ASDM3010S
30V Dual N-Channel MOSFET
Features
●
Dual N-Channel,5V Logic Level Control
●
Enhancement mode
●
Fast Switching
●
High Effective
Product Summary
$SSOLFDWLRQV
●
●
Power Management in Inverter System
Synchronous Rectification
VDS
30
V
RDS(on),max.@VGS=10V
20
mΩ
ID
9
A
top view
ASCEND
SOP-8
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
V(BR)DSS
Parameter
Unit
30
V
TA =25°C
9
A
TA =25°C
9
A
TA =70°C
5.0
A
TA =25°C
36
A
9
mJ
Drain-Source breakdown voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested ①
EAS
Avalanche energy, single pulsed ②
PD
Maximum power dissipation
VGS
Gate-Source voltage
TA =25°C
2.5
±20
MSL
TSTG
Rating
W
V
Level 3
Storage temperature range
-55 to 150
°C
Typical
Unit
Thermal Characteristics
Symbol
Parameter
RθJL
Thermal Resistance-Junction to Lead
40
°C/W
Rθ JA
Thermal Resistance-Junction to Ambient
50
°C/W
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ASDM3010S
30V Dual N-Channel MOSFET
15.5
21.5
1.5
344
48
38
5.6
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
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ASDM3010S
30V Dual N-Channel MOSFET
Typical Performance Characteristics
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ASDM3010S
30V Dual N-Channel MOSFET
Test Circuit
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ASDM3010S
30V Dual N-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
Package
Packing
Quantity
ASDM3010S-R
3010
SOP8
Tape&Reel
4000/Reel
PACKAGE
MARKING
3010
SOP8
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ASDM3010S
30V Dual N-Channel MOSFET
SOP-8 PACKAGE IN FORMATION
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ASDM3010S
30V Dual N-Channel MOSFET
IMPORTANT NOTICE
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DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements,
corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor
Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither
does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any
Customer or user of this document or products described herein in such applications shall assume .
all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen
Ascend Semiconductor Incorporated website, harmless against all damages.
ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased
through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any
unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its
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