ASDM2305ZA-R

ASDM2305ZA -20V P-CHANNEL MOSFET Features Product Summary ● High power and current handing capability V ● Lead free product is acquired ● Surface mount package DS -20 V 45 mΩ 5.4 A R DS(on),TYP@ VGS=-4.5 V Application ID - ● Motor control and drive ● Battery management ● UPS (Uninterrupible Power Supplies) top view D G S P-Channel SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted ameter Drain-Source Voltage Gate-Source Voltage Limit - 20 ± 12 VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C = 25 °C = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID - 3.3 a, b - 21.6 A - 5.4 - 0.8 a, b IS 1.7 1.1 PD W 0.96a, b 0.62a, b - 50 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. V - 5.4 - 4.3 TA - 4.1a, b TA IDM Pulsed Drain Current Unit °C THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Steady State a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 175 °C/W. NOV 2018 Version2.0 1/9 www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 µA - 20 ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg gfs tr Rise Time td(off) Turn-Off DelayTime Fall Time Turn-On Delay Time - 0.45 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage V nA VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 55 °C - 10 45 50 VGS = - 2.5 V, ID = - 3.4 A 60 75 VGS = - 1.8 V, ID = - 2.0 A 84 88 VDS = - 5 V, ID = - 4.1 A 8 VDS = - 4 V, VGS = 0 V, f = 1 MHz 163 VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A 107 7.8 15 4.5 9 416 VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A pF 1.2 1.4 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 7 14 13 20 35 53 48 td(on) 5 10 11 17 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω 22 33 16 24 TC = 25 °C -5.4 ISM VSD trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb nC 1.6 f = 1 MHz 20 Body Diode Reverse Recovery Time mΩ S 10 IS µA A -5 tf Fall Time - 0.8 ± 100 tf td(off) Turn-Off DelayTime mV/°C 2.1 VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.1 A Unit V 32 tr Rise Time Max. - 55 td(on) Turn-On Delay Time Typ. - 10 IF = - 3.3 A IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C Ω ns A - 0.8 - 1.2 V 33 50 ns 14 21 nC 14 19 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOV 2018 Version2.0 2/9 www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 VGS = 4.5 V thru 2 V 9 9 6 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 1.5 V 3 6 3 TC = 125 °C TC = 25 °C VGS = 0.5 V VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = - 55 °C 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.10 900 0.08 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.8 V VGS = 2.5 V 0.06 600 Ciss Coss 300 0.04 VGS = 4.5 V Crss 0 0.02 0 2 4 8 0 10 2 6 8 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.5 4.5 2.7 VDS = 6.4 V 1.8 VDS = 2.5 V, ID = 3.4 A 1.3 (Normalized) VDS = 4 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 4.1 A 3.6 1.1 VDS = 4.5 V, ID = 4.1 A 0.9 0.9 0.0 0.0 1.5 3.0 4.5 6.0 Qg - Total Gate Charge (nC) Gate Charge NOV 2018 Version2.0 3/9 7.5 9.0 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.08 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.1 A 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.7 0.6 ID = 250 µA Power (W) VGS(th) (V) 20 0.5 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient NOV 2018 Version2.0 4/9 www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6.0 I D - Drain Current (A) 4.5 3.0 1.5 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2.0 1.00 1.5 0.75 Power (W) Power (W) Current Derating* 1.0 0.5 0.50 0.25 0.0 0.00 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The po er dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. NOV 2018 Version2.0 5/9 www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot NOV 2018 Version2.0 6/9 www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. ASDM2305ZA-R Package 2305 SOT-23 Packing Quantity Tape&Reel 3000/Reel MARKING PACKAGE 2305 SOT-23 NOV 2018 Version2.0 Marking 7/9 Lot Number www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET Symbol Dimensions in Millimeters Min Max Dimensions in Inches Min Max A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 A2 0.90 1.05 0.035 0.041 b 0.30 0.55 0.012 0.022 C 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 1.20 1.40 0.047 0.055 0.95 TYP e 0.037 TYP e1 1.80 2.00 0.071 0.079 H 2.25 2.55 0.089 0.100 L 0.30 0.50 0.012 0.020 θ 0∘ 8∘ 0∘ 8∘ NOV 2018 Version2.0 8/9 www.ascendsemi.com 0755-86970486 ASDM2305ZA -20V P-CHANNEL MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version2.0 9/9 www.ascendsemi.com 0755-86970486