ASDM30N150Q-R

ASDM30N150Q 30V N-Channel MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ High ruggedness Low Gate Charge (Typ 143nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter Product Summary V DS 30 V R DS(on),Typ@ VGS=10 V 1.7 mΩ ID 150 A top view DFN5x6-8 Absolute maximum ratings Symbol VDSS Parameter Drain to source voltage =25oC) ID IDM IDSM Value Unit 30 V Continuous drain current (@Tc 150* A Continuous drain current (@Tc=100oC) 78* A 600 A Continuous drain current (@Ta=25oC) 30 A Continuous drain current (@Ta=70oC) 24 A ± 20 V Drain current pulsed(note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 576 mJ EAR Repetitive avalanche energy (note 1) 57 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@Tc=25oC) 43 W Total power dissipation (@Ta=25oC) 2.6 W -55 ~ + 150 oC Value Unit PD TSTG, TJ Operating junction temperature & storage temperature *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case 1.8 oC/W Rthja Thermal resistance, Junction to ambient 62 oC/W Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's board design. DEC 2018 Version2.0 1/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to source breakdown voltage Breakdown voltage temperature coefficient VGS=0V, ID=250uA 30 ID=250uA, referenced to 25oC V V/oC 0.02 VDS=30V, VGS=0V 1 uA VDS=24V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 2.4 V Drain to source leakage current IGSS On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward transconductance VDS=VGS, ID=250uA 1.2 VGS=4.5V, ID=30A,TJ=25oC 3.4 4.5 mΩ VGS=10V, ID=30A,TJ=25oC 1.7 2.5 mΩ VDS=5V, ID=30A 73 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf 6272 VGS=0V, VDS=15V, f=1MHz 1022 pF 718 20 VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) Rising time Turn off delay time 58 ns 158 Fall time 77 Qg Total gate charge Qgs Gate-source charge Qgd Rg 143 Gate-drain charge VDS=24V, VGS=10V, ID=30A , IG=5mA (note 4,5) Gate resistance VDS=0V, Scan F mode 4.2 17 nC 43 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=45A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us Typ. Max. Unit 150 A 600 A 1.4 V 26 ns 10 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =48A, VDD=30V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. DEC 2018 Version2.0 2/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature DEC 2018 Version2.0 3/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area Fig. 8. Capacitance Characteristics Fig. 10. Maximum drain current vs. case temperature Fig. 11. Transient thermal response curve DEC 2018 Version2.0 4/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform DEC 2018 Version2.0 5/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) VDS RG IRRM Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period DEC 2018 Version2.0 6/9 VF VDD Body diode forward voltage drop www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM30N150Q-R 30N150 DFN5*6-8 Tape&Reel 4000/ Reel PACKAGE MARKING DFN5*6-8 DEC 2018 Version2.0 30N150 7/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET DFN5*6-8 Symbol A A1 A2 b C D D1 D2 e E E1 E2 L L1 L2 L3 H Ө Dimensions in Millimeters Min Max 0.85 1.00 0.01 0.05 0.69 0.75 0.40 0.45 0.20 0.30 4.80 4.95 3.91 4.06 1.60 1.80 1.27 TYP 5.65 5.80 3.46 3.50 0.80 0.95 0.15 0.3 0.08 0.15 0.58 0.73 0.45 0.60 6.15 6.28 8° 12° DEC 2018 Version2.0 Dimensions in Inches Min Max 0.033 0.039 0.000 0.002 0.027 0.030 0.016 0.018 0.008 0.012 0.189 0.195 0.154 0.160 0.063 0.071 0.05 TYP 0.222 0.228 0.136 0.138 0.031 0.037 0.006 0.012 0.003 0.006 0.023 0.029 0.018 0.024 0.242 0.247 8° 12° 8/9 www.ascendsemi.com 0755-86970486 ASDM30N150Q 30V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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