MDD2305

MDD2305 -20V P-Channel Enhancement Mode MOSFET SOT-23 3 V(BR)DSS RDS(on)Typ 37mΩ@-4.5V -20V 40mΩ@-3.3V 1. Gate ID Max 2. Source -4.2A 3. Drain 2 1 Features APPLICATION Trench FET Power MOSFET z z Marking Load Switch for Portable Devices DC/DC Converter Equivalent Circuit D D G G XXX S5 XXX:Date Code S S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID -4.2 A Pulsed Drain Current (Note 1) IDM -16.8 A Power Dissipation(Note 2) PD 1.25 W RθJA 100 ℃/W TJ,Tstg -50 ~150 ℃ Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/5 V 1.0 MDD2305 -20V P-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA -20 -- -- V IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V -- -- -1 uA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 -0.6 -1 V Drain-Source On-State Resistance(Note 3) VGS=-4.5V, ID=-3A -- RDS(ON) 37 48 mΩ VGS=-2.5V, ID=-2A -- 45 60 mΩ Min Typ Max Unit -- 760 -- pF -- 94 -- pF -- 76 -- pF Dynamic Electrical Characteristics Symbol Parameter Condition Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=-10V -- 7.8 -- nC Qgs Gate Source Charge VGS=-4.5V -- 0.9 -- nC Qgd Gate Drain Charge -- 1.8 -- nC Min Typ Max Unit VDS=-10V -- 5.5 -- ns VGS =-4.5V -- 3.9 -- ns VDS=-10V VGS=0V f=1MHz ID=-3A Switching Characteristics Symbol Parameter Condition td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time RG=3.3Ω -- 11.3 -- ns tf Turn Off Fall Time RL=1.2Ω -- 36 -- ns Min Typ Max Unit ID=-2A Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) TA=25℃ -- -- -2 A VSD Drain-Source Diode Forward Voltage IS=-4A, VGS=0V -- -0.87 -1.2 V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/5 V 1.0 MDD2305 -20V P-Channel Enhancement Mode MOSFET -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics -VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Rdson, On -Resistance (mΩ)) -ID, Drain-Source Current (A) Fig2. Normalized Threshold Voltage Vs. Temperature Fig3. Typical Transfer Characteristics Fig4. On-Resistance vs. Drain Current and Gate Voltage -ID - Drain Current (A) -ID , Drain Current (A) -ISD, Reverse Drain Current (A) -VGS, Gate -Source Voltage (V) -VSD, Source-Drain Voltage (V) -VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Fig6. Maximum Safe Operating Area 3/5 V 1.0 MDD2305 -20V P-Channel Enhancement Mode MOSFET C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics -VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms 4/5 V 1.0 MDD2305 -20V P-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 5/5 V 1.0