ASDM60R025NQ-R

ASDM60R025NQ 60V N-Channel MOSFET General Features Product Summary ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating Application ● DC/DC Converter V DS 60 V R DS(on),Typ@ VGS=10 V 2.6 mΩ ID 116 A ● Ideal for high-frequency switching and synchronous rectification DFN5*6-8 N-Channel Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 60 V Gate-Source Voltage VGS ±20 V DrainCurrent-Continuous(Silicon Limited) ID 116 A Drain Current-Continuous(TC=100℃) ID (100℃) 63.6 A Pulsed Drain Current IDM 464 A Maximum Power Dissipation PD 100 W Derating factor Single pulse avalanche energy 0.8 (Note 5) Operating Junction and Storage Temperature Range W/℃ EAS 500 mJ TJ,TSTG -55 To 150 ℃ RθJC 1.4 ℃/W RθJA 26 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) Thermal Resistance,Junction-to-Ambient NOV 2020 Version2.0 1/7 Ascend Semicondutor Co.,Ltd ASDM60R025NQ 60V N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS,ID=250μA 1.0 1.6 2.4 V VGS=10V, ID=45A - 2.6 3.0 mΩ VGS=4.5V, ID=45A - 3.2 3.5 mΩ VDS=10V,ID=45A 40 - - S - 3059 - PF - 520 - PF - 119 - PF - 11 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=30V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=45A - 5 - nS td(off) VGS=10V,RG=4.7Ω - 56 - nS - 12 - nS - 67 nC - 12 nC - 8.5 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=45A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=45A IS - trr TJ = 25°C, IF = IS di/dt = 100A/μs Qrr (Note3) - 1.2 V 116 A - 48 nS - 60 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω NOV 2020 Version2.0 2/7 Ascend Semicondutor Co.,Ltd ASDM60R025NQ 60V N-Channel MOSFET ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance NOV 2020 Version2.0 Figure6. Drain-Source on Resistance 3/7 Ascend Semicondutor Co.,Ltd ASDM60R025NQ 60V N-Channel MOSFET Figure7. Safe Operation Area Figure8. Drain-source breakdown voltage Figure 9.Transient thermal impedance NOV 2020 Version2.0 4/7 Ascend Semicondutor Co.,Ltd ASDM60R025NQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60R025NQ-R 60R025N DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5*6-8 NOV 2020 Version2.0 60R025N 5/7 Ascend Semicondutor Co.,Ltd ASDM60R025NQ 60V N-Channel MOSFET DFN5x6_P, 8 Leads NOV 2020 Version2.0 6/7 Ascend Semicondutor Co.,Ltd ASDM60R025NQ 60V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2020 Version2.0 7/7 Ascend Semicondutor Co.,Ltd