ASDM30N80P
30V N-Channel MOSFET
Features
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate
Charge
Product Summary
V DS
30
V
R DS(on),TYP@ VGS=10 V
5.0
mΩ
80
A
Application
Load Switch
PWM Application
ID
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
TC = 25℃
80
A
TC = 100℃
50
A
320
A
88
mJ
75
W
ID
IDM
Continuous Drain Current
Pulsed Drain Current
note1
note2
EAS
Single Pulsed Avalanche Energy
PD
Power Dissipation
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
TJ, TSTG
TC = 25℃
Operating and Storage Temperature Range
NOV 2018 Version1.0
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1.68
62
-55 to +175
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℃/W
℃
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ASDM30N80P
30V N-Channel MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
30
-
-
V
VDS =30V, VGS = 0V,
TJ=25℃
-
-
1
VDS =24V, VGS = 0V,
TJ=125℃
-
-
10
VDS =0V,VGS = ±20V
-
-
±100
nA
Gate Threshold Voltage
VDS= VGS, ID=250μA
1.0
1.6
2.5
V
Off Characteristic
V(BR)DSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS=0V,ID=250μA
uA
On Characteristics
VGS(th)
RDS(on)
gFS
Static Drain-Source on-Resistance
VGS =10V, ID =20A
-
5.0
6
note3
VGS =4.5V, ID =10A
-
6.8
12
Forward Transconductance
VDS =5V, ID =10A
-
20
-
S
-
1914
-
pF
-
270
-
pF
-
218
-
pF
-
11.1
-
nC
-
1.85
-
nC
-
6.8
-
nC
-
7.5
-
ns
-
14.5
-
ns
-
35.2
-
ns
-
9.6
-
ns
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain(“Miller”) Charge
VDS =25V, VGS =0V,
f = 1.0MHz
VDS =15V, ID =20A,
VGS =4.5V
Switching Characteristics
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
VDS=15V,
ID=15A, RG=3.3Ω,
VGS =10V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain to Source Diode Forward
Current
-
-
80
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
320
A
VSD
Drain to Source Diode Forward
Voltage
-
-
1.2
V
trr
Body Diode Reverse Recovery Time
-
32
-
ns
-
12
-
nC
Qrr
Body Diode Reverse Recovery
VGS = 0V, IS=30A
IS=30A,dI/dt=100A/μs
Charge
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: TJ=25℃,VDD=25V,VGS=10V, L=0.1mH, IAS=42A, RG=25Ω
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
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ASDM30N80P
30V N-Channel MOSFET
Typical Performance Characteristics
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
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ASDM30N80P
30V N-Channel MOSFET
Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)
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ASDM30N80P
30V N-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
ASDM30N80P-T
30N80
Package
TO-220
Packing
Quantity
Tube
50/Tube
MARKING
PACKAGE
Lot Number
TO-220
30N80
Date Code
NOV 2018 Version1.0
5/7
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0755-86970486
ASDM30N80P
30V N-Channel MOSFET
TO-220
NOV 2018 Version1.0
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0755-86970486
ASDM30N80P
30V N-Channel MOSFET
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DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
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ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements,
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does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any
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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased
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