ASDM40N15S-R

ASDM40N15S 40V N-CHANNEL MOSFET Product Summary General Features ● High density cell design for ultra low Rdson V DS 40 V ● Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 6.0 mΩ ● Excellent package for good heat dissipation ID 15 A ● Fully characterized avalanche voltage and current ● Special process technology for high ESD capability Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply Top View SOP-8 N-Channel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID 15 A ID (100℃) 10.6 A Pulsed Drain Current IDM 60 A Maximum Power Dissipation PD 3.1 W TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient RθJA 50 ℃/W Thermal Resistance,Junction-to-Case RθJC 20 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Operating Junction and Storage Temperature Range Thermal Characteristic NOV 2018 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM40N15S 40V N-CHANNEL MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - - V Zero Gate Voltage Drain Current IDSS VDS=32V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A - 6.0 10 mΩ VGS=4.5V, ID=8A - 7.4 15 mΩ VDS=5V,ID=10A - 80 - S - 1718 - PF - 182 - PF - 152 - PF - 7 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=20V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=20V, RL=2Ω - 20 - nS td(off) VGS=10V,RG=3Ω - 34 - nS - 19 - nS - 60 - nC - 8.1 - nC - 16.9 - nC - - 1.2 V - - 15 A TJ = 25°C, IF = 10A - 31 - nS (Note3) - 33 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=20V,ID=10A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time Reverse Recovery Charge VGS=0V,IS=10A trr di/dt = 100A/μs Qrr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2018 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM40N15S 40V N-CHANNEL MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current NOV 2018 Version1.0 Figure 6 Source- Drain Diode Forward 3/8 Ascend Semicondutor Co.,Ltd ASDM40N15S C Capacitance (pF) Power Dissipation (W) 40V N-CHANNEL MOSFET TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2018 Version1.0 4/8 Ascend Semicondutor Co.,Ltd ASDM40N15S 40V N-CHANNEL MOSFET Test circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit NOV 2018 Version1.0 5/8 Ascend Semicondutor Co.,Ltd ASDM40N15S 40V N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM40N15S-R 40N15 SOP-8 PACKAGE MARKING SOP-8 40N15 NOV 2018 Version1.0 6/8 Packing Quantity Tape&Reel 4000/Reel Ascend Semicondutor Co.,Ltd ASDM40N15S 40V N-CHANNEL MOSFET SOP-8 PACKAGE IN FORMATION NOV 2018 Version1.0 7/8 Ascend Semicondutor Co.,Ltd ASDM40N15S 40V N-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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