ASDM40N100Q-R

ASDM40N100Q 40V N-Channel MOSFET Features Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Halongen Free and Green Devices Product Summary • • Available (RoHS Compliant) Application • • • VDSS 40 V RDS(ON)-Typ@VGS=10V 1.6 mΩ ID 100 A DC/DC Converters On board power for server Synchronous rectification DFN5*6-8 N-Channel Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 320 A TC=25°C 100 TC=100°C 70 TA=25°C 30 TA=70°C 21 TC=25°C 65 TC=100°C 26 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA NOV 2020 Version1.1 1/9 ③ ③ www.ascendsemi.com A W 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET Symbol RJC RJA ③ Rating Parameter Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Unit 1.50 °C/W 50 °C/W 180 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition ASDM40N100Q Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=40V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 40 30 1 1.7 µA 2.5 V ±100 nA VGS=4.5V, IDS=35A 2.3 2.8 mΩ VGS=10V, IDS=50A 1.6 2.0 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 18 ns 29 nC 1.3 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss VGS=0V, VDS=20V, Frequency=1.0MHz Reverse Transfer Capacitance 136 td(ON) Turn-on Delay Time 13 tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω Turn-off Fall Time 2649 1324 21 29 pF ns 9 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge NOV 2020 Version1.1 2/9 VDS=32V, VGS=10V, IDS=50A 29 5 nC 9 www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET Notes: NOV 2020 Version1.1 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 100A. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =50A, VDD = 34V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. 3/9 www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET Typical Characteristics Power Dissipation 70 Drain Current 100 ID - Drain Current (A) PD - Power (W) 60 50 40 30 20 10 90 80 70 60 50 40 10 VGS=10V 0 0 0 25 50 75 100 125 25 150 50 TJ - Junction Temperature (°C) 10 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) Safe Operation Area 1000 75 Drain Current 10 Ids=50A 8 6 4 2 0 0 1000 1 2 3 7 8 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=1.92°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) NOV 2020 Version1.1 4/9 www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET Typical Characteristics Output Characteristics VGS=10V，8V，7V 80 5V 60 3V 40 20 2V 0 0 1 2 3 4 Drain-Source On Resistance 10 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 100 8 6 VGS=4.5V 4 2 VGS=10V 0 0 20 40 VDS - Drain-Source Voltage (V) VGS=10V IDS=50A 1.5 1.0 0.5 TJ=25°C Rds(on)=3.5mΩ 10 TJ=150°C -50 -25 0 25 50 75 100 125 0.1 0.2 150 0.4 VGS - Gate-Source Voltage (V) 4000 Frequency=1.0MHz Ciss 2000 Coss 1000 Crss 1 1 1.2 1.4 10 VDS=24V IDS=50A 9 8 7 6 5 4 3 2 1 0 10 VDS - Drain-Source Voltage (V) NOV 2020 Version1.1 0.8 Gate Charge Capacitance 5000 0 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 3000 TJ=25°C 1 0.0 C - Capacitance (pF) 100 Source-Drain Diode Forward 100 IS - Source Current (A) Normalized On Resistance 2.0 80 ID - Drain Current (A) Drain-Source On Resistance 2.5 60 5/9 100 0 10 20 30 QG - Gate Charge (nC) www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms NOV 2020 Version1.1 6/9 www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM40N100Q-R 40N100 DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5*6-8 NOV 2020 Version1.1 40N100 7/9 www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET DFN5*6- 8 PACKAGE IN FORMATION NOV 2020 Version1.1 8/9 www.ascendsemi.com 0755-86970486 ASDM40N100Q 40V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2020 Version1.1 9/9 www.ascendsemi.com 0755-86970486