ASDM20N16E-R

ASDM20N16E 20V N-Channel MOSFET Features • Trench Power MV MOSFET technology • High Speed switching • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free Product Summary V DS R I Application • PWM application • Load switch DS(on),Typ @ VGS=4.5 V D 20 V 8.7 mΩ 16 A PDFN3.3x3.3-8 ■ Absolute Maximum Ratings (TA =25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ±10 V 16 TA=25℃ Drain Current A ID 10 TA=100℃ Pulsed Drain Current A IDM 64 A 1 TA=25℃ Total Power Dissipation C W PD 0.4 TA=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 ■Thermal resistance Parameter Symbol Typ Max Units Thermal Resistance Junction-to-Ambient D Steady-State RθJA 29 36 ℃/W Thermal Resistance Junction-to-Case Steady-State RθJC 3.6 4.5 ℃/W NOV 2021 Version1.0 1/9 www.ascendsemi.com 0755-86970486 ASDM20N16E 20V N-Channel MOSFET ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 20 - - V VDS=20V, VGS=0V - - 1 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V, Tj=150℃ - - 100 IGSS VGS= ±10V, VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 0.4 0.7 1.0 V VGS=4.5V, ID=4.5A - 8.7 11 Static Drain-Source On-Resistance RDS(ON) VGS=2.5V, ID=3.0A - 12 15.5 Static Parameter Gate-Body Leakage Current μA mΩ Diode Forward Voltage VSD IS=4.5A, VGS=0V - 0.9 1.2 V Gate resistance RG f=1MHz, Open drain - 3.3 - Ω Maximum Body-Diode Continuous Current IS - - 16 A Input Capacitance Ciss - 551 - Output Capacitance Coss - 119 - Reverse Transfer Capacitance Crss - 104 - Total Gate Charge Qg - 11 - Gate-Source Charge Qgs - 1 - Gate-Drain Charge Qgd - 2 - Reverse Recovery Charge Qrr - 4 - nC trr - 10 - ns Turn-on Delay Time tD(on) - 3.5 - Turn-on Rise Time tr - 26 - Turn-off Delay Time tD(off) - 19 - - 2.5 - Dynamic Parameters VDS=10V, VGS=0V, f=1MHz pF Switching Parameters VGS=10V, VDS=10V, ID=4.5A nC IF=4.5A, di/dt=165A/us Reverse Recovery Time Turn-off fall Time tf VGS=10V, VDD=10V, ID=4.5A RGEN=2.2Ω ns A. Repetitive rating; pulse width limited by max. junction temperature. B. Pd is based on max. junction temperature, using junction-case thermal resistance. C. The value of RθJA is measured with the device mounted on the minimum recommend pad size, in the still air environment with TA =25℃. The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design. NOV 2021 Version1.0 2/9 www.ascendsemi.com 0755-86970486 ASDM20N16E 20V N-Channel MOSFET ■Typical Electrical and Thermal Characteristics Diagrams 30 Tj=25℃ VDS=5V 3V 20 ID-Drain Current (A) ID-Drain Current (A) VGS=5V 4V 2.5V 20 2V 10 10 150℃ 25℃ 1.5V 0 0 0 1 2 0.5 3 1 VDS-Drain to Source Voltage (V) Figure 1. Output Characteristics 2.5 10 VGS-Gate to Source Voltage (V) Ciss C-Capacitance (pF) 2 Figure 2. Transfer Characteristics 1000 Coss 100 Crss 10 0 5 10 15 20 VDS=10V ID=4.5A 8 Tj=25℃ 6 4 2 0 0 5 VDS-Drain to Source Voltage (V) 200 10 15 Qg-Total Gate Charge (nC) Figure 3. Capacitance Characteristics Figure 4. Gate Charge 1.6 ID=4.5A Tj=25℃ RDS(on)-Drain to Source Resistance Normalized RDS(on)-Drain to Source resistance (mΩ) 1.5 Vgs-Gate to Source Voltage (V) 150 100 50 Vgs=10V 1.2 0.8 0.4 0 1 2 3 4 5 6 7 VGS-Gate to Source Voltage (V) Figure 5. On-Resistance vs Gate to Source Voltage NOV 2021 Version1.0 3/9 8 -75 -25 25 75 125 Tj-Junction Temperature (℃) Figure 6. Normalized On-Resistance www.ascendsemi.com 0755-86970486 175 ASDM20N16E 10 20 Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (mΩ) 20V N-Channel MOSFET 15 VGS=2.5V 10 VGS=4.5V 5 Tj=25℃ 0 0 150℃ 1 0.1 2 4 6 8 0.2 10 0.4 Figure 7. RDS(on) VS Drain Current BVDSS-MAX Drain to Source Voltage Normalized 0.8 1 Figure 8. Forward characteristics of reverse diode 1.4 ID=250uA ID=250uA VGS(th)-Threshold Voltage Normalized 1.2 1.05 1 0.95 0.9 -75 -25 25 75 125 1 0.8 0.6 0.4 0.2 175 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) Tj-Junction Temperature (℃) Figure 9. Normalized breakdown voltage Figure 10. Normalized Threshold voltage 2 5 Ptot-Power Dissipation (W) 4 ID-Drain Current (A) 0.6 Vsd- Source to Drain Voltage (V) ID-Drain Current (A) 1.1 25℃ 3 2 1 1.5 1 0.5 0 0 -50 0 50 100 TA-Ambient Temperature (℃) Figure 11. Current dissipation NOV 2021 Version1.0 4/9 150 -50 0 50 100 TA-Case Temperature (℃) Figure 12. Power dissipation www.ascendsemi.com 0755-86970486 150 ASDM20N16E 20V N-Channel MOSFET 100 Zth(J-A)-Thermal Resistance (℃/W) 1000 ID-Drain-Source Current (A) 100 D=0.5 D=0.3 10 D=0.1 D=0.05 D=0.02 1 D=0.01 0.1 Single Pulse 10 10uS Operation in this area is limited by RDS(ON) 100uS 300uS 1mS 1 10mS 0.1 TJ(max)=150℃ DC TA=25℃ 0.01 0.0001 0.001 Single Pulse 0.01 0.1 1 10 100 1000 10000 0.01 0.01 Square Wave Pulse Durtion(S) 0.1 1 10 VDS-Drain to Source Voltage (V) Figure 13. Maximum Transient Thermal Impedance Figure 14. Safe Operation Area ■ Test Circuits & Waveforms EAS=1/2*L*IAS2 Tp VGS D S L Tp G IAS A D VDD ID DUT 25Ω BVDSS Vds G S Tp VDS Figure A. Unclamped Inductive Switching (UIS) Test Circuit & Waveform NOV 2021 Version1.0 5/9 www.ascendsemi.com 0755-86970486 100 ASDM20N16E 20V N-Channel MOSFET D R1 VGS VGS (V) Qg R2 G 10V S C1 VDD D R3 VGS(pl) DUT G IG Qgd Qgs S Charge (C) Figure B. Gate Charge Test Circuit & Waveform VDS 90% L 90% 90% D DUT Rg C2 C1 VDD Vds G S R shunt Vgs VR 10% 10% 10% VGS tD(on) tD(off) tr tf Id=VR/R shunt D Rg ISD G S D C1 C2 VDD trr DUT G S R shunt VR 25%IRRM Qrr L IRRM Figure D. Diode Recovery Test Circuit & Waveform NOV 2021 Version1.0 6/9 www.ascendsemi.com 0755-86970486 ASDM20N16E 20V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM20N16E-R 20N16 Packing Quantity PDFN3.3x3.3-8 Tape&Reel 5000/Reel MARKING PACKAGE PDFN3.3x3.3-8 NOV 2021 Version1.0 Package 20N16 7/9 www.ascendsemi.com 0755-86970486 ASDM20N16E 20V N-Channel MOSFET NOV 2021 Version1.0 8/9 www.ascendsemi.com 0755-86970486 ASDM20N16E 20V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 9/9 www.ascendsemi.com 0755-86970486