ASDM40P100Q
-40V P-Channel MOSFET
Features
Product Summary
High switching speed
Improved dv/dt capability
BVDSS
-40
V
Low gate charge
RDS(on)Typ.@VGS=-10V
6.5
mΩ
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
-100
A
Green molding compound as per IEC 61249 standard
ID
Top View
DFN5*6-8
P-Channel
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
+20
TC=25oC
Continuous Drain Current
Pulsed Drain Current
(Note 4)
TC=100oC
(Note 1)
Power Dissipation
TC
=25oC
TC
=25oC
TC
=100oC
Single Pulse Avalanche Energy (Note 6)
DEC 2018 Version1.0
1/7
V
-100
ID
IDM
PD
-53
A
-400
69.4
27.8
W
EAS
245
mJ
TJ,TSTG
-55~150
oC
Junction to Case
RθJC
1.8
Junction to Ambient
RθJA
62.5
Operating Junction and Storage Temperature Range
Typical Thermal Resistance (Note 4,5)
UNITS
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ASDM40P100Q
-40V P-Channel MOSFET
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-40
-
-
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-2
-3.0
-4
Drain-Source On-State Resistance
RDS(on)
VGS=-10V, ID=-20A
-
6.5
7.0
mΩ
Zero Gate Voltage Drain Current
IDSS
VDS=-40V, VGS=0V
-
-
-1
uA
Gate-Source Leakage Current
IGSS
VGS=+20V, VDS=0V
-
-
+100
nA
-
128
-
-
14.4
-
-
28.9
-
-
7040
-
-
610
-
-
326
-
-
3.7
-
-
12
-
-
18.6
-
-
241
-
-
91
-
-
-
-100
A
-
-0.66
-1
V
Dynamic
V
(Note 6)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
VDS=-32V, ID=-10A,
VGS=-10V (Note 2,3)
VDS=-25V, VGS=0V,
f=1MHZ
f=1MHZ
VDS=-32V, ID=-1A,
VGS=-10V, RG=6Ω
(Note 2,3)
tf
nC
pF
Ω
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=-1A, VGS=0V
NOTES :
1. Pulse width
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