ASDM20N60AKQ-R

ASDM20N60AKQ 20V N-Channel MOSFET General Description ● ● Trench Power LV MOSFET technology Excellent package for heat dissipation ● High density cell design for low RDS(ON) Product Summary Applications ● ● ● ● BVDSS 20 V RDS(on),Typ.@VGS=4.5V 4.5 mΩ ID 60 A High current load applications Load switching Hard switched and high frequency circuits Uninterruptible power supply Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ±10 V 60 TC=25℃ Drain Current Unit ID Pulsed Drain Current A IDM TC=25℃ Total Power Dissipation A 42 TC=100℃ 210 A 35 W 18 W PD TC=100℃ Single Pulse Avalanche Energy B EAS 195 mJ Thermal Resistance Junction-to-Case C RθJC 4.3 ℃/ W TJ ,TSTG -55～+175 ℃ Junction and Storage Temperature Range NOV 2018 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM20N60AKQ 20V N-Channel MOSFET Electrical Characteristics (T = J 25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA IGSS VGS= ±10V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=250μA 0.62 1.0 V VGS= 4.5V, ID=20A 4.5 6.0 VGS= 2.5V, ID=15A 5.5 8.8 VGS= 1.8V, ID=10A 8.0 14 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD Maximum Body-Diode Continuous Current 0.4 V IS=20A,VGS=0V IS mΩ 1.2 V 60 A Dynamic Parameters Input Capacitance Ciss 2450 Output Capacitance Coss Reverse Transfer Capacitance Crss 205 Total Gate Charge Qg 65 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Charge Qrr VDS=10V,VGS=0V,f=1MHZ 430 pF Switching Parameters VGS=4.5V,VDS=10V,ID=15A 15 nC 13 39 IF=15A, di/dt=100A/us Reverse Recovery Time trr 35 Turn-on Delay Time tD(on) 12 Turn-on Rise Time tr 26 ns VGS=4.5V,VDD=10V, ID=10A,RL=1Ω RGEN=3Ω Turn-off Delay Time Turn-off fall Time tD(off) 35 tf 10 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. NOV 2018 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM20N60AKQ 20V N-Channel MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. Drain-Source on Resistance NOV 2018 Version1.0 3/7 Figure2. Transfer Characteristics Figure4. Gate Charge Figure6. Drain-Source on Resistance www.ascendsemi.com 0755-86970486 ASDM20N60AKQ 20V N-Channel MOSFET Figure7. Safe Operation Area NOV 2018 Version1.0 4/7 Figure8. Switching wave www.ascendsemi.com 0755-86970486 ASDM20N60AKQ 20V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM20N60AKQ-R 20N60A TO-252 Tape&Reel 2500/Reel MARKING PACKAGE TO-252 NOV 2018 Version1.0 Quantity 20N60A 5/7 www.ascendsemi.com 0755-86970486 ASDM20N60AKQ 20V N-Channel MOSFET TO-252 NOV 2018 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM20N60AKQ 20V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 7/7 www.ascendsemi.com 0755-86970486