ASDM30N55E-R

ASDM30N55E 30V N-Channel MOSFET Feature •100% EAS Guaranteed •Green Device Available •Super Low Gate Charge •Excellent CdV/dt effect decline •Advanced high cell density Trench technology Product Summary VDS 30 V RDS(on),typ VGS=10V 4.8 mΩ ID 55 A Application • Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage Unit 30 V 55 A Tc =25°C 55 A Tc =100°C 35 A 220 A 105 mJ 40 W ±20 V TC=25°C TA =25°C Tc =25°C MSL TSTG , TJ Rating Level 3 Storage and junction temperature range -55 to 150 °C Typical Unit 40 °C/W 70 °C/W Thermal Characteristics Symbol RθJL R JA Parameter Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient NOV 2019 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM30N55E 30V N-Channel MOSFET Typical Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.4 2.5 V RDS(ON) Drain-Source On-State Resistance ③ VGS=10V, ID=30A -- 4.8 6 mΩ RDS(ON) Drain-Source On-State Resistance ③ VGS=4.5V, ID=20A -- 6.9 12 mΩ V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge f=1MHz f=1MHz Switching t d(on) VDS=15V,VGS=0V, VDS=15V,ID=15A, VGS=10V 1280 pF 169 pF 126 pF -- 1.6 -- Ω -- 31.6 -- nC -- 6.07 -- nC -- 13.8 -- nC -- 11.2 -- nS Characteristics Turn-on Delay Time VDD=15V, tr Turn-on Rise Time ID=20A, -- 49 -- nS t d(off) Turn-Off Delay Time RG=1.5Ω, -- 35 -- nS tf Turn-Off Fall Time -- 7.8 -- nS VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage ISD=2A,VGS=0V -- 0.8 1.0 V t rr Reverse Recovery Time Tj=25℃,Isd=10A, -- 20 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=500A/μs 11.5 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.1mH,RG = 25Ω, IAS = 42A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. NOV 2019 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM30N55E 30V N-Channel MOSFET Typical Characteristics 5.0 12 VGS=7V 8 4.5 VGS=5V RDSON (mΩ) ID Drain Current (A) ID=12A VGS=10V 10 VGS=4.5V 6 4.0 VGS=3V 4 3.5 2 0 3.0 0 0.25 0.5 VDS , Drain-to-Source Voltage (V) 0.75 2 Fig.1 Typical Output Characteristics 4 6 8 VGS (V) 10 Fig.2 On-Resistance vs. G-S Voltage 10 12 ID=12A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=175℃ TJ=25℃ 4 2 8 6 4 2 0 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 0 1.2 Fig.3 Forward Characteristics of Reverse 40 60 QG , Total Gate Charge (nC) 80 Fig.4 Gate-Charge Characteristics 1.5 2.0 Normalized On Resistance Normalized VGS(th) 20 1 1.5 1.0 0.5 0.5 0 -50 25 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ NOV 2019 Version1.0 3/7 175 -50 25 100 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.ascendsemi.com 0755-86970486 ASDM30N55E 30V N-Channel MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Transient Thermal Resistance r(t) , Normalized Effective Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) T1, Square Wave Pulse Duration(sec) Fig9. T1 ,Transient Thermal Response Curve Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms NOV 2019 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM30N55E 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM30N55E-R 30N55 DFN3.3*3.3-8 Packing Quantity Tape&Reel 5000/Reel MARKING PACKAGE DFN3.3*3.3-8 NOV 2019 Version1.0 Package 30N55 5/7 www.ascendsemi.com 0755-86970486 ASDM30N55E 30V N-Channel MOSFET Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ NOV 2019 Version1.0 Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° 6/7 Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° www.ascendsemi.com 0755-86970486 ASDM30N55E 30V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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