ASDM30N65E-R

ASDM30N65E 30V/65A N-CHANNEL MOSFET Product Summary Feature •100% EAS Guaranteed •Green Device Available •Super Low Gate Charge • Excellent CdV/dt effect decline •Advanced high cell density Trench technology VDS 30 V RDS(on),typ VGS=10V 4.5 mΩ ID 65 A DFN3.3*3.3-8L Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage Unit 30 V Tc =25°C 65 A Tc =25°C 65 A Tc =100°C 40 A 140 A 140 mJ 40 W TA =25°C Tc =25°C ±20 MSL TSTG , TJ Rating V Level 3 Storage and junction temperature range -55 to 150 °C Typical Unit Thermal Characteristics Symbol Parameter RθJL Thermal Resistance, Junction-to-Lead 40 °C/W R JA Thermal Resistance, Junction-to-Ambient 75 °C/W NOV 2019 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM30N65E 30V/65A N-CHANNEL MOSFET Typical Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.7 2.5 V RDS(ON) Drain-Source On-State Resistance ③ VGS=10V, ID=30A -- 4.5 5 mΩ RDS(ON) Drain-Source On-State Resistance ③ VGS=4.5V, ID=15A -- 5.5 6 mΩ V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=15A, VGS=10V 3075 pF 400 pF 315 pF Ω -- 1.4 -- -- 31.6 -- nC -- 6.07 -- nC -- 13.8 -- nC -- 11.2 -- nS Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=20A, -- 49 -- nS t d(off) Turn-Off Delay Time RG=1.5Ω, -- 35 -- nS tf Turn-Off Fall Time -- 7.8 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage t rr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=2A,VGS=0V -- 0.8 1.0 V Tj=25℃,Isd=10A, -- 20 -- nS VGS=0V di/dt=500A/μs 11.5 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.1mH,RG = 25Ω, IAS = 48A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. NOV 2019 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM30N65E 30V/65A N-CHANNEL MOSFET Typical Characteristics 5.5 12 VGS=7V 8 5.0 VGS=5V RDSON (mΩ) ID Drain Current (A) ID=12A VGS=10V 10 VGS=4.5V 6 4.5 VGS=3V 4 4.0 2 0 3.5 0 0.25 0.5 VDS , Drain-to-Source Voltage (V) 0.75 2 Fig.1 Typical Output Characteristics 4 6 8 VGS (V) 10 Fig.2 On-Resistance vs. G-S Voltage 10 12 ID=12A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=175℃ TJ=25℃ 4 2 8 6 4 2 0 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 0 1.2 Fig.3 Forward Characteristics of Reverse 40 60 QG , Total Gate Charge (nC) 80 Fig.4 Gate-Charge Characteristics 1.5 2.0 Normalized On Resistance Normalized VGS(th) 20 1 1.5 1.0 0.5 0.5 0 -50 25 100 TJ ,Junction Temperature (℃ ) -50 175 Fig.5 Normalized VGS(th) vs. TJ NOV 2019 Version1.0 25 100 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3/7 Ascend Semicondutor Co.,Ltd ASDM30N65E 30V/65A N-CHANNEL MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Transient Thermal Resistance r(t) , Normalized Effective Fig7. Typical Capacitance Vs.Drain-Source Voltage T1, Square Wave Pulse Duration(sec) Fig9. T1 ,Transient Thermal Response Curve Fig9. Threshold Voltage Vs. Temperature Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms NOV 2019 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM30N65E 30V/65A N-CHANNEL MOSFET Ordering and Marking Information Device ASDM30N65E Marking 30N65 Package Packaging Quantity DFN3.3*3.3-8L Tape&Reel 5000/Reel MARKING PACKAGE blank 30N65 DFN3.3*3.3-8L Ordering Number Lead Free Halogen Free ASDM30N65-E-R ASDM30N65G-E-R Package DFN3.3*3.3-8L 1 T:Tube,R:Tape Reel ASDM30N65G-E- R 1 Packing Type 2 Package Type 2 E:DFN3.3*3.3-8L 3 blank : Lead Free G:Halogen Free and Lead Free 3 Green Package NOV 2019 Version1.0 5/7 Ascend Semicondutor Co.,Ltd ASDM30N65E 30V/65A N-CHANNEL MOSFET Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ NOV 2019 Version1.0 Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° 6/7 Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° Ascend Semicondutor Co.,Ltd ASDM30N65E 30V/65A N-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2019 Version1.0 7/7 Ascend Semicondutor Co.,Ltd