ASDM30N40AE-R

ASDM30N40AE 30V N-Channel MOSFET Features • Provide Excellent RDS(ON) Product Summary • Advanced Trench Technology 30 V R DS(on),Typ@ VGS=10 V 6.0 mΩ ID 40 A • Low Gate Charge V • Lead free product is acquired Application DS • Load Switch • PWM Application • Power management PDFN3.3x3.3-8 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 40 A TC = 100℃ 20 A 160 A 39 mJ 12 W 10.4 ℃/W -55 to +150 ℃ ID IDM Continuous Drain Current Pulsed Drain Current note1 note2 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC Thermal Resistance, Junction to Case TJ, TSTG TC = 25℃ Operating and Storage Temperature Range DEC 2021 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM30N40AE 30V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=25A - 6 8 note3 VGS=4.5V, ID=15A - 9.5 14 - 1116 - pF - 187 - pF - 152 - pF - 13.3 - nC - 3.1 - nC - 5 - nC - 15 - ns - 19 - ns - 35 - ns - 21 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=15V, VGS=0V, f=1.0MHz VDS=15V, ID=15A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=15A, RGEN=3Ω, VGS=10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 160 A VSD Drain to Source Diode Forward Voltage - - 1.2 V trr Body Diode Reverse Recovery Time - 14 - ns Qrr Body Diode Reverse Recovery Charge - 4.1 - nC VGS=0V, IS=30A IF=30A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VGS=10V, RG=25Ω, L=0.5mH, IAS=12.6A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% DEC 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM30N40AE 30V N-Channel MOSFET Typical Performance Characteristics ID (A) 100 10V 80 100 8V ID (A) 80 4.5V 3.5V 60 60 40 40 3V 125℃ 20 25℃ 20 VGS=2.5V VDS(V) 0 0 1.0 2.0 3.0 4.0 5.0 0 1 2 3 4 5 6 Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics RDS(ON) (mΩ) 12 V GS(V) 0 1000 IS(A) 12 100 V GS=4.5V 10 8 150℃ 10 V GS=10V 25℃ 6 4 ID(A) 5 10 15 20 25 30 35 Figure 3:On-resistance vs. Drain Current 10 1 0.2 0.6 V SD(V) 1.0 1.2 1.4 1.6 1.8 C(pF) VDS=15V ID=15A 10000 Ciss 6 1000 Coss 4 100 Crss 2 0 0.8 Figure 4: Body Diode Characteristics VGS (V) 8 0.4 Qg(nC) 0 3 6 9 12 Figure 5: Gate Charge Characteristics DEC 2021 Version1.0 3/7 15 10 0 VDS(V) 5 10 15 20 25 30 Figure 6: Capacitance Characteristics www.ascendsemi.com 0755-86970486 ASDM30N40AE 30V N-Channel MOSFET VBR(DSS) RDS(on) 2.5 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0.8 -100 -50 Tj (℃) 50 0 100 150 200 Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 103 ID(A) 0.5 -100 -50 0 50 100 150 200 Figure 8: Normalized on Resistance vs. Junction Temperature 40 Limited by R DS(on) Tj (℃) ID(A) 32 10μs 102 100μs 24 1ms 1 10 16 10ms 100 100ms TC=25℃ Single pulse 8 DC VDS (V) 10-1 0.1 1 10 100 0 0 25 50 TC (℃) 75 100 125 150 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area ZthJ-C(℃/W) 102 101 100 PDM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC+TC TP(s) 10-1 10-2 -6 10 10-5 10-4 10-3 10-2 10-1 100 101 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case DEC 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM30N40AE 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM30N40AE-R 30N40A PDFN3.3x3.3-8 Packing Quantity Tape&Reel 5000/Reel MARKING PACKAGE PDFN3.3x3.3-8 DEC 2021 Version1.0 Package 30N40A 5/7 www.ascendsemi.com 0755-86970486 ASDM30N40AE 30V N-Channel MOSFET PDFN3.3x3.3-8 PACKAGE INFORMATION Symbol Dimensions In Millimeters MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 b 0.350 0.240 0.014 0.009 c 0.250 0.100 0.010 0.004 D 3.450 3.050 0.136 0.120 D1 3.200 2.900 0.126 0.114 D2 1.850 1.350 0.073 0.053 E 3.400 3.000 0.134 0.118 E1 3.250 2.900 0.128 0.114 E2 2.600 2.350 0.102 0.093 e DEC 2021 Version1.0 Dimensions In Inches 0.65BSC 0.026BSC H 0.500 0.300 0.020 0.012 L 0.500 0.300 0.020 0.012 L1 0.200 0.070 0.008 0.003 θ 12° 0° 12° 0° 6/7 www.ascendsemi.com 0755-86970486 ASDM30N40AE 30V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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