ASDM30P100KQ-R

ASDM30P100KQ -30V P-Channel MOSFET Product Summary General Features ● Advanced groove technology is adopted ● Provide excellent RDS(ON) ● Low gate charge and operate at low gate voltage Application BVDSS -30 V RDS(on).Typ.@VGS=-10V 5.0 mΩ ID -100 A ● Lithium battery protection ● Wireless impact ● Mobile phone fast charging Schematic diagram TO-252 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TC = 25℃ -100 A ID Continuous Drain Current TC = 100℃ -59 A IDM Pulsed Drain Current note1 -400 A EAS Single Pulsed Avalanche Energy note2 210 mJ PD Power Dissipation TC = 25℃ 109 W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ 3.0 DEC 2018 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM30P100KQ -30V P-Channel MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS= -30V, VGS=0V, - - -1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID= -250μA -1.0 -1.5 -2.5 V VGS= -10V, ID= -30A - 5.0 6.0 VGS= -4.5V, ID= -20A - 7.0 9.0 - 6560 - pF - 742 - pF - 700 - pF - 30 - nC - 6 - nC Static Drain-Source on-Resistance RDS(on) mΩ Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge - 8 - nC td(on) Turn-on Delay Time - 11 - ns tr Turn-on Rise Time VDD= -15V, ID= -30A, - 13 - ns td(off) Turn-off Delay Time VGS= -10V, RGEN=2.5Ω - 52 - ns tf Turn-off Fall Time - 21 - ns - - -30 A - - -400 A -0.8 -1.2 V Maximum Continuous Drain to Source IS ISM VSD VDS= -15V, VGS=0V, f=1.0MHz VDS= -15V, ID= -30A, VGS= -10V DiodeForward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS=0V, IS= -30 A Notes: 1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2、E AS condition: T J =25℃, V DD = -15V, V G = -10V, R G =25Ω, L=0.5mH, I AS = -29A 3、Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% DEC 2018 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM30P100KQ -30V P-Channel MOSFET Typical Characteristics Figure1: Output Characteristics Figure 3:On-resistance vs. Drain Current Figure 5: Gate Charge Characteristics DEC 2018 Version1.0 3/7 Figure 2: Typical Transfer Characteristics Figure 4: Body Diode Characteristics Figure 6: Capacitance Characteristics www.ascendsemi.com 0755-86970486 ASDM30P100KQ -30V P-Channel MOSFET Figure 7: Normalized Breakdown Voltage vs. Figure 8: Normalized on Resistance vs. Junction Temperature Junction Temperature Figure 9: Maximum Safe Operating Area Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case DEC 2018 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM30P100KQ -30V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM30P100KQ-R 30P100 TO-252 Quantity Tape&Reel 2500/Reel MARKING PACKAGE TO-252 DEC 2018 Version1.0 Packing 30P100 5/7 www.ascendsemi.com 0755-86970486 ASDM30P100KQ -30V P-Channel MOSFET TO-252 D1 L3 2 c L E D3 h 1 L2 L4 L1 D2 b e SYMBOL MIN Typ. MAX A 2.200 2.300 2.400 A1 0.000 b 0.640 0.690 0.740 0.460 0.520 0.580 6.500 6.600 6.700 D D MILLIMETER D1 5.334 REF D2 4.826 REF 3.166 REF D3 E 6.000 A h 0.000 L 9.900 A1 6/7 1.400 0.100 0.200 10.100 10.300 1.550 1.700 1.600 REF L3 L4 6.200 2.888 REF L1 L2 6.100 2.286 TYP e DEC 2018 Version1.0 0.127 0.600 0.800 1.000 1.100 1.200 1.300 www.ascendsemi.com 0755-86970486 ASDM30P100KQ -30V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version1.0 7/7 www.ascendsemi.com 0755-86970486