ASDM30P30BE-R

ASDM30P30BE -30V P-Channel MOSFET Features Product Summary • Low RDS(ON) • Fast switching • Green Device Available VDSS R Application DS(ON) .Typ@ V 10 mΩ -30 A VGS=-10V ID • MB / VGA / Vcore • POL Applications -30 PDFN3.3*3.3-8 P-MOSFET Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -30 A TC = 100℃ -7 A -90 A TA = 25℃ 3.7 W Thermal Resistance, Junction to Ambient 33.8 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current PD Power Dissipation RθJA TJ, TSTG note1 Operating and Storage Temperature Range Thermal Characteristics Symbol RJC ③ RJA Parameter Rating Unit Thermal Resistance-Junction to Case Steady State 4.6 °C/W Thermal Resistance-Junction to Ambient Steady State 62 °C/W Note ①：Max. current is limited by bonding wire Note ②：UIS tested and pulse width are limited by maximum junction temperature 150 oC Note ③：Surface Mounted on 1in2 FR-4 board with 1oz. NOV 2021 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units -30 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V, - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID= -250μA -1.0 -1.5 -2.5 V Static Drain-Source on-Resistance VGS =-10V, ID =-10A - 10 14 note2 VGS =-4.5V, ID =-5A - 14.4 20 - 1757 - pF - 371 - pF - 315 - pF - 30 - nC - 5.3 - nC - 7.6 - nC - 14 - ns - 20 - ns - 95 - ns - 65 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = -15V, VGS = 0V, f = 1.0MHz VDS= -15V, ID = -9.1A, VGS = -10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD = -15V, ID = -6A, VGS=-10V, RGEN=2.5Ω Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -90 A VSD Drain to Source Diode Forward Voltage - -0.8 -1.2 V VGS = 0V, IS = -10A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOV 2021 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 50 50 V GS=10 thru 6V T C=-55℃ 5V 40 -ID (A) 40 4V 25℃ 30 30 20 20 10 10 3V -VDS (V) 0 0 1 2 3 4 5 Figure 3:On-resistance vs. Drain Current 28 125℃ 0 -VGS (V) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) -IS (A) 10 24 20 TJ =150℃ V GS =-4.5V 16 8 TJ =-50℃ TJ=-25℃ 1 12 V GS=-10V 4 -ID(A) 0 0 2 4 6 8 10 12 0.1 0.0 Figure 5: Gate Charge Characteristics 8 0.4 V SD(V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS(V) 10 0.2 C(pF) V DS =-15V ID=-9.1A Ciss 103 6 Coss C rss 4 2 10 2 0 0 Qg(nC) 6 NOV 2021 Version1.0 12 18 3/8 24 30 101 0 -VDS(V) 5 10 15 20 www.ascendsemi.com 25 30 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) (V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area 0.5 -100 Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature -ID(A) 14 100 -ID(A) 12 10 10μs 10 8 100μs 1 6 Limited by RDS(on) 1ms 4 TC=25℃ Single pulse 0.1 0.1 1 2 DC VDS (V) 10 0 100 0 25 50 Tc (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 102 ZthJ-C(℃/W) 101 100 P DM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) 10-1 10-2 -4 10 10-3 NOV 2021 Version1.0 10-2 10-1 4/8 100 101 102 www.ascendsemi.com 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET NOV 2021 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET Ordering and Marking Information Device ASDM30P30BE-R Marking 30P30B PDFN3.3*3.3-8 Packaging Quantity Tape&Reel 5000/Reel MARKING PACKAGE 30P30B PDFN3.3*3.3-8 NOV 2021 Version1.0 Package 6/8 www.ascendsemi.com 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET PDFN3.3*3.3-8 PACKAGE INFORMATION NOV 2021 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM30P30BE -30V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 8/8 www.ascendsemi.com 0755-86970486