ASDM20P13S-R

ASDM20P13S -20V P-Channel MOSFET Product Summary Features ● Advance high cell density Trench technology ●Low RDS(ON) to minimize conductive loss ●Low Gate Charge for fast switching ●Low Thermal resistance Application BVDSS -20 V RDS(on),Typ@VGS=- 4.5V 7.7 mΩ ID -13 A ●MB/VGA Vcore ●SMPS 2nd Synchronous Rectifier ●POL application ●BLDC Motor driver D G S SOP-8 Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID@TC=25℃ -13 A ID@TC=75℃ -8.36 A ID@TC=100℃ -6.93 A IDM -52 A Total Power Dissipation② PD@TC=25℃ 3.6 W Total Power Dissipation PD@TA=25℃ 0.69 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 80 mJ Continuous Drain Current Pulsed Drain Current ① Operating Junction Temperature Thermal resistance Parameter Symbol Min. Typ. Max. Unit - 24 ° C/W 85 ° C/W Thermal resistance, junction - case② RthJC - Thermal resistance, junction - ambient RthJA - NOV 2019 Version1.0 1/7 - www.ascendsemi.com 0755-86970486 ASDM20P13S -20V P-Channel MOSFET Electronic Characteristics Parameter Symbol Condition Min. Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =-250uA -20 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -0.4 Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) Forward Transconductance Source-drain voltage Typ Max. Unit V -0.6 -1.0 V VDS=-20V, VGS =0V -1.0 uA VGS=±12V ,VDS =0V ±100 nA VGS=-2.5V, ID=-4A 10.6 12 mΩ VGS=-4.5V, ID=-6A 7.7 9 mΩ gFS VDS =-10V, ID=-5A 9 VSD Is=-9A s 1.28 V Unit Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition f = 1MHz Min. Typ Max. - 2160 - - 432 - - 288 - pF Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD =25V - 15 - Gate - Source charge Qgs ID = 8A - 4 - Gate - Drain charge Q gd VGS = 10V - 6 - Unit nC Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； NOV 2019 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM20P13S -20V P-Channel MOSFET Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 80 VGS=-4.5V 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 60 40 VGS=-2.5V 20 0.2 0 0 0 0 50 100 150 Temperature (。C) 200 Fig.3 Threshold Voltage V.S Junction Temperature -50 1 Fig.4 Resistance V.S Drain Current 30 Junction Temperature 50 150 RDson(mΩ) 0 Vgs(th )d 0.5 Drain-Source voltage (V) 20 VGS=-4.5V 10 -0.5 VGS=-10V 0 0 10 -1 Fig.5 On-Resistance VS Gate Source Voltage 40 Fig.6 On-Resistance V.S Junction Temperature 1.5 Normalized ON-Resistance 30 25 RDson(mΩ) 20 30 Drain Current(A) 20 15 10 5 0 1 NOV 2019 Version1.0 3 VGS( -V ) 3/7 5 1 0.5 -50 0 50 100 Temperature www.ascendsemi.com 150 0755-86970486 ASDM20P13S -20V P-Channel MOSFET Fig.7 Switching Time Measurement Circuit Fig.9 Switching Time Measurement Circuit Fig.11 Avalanche Measurement Circuit NOV 2019 Version1.0 4/7 Fig.8 Gate Charge Waveform Fig.10 Gate Charge Waveform Fig.12 Avalanche Waveform www.ascendsemi.com 0755-86970486 ASDM20P13S -20V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM20P13S-R 20P13 SOP8 Tape&Reel Quantity 4000/Reel MARKING PACKAGE Lot Number SOP-8 20P13 Date Code NOV 2019 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM20P13S -20V P-Channel MOSFET SOP-8 PACKAGE IN FORMATION NOV 2019 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM20P13S -20V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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