ASDM30P100Q-R

ASDM30P100Q 30V P-Channel MOSFET Features Product Summary • Advanced Trench Process Technology • Low RDS(ON) to Minimize Conduction Losses V DS • Low Qg and Capacitance to Minimize Driver Losses • Superior thermal resistance • Excellent Gate Charge x RDS(ON) Product (FOM) • Fully Characterized Capacitance and Avalanche SOA • Pb-free lead plating; RoHS Compliant R I DS(on),Typ @ VGS=10 V D -30 V 2.7 mΩ -100 A • Halogen-free According to IEC61249-2-21 PDFN5×6-8 Absolute Maximum Ratings (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V -100 A TC = 100°C -59 A TC = 25°C ID ID TC = 25°C Drain Current-Continuous IDM Drain Current-Pulsed -350 A IAS Non-repetitive Avalanche Current Note C, E -90 A EAS Single Pulse Drain-to-Source Avalanche Energy Note C, D 405 mJ Ptot Maximum Power Dissipation TC = 25°C 54.5 W Operating and Storage Temperature Range IEC climatic category; DIN IEC 68-1: 55/150/56 -55 to +150 °C TJ, TSTG Note A Thermal Resistance Ratings Symbol Min. Typ. Max. Unit RθJA Junction-to-Ambient Note B Parameter Steady State Conditions - - 35 °C/W RθJS Junction-to-Soldering Point Steady State - - 2.3 °C/W Notes: A. Repetitive rating, pulse width limited by junction temperature TJmax = +150°C. Ratings are based on low frequency and duty cycles to keep initial TJ = +25°C. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJS is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air. C. Limited by TJmax, starting TJ = +25°C, L = 0.1mH, Rg = 50Ω, VGS = -10V. D. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. E. Guaranteed by design. Not subject to product testing. F. Repetitive Avalanche Current Starting TJ = +25°C, L= 0.1mH, IAS = -53A, VGS = -10V, VDD = -30V NOV 2021 Version1.0 1/8 www.ascendsemi.com 0755-86970486 ASDM30P100Q 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC CHARACTERISTICS Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Conditions Min. Typ. Max. Unit -30 - - V VDS = -24V, VGS = 0V - - -1 μA VDS = -24V, VGS = 0V, TJ = 125°C - - -100 μA VGS = ±20V, VDS = 0V - - ±100 nA VGS = 0V, IDS = -250μA STATIC CHARACTERISTICS Symbol Parameter Min. Typ. Max. Unit VDS = VGS, IDS = -250μA -1 -1.6 -2.5 V Drain-Source On-State Resistance Note A VGS = -10V, IDS = -18A - 2.7 3.1 mΩ Drain-Source On-State Resistance Note A VGS = -4.5V, IDS = -10A - 4 5 mΩ VGS = 0V, VDS = 0V, f = 1MHz - 1.7 - Ω VDS = -10V, IDS = -5A - 27 - S VGS(TH) Gate Threshold Voltage RDS(ON) RDS(ON) Rg Gate Resistance gfs Forward Transconductance Conditions Note E DYNAMIC CHARACTERISTICS Note E Symbol Min. Typ. Max. Unit Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1MHz - 8000 - pF Coss Output Capacitance VDS = -15V, VGS = 0V, f = 1MHz - 802 - pF Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz - 630 - pF Td(on) Turn-On Delay Time VDS = -15V, VGS = -10V, IDS = -18A, RGEN = 6Ω - 69 - ns Rise Time VDS = -15V, VGS = -10V, IDS = -18A, RGEN = 6Ω - 56 - ns Turn-Off Delay Time VDS = -15V, VGS = -10V, IDS = -18A, RGEN = 6Ω - 68 - ns Fall Time VDS = -15V, VGS = -10V, IDS = -18A, RGEN = 6Ω - 16 - ns Min. Typ. Max. Unit tr Td(off) tf Parameter Conditions GATE CHARGE CHARACTERISTICS Note E Symbol Parameter Conditions Qgs Gate to Source Gate Charge VDD = -15V, ID = -18A, VGS = 0 to -10V - 25.1 - nC Qg(th) Gate charge at threshold VDD = -15V, ID = -18A, VGS = 0 to -10V - 11.8 - nC Qgd Gate to Drain Charge VDD = -15V, ID = -18A, VGS = 0 to -10V - 27.8 - nC QSW Switching charge VDD = -15V, ID = -18A, VGS = 0 to -10V - 41 - nC Qg Gate charge total VDD = -15V, ID = -18A, VGS = 0 to -10V - 147.2 - nC Qg Gate charge total VDD = -15V, ID = -18A, VGS = 0 to -4.5V - 71.2 - nC Vpalteau Gate plateau voltage VDD = -15V, ID = -18A, VGS = 0 to -10V - 3.1 - V Qg(sync) Gate charge total, sync. FET (Qg - Qgd) VDS = -0.1V, VGS = 0 to -10V - 119.4 - nC Min. Typ. Max. Unit REVERSE DIODE Symbol Parameter Conditions IS Diode continuous forward current TC = 25°C - - -100 A ISM Diode pulse current TC = 25°C - - -350 A VSD Diode Forward Voltage VGS = 0V, IF = -18A - - -1.2 V trr Body Diode Reverse Recovery Time Note E VDD = -15V, IF = -18A, di/dt = 100A/μs - 25 - ns Qrr Body Diode Reverse Recovery Charge Note E VDD = -15V, IF = -18A, di/dt = 100A/μs - 20 - nC NOV 2021 Version1.0 Note A 2/8 www.ascendsemi.com 0755-86970486 ASDM30P100Q 30V P-Channel MOSFET Typical Performance Characteristics 400 140 VDS= -5V TOP VGS= -10V VGS= -7V VGS= -6V VGS= -5.5V VGS= -5V VGS= -4.5V VGS= -4V VGS= -3.5V VGS= -3V VGS= -2.5V 350 120 ID, Drain Current (A) ID, Drain Current (A) 300 100 80 Tj=25℃ Tj=125℃ 60 250 200 150 40 100 20 50 0 0 0 2 3 VGS, Gate-Source Voltage (V) 4 0 5 On-Resistance vs. Drain Current and Gate 7 4 On-Resistance vs. Gate-Source Voltage ID= -18A 6 10 5 VGS= -4.5V 4 3 VGS= -10V 2 1 0 0 3 6 9 12 ID, Drain Current (A) 15 6 Tj=125℃ 4 Tj=25℃ 2 2 3 4 VGS(th), Gate-Source Threshold Voltage (V) 1.4 VGS= -10V, ID= -18A VGS= -4.5V, ID= -10A 1.2 1.1 1 0.9 0.8 5 6 7 8 VGS, Gate-to-Source Voltage (V) 9 10 150 175 Gate Threshold Voltage 2 1.5 1.3 8 0 18 On-Resistance vs. Junction Temperature 1.6 Normalized Drain-to-Source On Resistance 1 2 3 VDS, Drain-to-Source Voltage (V) 12 Drain-to-Source on Resistance (mΩ) RDS(on) , Drain-to-Source On Resistance (mΩ) 1 1.8 1.6 ID= -2.5mA 1.4 1.2 ID= -250μA 1 0.8 0 25 50 75 100 125 TJ, Junction Temperature (℃) NOV 2021 Version1.0 3/8 150 175 0 25 50 75 100 125 Tj, Junction Temperature (℃) www.ascendsemi.com 0755-86970486 ASDM30P100Q 30V P-Channel MOSFET ID= -250μA 1.12 100 1.1 IS, Reverse Drain Current (A) VDSS, Normalized Drain-Source Breakdown Voltage 1.14 1.08 1.06 1.04 1.02 Tj=125℃ Tj=25℃ 10 1 0.98 0 25 50 75 100 125 TJ, Junction Temperature (℃) 150 1 175 0 Zero Gate Voltage Drain Current vs. Junction Temperature 100 0.2 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) 1.4 Capacitance vs. Drain to Source Voltage 100000 f=1MHz 10 Cj, Junction Capacitance (pF) IDSS, Drain-Source Leakage Current (uA) VDS= -30V 1 0.1 Ciss 10000 Coss 1000 Crss 0.01 0 25 50 75 100 125 TJ, Junction Temperature (℃) 150 100 175 0 Maximum Forward Biased Safe Operating Area 1000 VGS, Gate-to-Source Voltage (V) 1mS 10 10 15 20 VDS, Drain-Source Voltage (V) 25 30 Gate-Charge Characteristics VDS= -15V ID= -18A 8 100uS 100 5 10 9 ID,Drain Current (A) 1.6 10mS DC 1 TjMAX=150℃ Single Pulse 7 6 5 4 3 2 1 Tc=25℃ 0.1 0 0.1 1 10 VDS, Drain to Source Voltage (V) NOV 2021 Version1.0 4/8 100 0 20 40 60 80 100 Qg, Total Gate Charge (nC) www.ascendsemi.com 120 140 0755-86970486 ASDM30P100Q 30V P-Channel MOSFET Transient Thermal Resistance ZθJC, Normalized Transient Thermal Resistance 10 1 0.1 0.01 0.001 Single Pulse 0.0001 0.000001 10 ZθJA, Normalized Transient Thermal Resistance In descending oreder: D= Ton/T TJ=TC+PD*ZθJC*RθJC 0.00001 0.0001 0.001 0.01 Pulse Width (S) 0.1 1 10 100 in descending oreder: D= Ton/T TJ=TA+PD*ZθJA*RθJA RθJA=35℃/W 1 0.1 0.01 0.001 0.0001 Single Pulse 0.00001 0.000001 0.000001 0.00001 NOV 2021 Version1.0 0.0001 0.001 5/8 0.01 0.1 Pulse Width (S) 1 10 100 www.ascendsemi.com 1000 0755-86970486 10000 ASDM30P100Q 30V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM30P100Q-R 30P100 PACKAGE Packing PDFN5*6-8 Tape&Reel Quantity 4000/Reel MARKING 30P100 PDFN5*6-8 NOV 2021 Version1.0 Package 6/8 www.ascendsemi.com 0755-86970486 ASDM30P100Q 30V P-Channel MOSFET PDFN5*6-8 NOV 2021 Version1.0 7/8 www.ascendsemi.com 0755-86970486 ASDM30P100Q 30V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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