ASDM2300ZA-R

ASDM2300ZA 20V N-Channel MOSFET Features ● ● ● Product Summary High power and current handing capability Lead free product is acquired Surface mount package Application ● ● ● Battery protection Load switch Power management V DS 20 V R DS(on),TYP@ VGS=4.5 V 22 mΩ ID 4.5 A D G S SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA =25℃ Continuous Drain Current TA =70℃ ID 4.5 3.6 A Drain Current-Pulsed (Note 1) IDM 13.5 A Maximum Power Dissipation PD 1.25 W TJ,TSTG -55 To 150 ℃ RθJA 100 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) NOV 2018 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM2300ZA 20V N-Channel MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 Zero Gate Voltage Drain Current IDSS = VDS=16V,V GS 0V - Gate-Body Leakage Current IGSS VGS=±12V,V = DS 0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS,ID=250μA 0.45 0.65 1 VGS=2.5V, ID=3.5 A - 27.8 38 mΩ VGS=4.5V, = ID 4.5A - 22 27 mΩ VDS= =10V,ID 4A - 10 - S - 500 - PF - 300 - PF - 140 - PF - 20 40 nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS V Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=8V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=10V,ID=1A - 18 40 nS td(off) VGS=4.5V,RGEN=6Ω - 60 108 nS Turn-Off Delay Time Turn-Off Fall Time tf - 28 56 nS Total Gate Charge Qg - 10 15 nC Gate-Source Charge Qgs - 2.3 - nC Gate-Drain Charge Qgd - 2.9 - nC - - 1.2 V - - 1 A VDS=10V,ID=3A,VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS V= GS=0V,IS 1A Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. Surface mounted on FR4 Board, t ≤ 10 sec. 3. Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2018 Version1.0 2/8 www.ascendsemi.com 0755-86970486 ASDM2300ZA 20V N-Channel MOSFET Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr toff tf td(off) Vout 90% VOUT G 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS NOV 2018 Version1.0 3/8 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM2300ZA ID- Drain Current (A) Normalized On-Resistance 20V N-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge NOV 2018 Version1.0 4/8 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM2300ZA ID- Drain Current (A) 20V N-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance NOV 2018 Version1.0 5/8 www.ascendsemi.com 0755-86970486 ASDM2300ZA 20V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM2300ZA-R A0SHB SOT23 Tape&Reel 3000/Reel MARKING PACKAGE A0SHB SOT23 NOV 2018 Version1.0 6/8 www.ascendsemi.com 0755-86970486 ASDM2300ZA 20V N-Channel MOSFET Symbol Dimensions in Millimeters Dimensions in Inches Min Max Min Max A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 A2 0.90 1.05 0.035 0.041 b 0.30 0.55 0.012 0.022 C 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 1.20 1.40 0.047 0.95 TYP e e1 1.80 0.055 0.037 TYP 2.00 0.071 0.079 H 2.25 2.55 0.089 0.100 L 0.30 0.50 0.012 0.020 θ 0∘ 8∘ 0∘ 8∘ NOV 2018 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM2300ZA 20V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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