ASDM3401ZA-R

ASDM3401ZA -30V P-Channel MOSFET Features Product Summary ● High dense cell design for extremely low RDS(ON). ● Exceptional on-resistance and maximum DC current capability -30 V DS R DS(on),Max@ VGS=-10 V V 65 mΩ -4.2 ID A Application ● PWM applications ● Load switch ● Power management top view D G S SOT23 P-Channel Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 350 mW RθJA 357 ℃/W Thermal Resistance from Junction to Ambient (t