ESD5B5VL-2/TR

ESD5B5VL ESD5B5VL 1-Line, Bi-directional, Transient Voltage Suppressors www.omnivision-group.com Descriptions The ESD5B5VL is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components that may be subjected to ESD (Electrostatic Discharge) and Lightning. It is particularly SOD-523 well-suited for cellular phones, portable device, digital cameras, power supplies and many other portable applications because of its small package and low weight. The ESD5B5VL may be used to provide ESD protection up to ±8kV (contact discharge) according to IEC61000-4-2, and Pin1 Pin2 withstand peak pulse current up to 3 A (8/20μs) according to IEC61000-4-5. Circuit diagram The ESD5B5VL is available in SOD-523 package. Standard products are Pb-free and Halogen-free. . * B Pin1 Features  Stand-off voltage: ±5V Max  Transient protection for each line according to B = Device code IEC61000-4-2 (ESD): ±8kV (contact discharge) * = Date code ( A~Z) IEC61000-4-5 (surge): 3A (8/20μs)  Capacitance: CJ = 5.0pF typ.  Solid-state silicon technology Pin2 Marking (Top View) Order information Applications  Cell phone handsets and accessories  Personal Digital Assistants (PDAs)  Notebooks, Desktops, and Servers  Portable Instrumentation  Digital Cameras  MP3/MP4/PMP Players Will Semiconductor Ltd. 1 Device Package Shipping ESD5B5VL-2/TR SOD-523 3000/Tape&Reel Revision 1.5, 2022/08/23 ESD5B5VL Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 33 W Peak pulse current (tp = 8/20μs) IPP 3 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge ±15 kV ±8 TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA=25 oC, unless otherwise noted) VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP Will Semiconductor Ltd. IHOLD Reverse holding current 2 Revision 1.5, 2022/08/23 ESD5B5VL Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Condition Min. Typ. VRWM = 5V Unit ±5 V 1 μA 8.2 V Reverse breakdown voltage VBR IT=1mA Clamping voltage 1) VCL IPP = 16A, tp = 100ns 13 V Clamping voltage 2) VCL VESD = 8kV 13 V Clamping voltage 3) VC Dynamic resistance 1) RDYN Junction capacitance CJ 6.2 Max. Ipp=1A tp=8/20μs 8.5 V Ipp=3A tp=8/20μs 11 V Ω 0.4 VR = 0V, f = 1MHz 5.0 10 pF VR =5V, f = 1MHz 3.5 5 pF Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 70ns to 90ns. RDYN is calculated from 4A to 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. 100 90 Time to half-value: T2= 20s 50 T2 10 0 0 100 90 Front time: T1= 1.25 T = 8s Current (%) Peak pulse current (%) 16A. 10 T T1 20 8/20μs waveform per IEC61000-4-5 Will Semiconductor Ltd. 60ns 30ns Time (s) tr = 0.7~1ns t Time (ns) Contact discharge current waveform per IEC61000-4-2 3 Revision 1.5, 2022/08/23 ESD5B5VL Typical characteristics (TA=25oC, unless otherwise noted) CJ - Junction capacitance (pF) VC - Clamping voltage (V) 11.0 Pulse waveform: tp=8/20μs 10.5 10.0 pin1 to pin2 9.5 9.0 pin2 to pin1 8.5 8.0 7.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 6.00 5.75 5.50 5.25 5.00 4.75 4.50 4.25 4.00 3.75 3.50 3.25 3.00 -5 Ipp - Peak pulse current (A) f = 1MHz VAC = 50mV -4 -3 -2 -1 0 1 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 24 Z0 = 50 TLP current (A) 16 8 tr = 2ns tp = 100ns 0 -8 -16 -24 -15 -10 -5 0 5 10 15 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.5, 2022/08/23 ESD5B5VL Package outline dimensions SOD-523 A1 E b D E2 E1 A TOP VIEW SIDE VIEW 0.4 c 2 1.5 1 0.5 SIDE VIEW Symbol θ RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.51 - 0.77 A1 0.50 0.60 0.70 b 0.25 - 0.40 c 0.08 - 0.15 D 0.75 0.80 0.85 E 1.10 1.20 1.30 E1 1.50 1.60 1.70 E2 0.20 Ref. θ 7︒C Ref. Will Semiconductor Ltd. 5 Revision 1.5, 2022/08/23 ESD5B5VL Tape and reel information Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 6 Q4 Revision 1.5, 2022/08/23