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ASDM40P100Q-R

ASDM40P100Q-R

  • 厂商:

    ASDSEMI(安森德)

  • 封装:

    DFN8_5X6MM

  • 描述:

    MOSFETs P-沟道 40V 100A 6.5mΩ@10V 69.4W DFN8_5X6MM

  • 数据手册
  • 价格&库存
ASDM40P100Q-R 数据手册
ASDM40P100Q -40V P-Channel MOSFET Features Product Summary  High switching speed  Improved dv/dt capability BVDSS -40 V  Low gate charge RDS(on)Typ.@VGS=-10V 6.5 mΩ  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2.0 -100 A  Green molding compound as per IEC 61249 standard ID Top View DFN5*6-8 P-Channel Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -40 Gate-Source Voltage VGS +20 TC=25oC Continuous Drain Current Pulsed Drain Current (Note 4) TC=100oC (Note 1) Power Dissipation TC =25oC TC =25oC TC =100oC Single Pulse Avalanche Energy (Note 6) DEC 2018 Version1.0 1/7 V -100 ID IDM PD -53 A -400 69.4 27.8 W EAS 245 mJ TJ,TSTG -55~150 oC Junction to Case RθJC 1.8 Junction to Ambient RθJA 62.5 Operating Junction and Storage Temperature Range Typical Thermal Resistance (Note 4,5) UNITS www.ascendsemi.com oC/W 0755-86970486 ASDM40P100Q -40V P-Channel MOSFET Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -40 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -2 -3.0 -4 Drain-Source On-State Resistance RDS(on) VGS=-10V, ID=-20A - 6.5 7.0 mΩ Zero Gate Voltage Drain Current IDSS VDS=-40V, VGS=0V - - -1 uA Gate-Source Leakage Current IGSS VGS=+20V, VDS=0V - - +100 nA - 128 - - 14.4 - - 28.9 - - 7040 - - 610 - - 326 - - 3.7 - - 12 - - 18.6 - - 241 - - 91 - - - -100 A - -0.66 -1 V Dynamic V (Note 6) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VDS=-32V, ID=-10A, VGS=-10V (Note 2,3) VDS=-25V, VGS=0V, f=1MHZ f=1MHZ VDS=-32V, ID=-1A, VGS=-10V, RG=6Ω (Note 2,3) tf nC pF Ω ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=-1A, VGS=0V NOTES : 1. Pulse width
ASDM40P100Q-R 价格&库存

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ASDM40P100Q-R
  •  国内价格
  • 1+2.70000
  • 100+2.52000
  • 300+2.34000
  • 500+2.16000
  • 2000+2.07000
  • 5000+2.01600

库存:0