ASDM30P11TD-R

ASDM30P11TD -30V P-Channel MOSFET Features Product Summary ● Low FOM RDS(on)×Qgd ● 100% avalanche tested ● Easy to use/drive ● RoHS compliant -30 V R DS(on),TYP@ VGS=10 V 6.4 mΩ I -55 A V Application ● Power Switch Circuit of Adaptor and Charger ● Battery Protection Charge/Discharge ● Notebook AC-in Load Switch DS D PDFN3*3-8 Maximum Ratings TA = 25ºC, unless otherwise noted -Source voltage(VGS=0V) Drain Current2) C Symbol Values Unit VDS -30 V = 25ºC -55 ID C = 100ºC Drain Current3) A -34.6 ID,pulse -220 A VGSS ±25 V EAS 200 mJ PD 31.2 W TJ, Tstg -55~+150 ºC Symbol Max. Unit Thermal Resistance, Junction-to-Case RthJC 4 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 35 ºC/W -Source Voltage Dissipation Junction and Storage Temperature Range Parameter Notes 1) L=0.5mH,VDD=-15V,Start TJ=25℃ 2) Limited by maximum junction temperature. 3) Repetitive Rating: Pulse width limited by maximum junction temperature. NOV 2021 Version1.0 1/9 www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET Electrical Characteristics TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = -250µA -30 -- -- VDS = -30V VGS = 0V, TJ = 25ºC -- -- -1 VDS = -24V, VGS = 0V, TJ = 125ºC -- -- -100 IGSS VGS = ±25V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V VGS = -10V, ID = -20A -- 6.4 8 mΩ Drain-Source On-State-Resistance RDS(on) VGS = -4.5V, ID = -10A -- 10.5 13 mΩ -- 3482 -- -- 400 -- Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current μA IDSS Gate-Source Leakage Current V Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = -15V f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 309 -- Total Gate Charge Qg -- 61 -- Gate-Source Charge Qgs -- 12 -- Gate-Drain Charge Qgd -- 10 -- VPlateau -- 3.1 -- Turn-on Delay Time td(on) -- 19 -- Turn-on Rise Time tr -- 33 -- Turn-off Delay Time td(off) -- 38 -- -- 15 -- -- -- -1.2 V -- -- -55 A -- 45 -- ns -- 29 -- nC Gate Plateau Voltage Turn-off Fall Time VDS = -15V , ID = -10A VGS = -10V VDS = -15V , VGS = -10V RG = 3Ω, ID = -10A tf pF nC V ns Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD Continuous Diode Forward Current IS Reverse Recovery Time trr TJ = 25ºC, ISD = -10A, VGS = 0V IF = -10A，diF/dt = -100A/μs Reverse Recovery Charge NOV 2021 Version1.0 Qrr 2/9 www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 35 1000 100μs 10 Limited by RDS(on) 1ms 10ms 1 SINGLE PULSE TC=25℃ TJ=150℃ 0.1 DC PD,Power Dissipation,[W] -ID,Drain Current,[A] 30 10μs 100 25 20 15 10 5 0 0.01 0.1 1 10 -VDS,Drain-to-Source Voltage,[V] 0 100 Figure 1. Maximum Safe Operating Area 50 75 100 125 TC,CaseTemperature,[℃] 150 Figure 2. Maximum Power Dissipation vs Case Temperature 80 60 Vgs=-10V 70 -ID,Drain Current[A] 50 -ID,Drain Current,[A] 25 40 30 20 10 60 Vgs=-4.5V Vgs=-4V 50 40 Vgs=-3.5V 30 20 Vgs=-3V 10 0 0 25 50 75 100 125 TC,Case Temperature,[℃] 150 Figure 3. Maximum Continuous Drain Current vs Case Temperature NOV 2021 Version1.0 3/9 0 1 2 -VDS,Drain-to-Source Voltage,[V] 3 Figure 4. Typical output Characteristics www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted ZθJC,Thermal Response,[℃/W] 10 1 D = 1.0 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 Notes: Notes: 1.DutyCycle, Cycle, D=t1/t2 1.Duty D=t1/t2 2.TJM 2.T == P PDM *R*RθJC ++ T TC 0.01 JM 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 DM θJA A 1 10 T , Rectangular Pulse Duration, [sec] Figure 5 Maximum Effective Thermal Impedance , Junction to Case 100 Note: 1.VDS=-5V 2.250us Pulse Test -Is,Source Current,[A] -ID,Drain Current,[A] 100 10 Tj=150℃ Tj=25℃ 1 0.1 10 Tj=150℃ Tj=25℃ 1 0.1 0 1 2 3 -VGS,Gate-to-Source Voltage,[V] 4 Figure 6 Typical Transfer Characteristics NOV 2021 Version1.0 4/9 0 0.2 0.4 0.6 0.8 1 1.2 -VSD,Source-to-Drain Voltage,[V] Figure 7 Typical Body Diode Transfer Characteristics www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 14 1.8 12 VGS = -4.5V RDS(on),[mΩ] 10 8 VGS = -10V 6 4 1.4 1.2 1 0.8 0.6 0.4 2 0 5 10 15 20 -ID,Drain Current,[A] 25 -50 30 Figure 8. Drain-to-Source On Resistance vs Drain Current 0 50 100 TJ,Junction Temperature,[℃] 150 Figure 9. Normalized On Resistance vs Junction Temperature 1.12 1.2 1.1 1.1 1.08 1 BVDSS,(Normalized) VGS(th),(Normalized) PULSED TEST VGS = -10V ID = -20A 1.6 RDS(on),(Normalized) PULSED TEST Tj = 25℃ 0.9 0.8 0.7 VGS = VDS ID = -250μA 0.6 0.5 1.06 1.04 1.02 1 0.98 0.96 0.94 0.4 0.92 -50 0 50 100 TJ,Junction Temperature,[℃] 150 -50 0 50 100 150 TJ,Junction Temperature,[℃] Figure10. Normalized Threshold Voltage vs Figure 11. Normalized Breakdown Voltage vs Junction Temperature Junction Temperature NOV 2021 Version1.0 5/9 www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 10 Vgs,Gate-to-Source Voltage,V Capacitance,pF 10000 Ciss f = 1MHz Ciss = Cgs+Cgd Coss = Cds+Cgd Crss = Cgd 1000 Coss Crss 100 0 10 20 -VDS,Drain-to-Source Voltage,V 30 Figure 12. Capacitance Characteristics NOV 2021 Version1.0 6/9 8 6 VDS=-15V ID=-10A 4 2 0 0 20 40 60 Qg,Gate Charge,nC 80 Figure 13 Typical Gate Charge vs Gate to Source Voltage www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM30P11TD-R 30P11 PDFN3*3-8 Tape&Reel 5000/Reel MARKING PACKAGE PDFN3*3-8 NOV 2021 Version1.0 30P11 7/9 www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET PDFN3*3_8 Package NOV 2021 Version1.0 8/9 www.ascendsemi.com 0755-86970486 ASDM30P11TD -30V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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