ASDM30P35E-R

ASDM30P35E -30V P-Channel MOSFET Product Summary Features • Low RDS(ON) • High Current capability V DS • Reliable and Rugged R • ROHS Compliant & Halogen-Free @ VGS=10 V DS(on),TYP ID Application -30 V 8.2 mΩ -35 A • Notebook AC-in load switch • Battery protection charge/discharge top view PDFN3.3*3.3-8 Absolute Maximum Ratings (TJ=25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C -35 A Tc=25°C -140 A Tc=25°C -35 Tc=100°C -19 Tc=25°C 27 W Rating Unit TJ TSTG IS IDM Storage Temperature Range Diode Continuous Forward Current ① Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation V A Thermal Characteristics Symbol RJC ③ RJA Parameter Thermal Resistance-Junction to Case Steady State 3.6 °C/W Thermal Resistance-Junction to Ambient Steady State 37 °C/W Note ①：Max. current is limited by bonding wire Note ②：UIS tested and pulse width are limited by maximum junction temperature 150 oC Note ③：Surface Mounted on 1in2 FR-4 board with 1oz. NOV 2020 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM30P35E -30V P-Channel MOSFET Electrical Characteristics (TJ=25°C Unless Otherwise Noted) Symbol Parameter Min. Typ. Max. Unit VGS=0V, ID=-250A -30 - - V VDS=-27V, VGS=0V - - -1 uA Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 -1.4 - 2. 5 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=-10V, ID=-10A - 8.2 10 VGS=-4.5V, ID=-8A - 11.3 15 VDS=-10V, ID=-8A - 6.8 - VGS=0V,VDS=0V, F=1MHz - 10 - - 1445 - 172 - - 105 - - 15.8 - - 28.8 - - 46.9 - - 12.3 - - 32 - Static Electrical Characteristics Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gfs ④ Drain-Source On-state Resistance Forward Transconductance Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Turn-on Dela y Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Qg Total Gate Charge Qg Qgs m S ⑤ RG td(ON) Test Conditions VGS=0V, VDS=-15V, Freq.=1MHz VDD=-15V, ID=-1A, VGS=-4.5V, RGEN=2.7 VDS=-25V, VGS=-4.5V, ID=-13A Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge Source-Drain Characteristics ④ Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge  pF nS - 43 - VDS=-15V, VGS=-10V, ID=-10A - 8.4 - - 14 - IS=-3A, VGS=0V - -0.8 -1.0 V 19.2 - 0.8 - nS nC IF=-20A,VGS=0, dlF/dt=100A/us - nC Note ④：Pulse test (pulse width300us, duty cycle2%). Note ⑤：Guaranteed by design, not subject to production testing. NOV 2020 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM30P35E Normalized On Resistance (m) ID , Continuous Drain Current (A) -30V P-Channel MOSFET TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Fig.5 Fig.4 Qg , Gate Charge (nC) Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Transient Impedance NOV 2020 Version1.0 3/7 -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area www.ascendsemi.com 0755-86970486 ASDM30P35E -30V P-Channel MOSFET Fig.7 Switching Time Waveform NOV 2020 Version1.0 4/7 Fig.8 Gate Charge Waveform www.ascendsemi.com 0755-86970486 ASDM30P35E -30V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM30P35E-R 30P35 Package PDFN3.3*3.3-8 Packing Quantity Tape&Reel 5000/Reel PACKAGE MARKING PDFN3.3*3.3-8 30P35 NOV 2020 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM30P35E -30V P-Channel MOSFET * Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ NOV 2020 Version1.0 Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° 6/7 Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° www.ascendsemi.com 0755-86970486 ASDM30P35E -30V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2020 Version1.0 7/7 www.ascendsemi.com 0755-86970486