 Version1.0 6/9 www.ascendsemi.com 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM3400AZA-R 3400A SOT-23 Tape&Reel 3000/Reel MARKING PACKAGE SOT-23 NOV 2021 Version1.0 3400A 7/9 Lot Number www.ascendsemi.com 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET NOV 2021 Version1.0 8/9 www.ascendsemi.com 0755-86970486 ASDM3400AZA 30V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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