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ASDM30C25E-R

ASDM30C25E-R

  • 厂商:

    ASDSEMI(安森德)

  • 封装:

    DFN8_3.3X3.3MM

  • 描述:

    MOSFETs N-沟道,P-沟道 30V 25A,24A 23mΩ@4.5V,40mΩ@4.5V 2.8W DFN8_3.3X3.3MM

  • 详情介绍
  • 数据手册
  • 价格&库存
ASDM30C25E-R 数据手册
ASDM30C25E 30V N&P-Channel MOSFET Features Product Summary ● N+P Channel ● Enhancement mode V DS 30 -30 V ● Switching and High efficiency R DS(on),TYP@ VGS=±10 V 15 24 mΩ ● Pb-free lead plating; RoHS compliant R DS(on),TYP@ VGS=±4.5V 23 40 mΩ Application ID 25 -24 A ● Low on-resistance ● High battery density grooved N+P dual channel MOSFET ● Synchronous step-down converter applications ● Excellent RDSON and gate charge DFN3.3*3.3-8 Maximum ratings, at TA =25°C, unless otherwise specified Rating Symbol Parameter NMOS PMOS Unit V(BR)DSS Drain-Source breakdown voltage 30 -30 V VGS Gate-Source voltage ±20 ±20 V IS Diode continuous forward current TC =25°C 25 -24 A ID TC =25°C 25 -24 A Continuous drain current @VGS=±10V TC =100°C 16 -15 A IDM Pulse drain current tested ① TC =25°C 100 -96 A TA=25°C 11 -9 A IDSM Continuous drain current @VGS=±10V TA=70°C 9 -7 A 15 33 mJ EAS Avalanche energy, single pulsed ② PD Maximum power dissipation TC =25°C 14 20 W PDSM Maximum power dissipation ③ TA=25°C 2.8 2.8 W TSTG , TJ Storage and junction temperature range -55 to 150 -55 to 150 °C Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient NOV 2021 Version1.0 1/10 Typical 9 Unit 6.2 45 www.ascendsemi.com °C/W °C/W 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET N-Channel Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.9 2.4 V Drain-Source On-State Resistance ④ VGS=10V, ID=8A -- 15 21 mΩ RDS(ON) VGS=4.5V, ID=6A -- 23 32 mΩ 350 455 550 pF -- 75 130 pF -- 55 110 pF -- 5.4 -- Ω -- 11.3 -- nC -- 3 -- nC -- 4.3 -- nC -- 7 -- ns V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=8A, VGS=10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time ID=8A, -- 10 -- ns t d(off) Turn Off Delay Time RG=3Ω, - 22 -- ns tf Turn Off Fall Time -- 7 -- ns ISD=8A,VGS=0V -- 0.9 1.2 V Tj=25℃,Isd=8A, -- 9.5 -- ns -- 11.8 -- nC VDD=15V, VGS=10V Source Drain Diode Characteristics VSD t rr Qrr Forward on voltage Reverse Recovery Time VGS=0V Reverse Recovery Charge NOV 2021 Version1.0 2/10 di/dt=500A/μs www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET P-Channel Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=-30V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-30V,VGS=0V -- -- -100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.3 -1.9 -2.4 V Drain-Source On-State Resistance ④ VGS=-10V, ID=-8A -- 24 34 mΩ RDS(ON) VGS=-4.5V, ID=-6A -- 40 57 mΩ 760 865 960 pF 60 140 200 pF 30 95 150 pF -- 12.3 -- Ω -- 19 -- nC -- 4.3 -- nC -- 6.5 -- nC -- 6 -- ns V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=-15V,VGS=0V, f=1MHz f=1MHz VDS=-15V,ID=-8A, VGS=-10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time ID=-8A, -- 5 -- ns t d(off) Turn Off Delay Time RG=3Ω, - 25 -- ns tf Turn Off Fall Time -- 7 -- ns ISD=-8A,VGS=0V -- -0.9 -1.2 V Tj=25℃,Isd=-8A, -- 7 -- ns -- 6.3 -- nC VDD=-15V, VGS=-10V Source Drain Diode Characteristics VSD t rr Qrr Forward on voltage Reverse Recovery Time VGS=0V Reverse Recovery Charge NOV 2021 Version1.0 3/10 di/dt=-500A/μs www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) N-Channel Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics VGS, Gate -Source Voltage (V) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage NOV 2021 Version1.0 4/10 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) N-Channel Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance) ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig 9 .Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms NOV 2021 Version1.0 5/10 Fig11. Switching Time Test Circuit and waveforms www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET -ID, -Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) P-Channel Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. -VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance -ID, -Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) -VGS, -Gate -Source Voltage (V) Fig4. Normalized On-Resistance Vs. Tj -ID,- Drain Current (A) -ISD, -Reverse Drain Current (A) Fig3. Typical Transfer Characteristics -VSD, -Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage NOV 2021 Version1.0 6/10 -VDS, -Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET C, Capacitance (pF) -VGS, -Gate-Source Voltage (V) P-Channel Typical Characteristics -VDS , -Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Waveforms NOV 2021 Version1.0 7/10 Fig11. Switching Time Test Circuit and waveforms www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM30C25E-R 30C25 DFN3.3*3.3-8 Tape&Reel 5000/Reel MARKING PACKAGE 30C25 DFN3.3*3.3-8 NOV 2021 Version1.0 8/10 www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET Dimensions(DFN3.3×3.3-8) NOV 2021 Version1.0 9/10 www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 10/10 www.ascendsemi.com 0755-86970486
ASDM30C25E-R
物料型号:ASDM30C25E

器件简介:30V N&P-Channel MOSFET,由ASDsemi安森德生产,具有N+P通道增强型模式,低导通电阻,高效率,无铅引脚镀层,符合RoHS标准。

引脚分配:N-Channel的引脚为D1, G1, S1;P-Channel的引脚为D2, GZ, S2。封装类型为DFN3.33.3-8。

参数特性:包括但不限于漏源击穿电压(V)、栅源电压(V)、二极管连续正向电流(A)、连续漏源电流(A)、脉冲漏源电流(A)、雪崩能量(mJ)、最大功率耗散(W)、存储和结温范围(°C)等。

功能详解:文档提供了N-Channel和P-Channel的电气特性,包括静态电气特性、动态电气特性、开关特性、源漏二极管特性等。

应用信息:适用于高电池密度的沟槽N+P双通道MOSFET,同步降压转换器应用,具有出色的RDSON和栅电荷特性。

封装信息:DFN3.33.3-8封装,提供了订购型号、标记、包装、数量等信息,以及推荐的焊盘图案和尺寸。
ASDM30C25E-R 价格&库存

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ASDM30C25E-R
  •  国内价格
  • 1+0.82500
  • 100+0.77000
  • 300+0.71500
  • 500+0.66000
  • 2000+0.63250
  • 5000+0.61600

库存:0